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AH22S-G

Description
50 MHz - 1000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
CategoryTopical application    Wireless rf/communication   
File Size158KB,4 Pages
ManufacturerTriQuint Semiconductor Inc. (Qorvo)
Websitehttp://www.triquint.com
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AH22S-G Overview

50 MHz - 1000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER

AH22S-G Parametric

Parameter NameAttribute value
Maximum operating temperature85 Cel
Minimum operating temperature-40 Cel
Maximum input power13 dBm
Maximum operating frequency1000 MHz
Minimum operating frequency50 MHz
Processing package descriptionGreen, plastic, MS-012, SOIC-8
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
structureCOMPONENT
terminal coatingNickel Palladium
Impedance characteristics50 ohm
Microwave RF TypeWIDE band MEDIUM POWER

AH22S-G Related Products

AH22S-G AH22S_15 AH22S-PCB
Description 50 MHz - 1000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 50 MHz - 1000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 50 MHz - 1000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
Maximum operating temperature 85 Cel 85 Cel 85 Cel
Minimum operating temperature -40 Cel -40 Cel -40 Cel
Maximum input power 13 dBm 13 dBm 13 dBm
Maximum operating frequency 1000 MHz 1000 MHz 1000 MHz
Minimum operating frequency 50 MHz 50 MHz 50 MHz
Processing package description Green, plastic, MS-012, SOIC-8 Green, plastic, MS-012, SOIC-8 Green, plastic, MS-012, SOIC-8
Lead-free Yes Yes Yes
EU RoHS regulations Yes Yes Yes
state ACTIVE ACTIVE ACTIVE
structure COMPONENT COMPONENT COMPONENT
terminal coating Nickel Palladium Nickel Palladium Nickel Palladium
Impedance characteristics 50 ohm 50 ohm 50 ohm
Microwave RF Type WIDE band MEDIUM POWER WIDE band MEDIUM POWER WIDE band MEDIUM POWER

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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