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LBC857BLT1G_15

Description
General Purpose Transistors
File Size150KB,7 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
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LBC857BLT1G_15 Overview

General Purpose Transistors

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
Moisture Sensitivity Level: 1
ESD Rating – Human Body Model: >4000 V
ESD Rating
– Machine Model: >400 V
We declare that the material of product compliance with
RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
MAXIMUM RATINGS
(TA = 25°C unless otherwise noted)
Rating
Collector-Emitter Voltage
LBC856
LBC857
LBC858, LBC859
LBC856
LBC857
LBC858, LBC859
Symbol
VCEO
Value
–65
–45
–30
–80
–50
–30
–5.0
–100
Unit
V
3
COLLECT OR
LBC857CLT1G
Series
S-LBC857CLT1G
Series
3
1
2
SOT–23
Collector-Base Voltage
VCBO
V
1
B ASE
Emitter–Base Voltage
Collector Current – Continuous
VEBO
IC
V
mAdc
2
EMIT T ER
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board,
(Note 1.) TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Total Device Dissipation Alumina
Substrate, (Note 2.) TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Junction and Storage Temperature
Symbol
PD
225
1.8
R
qJA
PD
300
2.4
R
qJA
TJ, Tstg
417
–55 to
+150
mW
mW/°C
°C/W
°C
556
mW
mW/°C
°C/W
2
1
xx= Device Marking
(See Table Below)
xx
Max
Unit
MARKING DIAGRAM
3
1. FR–5 = 1.0 x 0.75 x 0.062 in
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Rev.O 1/7
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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