|
AH22S-G |
AH22S_15 |
AH22S-PCB |
Description |
50 MHz - 1000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
50 MHz - 1000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
50 MHz - 1000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
Maximum operating temperature |
85 Cel |
85 Cel |
85 Cel |
Minimum operating temperature |
-40 Cel |
-40 Cel |
-40 Cel |
Maximum input power |
13 dBm |
13 dBm |
13 dBm |
Maximum operating frequency |
1000 MHz |
1000 MHz |
1000 MHz |
Minimum operating frequency |
50 MHz |
50 MHz |
50 MHz |
Processing package description |
Green, plastic, MS-012, SOIC-8 |
Green, plastic, MS-012, SOIC-8 |
Green, plastic, MS-012, SOIC-8 |
Lead-free |
Yes |
Yes |
Yes |
EU RoHS regulations |
Yes |
Yes |
Yes |
state |
ACTIVE |
ACTIVE |
ACTIVE |
structure |
COMPONENT |
COMPONENT |
COMPONENT |
terminal coating |
Nickel Palladium |
Nickel Palladium |
Nickel Palladium |
Impedance characteristics |
50 ohm |
50 ohm |
50 ohm |
Microwave RF Type |
WIDE band MEDIUM POWER |
WIDE band MEDIUM POWER |
WIDE band MEDIUM POWER |