IC 256K X 72 STANDARD SRAM, 2.1 ns, CBGA209, 14 X 22 MM, 1 MM PITCH, CERAMIC, BGA-209, Static RAM
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Toshiba Semiconductor |
| Parts packaging code | BGA |
| package instruction | BGA, BGA209,11X19,40 |
| Contacts | 209 |
| Reach Compliance Code | unknown |
| ECCN code | 3A991.B.2.A |
| Maximum access time | 2.1 ns |
| Maximum clock frequency (fCLK) | 250 MHz |
| I/O type | COMMON |
| JESD-30 code | R-CBGA-B209 |
| JESD-609 code | e0 |
| length | 22 mm |
| memory density | 18874368 bit |
| Memory IC Type | STANDARD SRAM |
| memory width | 72 |
| Number of functions | 1 |
| Number of terminals | 209 |
| word count | 262144 words |
| character code | 256000 |
| Operating mode | SYNCHRONOUS |
| Maximum operating temperature | 70 °C |
| Minimum operating temperature | |
| organize | 256KX72 |
| Output characteristics | 3-STATE |
| Package body material | CERAMIC, METAL-SEALED COFIRED |
| encapsulated code | BGA |
| Encapsulate equivalent code | BGA209,11X19,40 |
| Package shape | RECTANGULAR |
| Package form | GRID ARRAY |
| Parallel/Serial | PARALLEL |
| power supply | 1.8 V |
| Certification status | Not Qualified |
| Maximum seat height | 2.65 mm |
| Minimum standby current | 1.7 V |
| Maximum supply voltage (Vsup) | 1.95 V |
| Minimum supply voltage (Vsup) | 1.7 V |
| Nominal supply voltage (Vsup) | 1.8 V |
| surface mount | YES |
| technology | CMOS |
| Temperature level | COMMERCIAL |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | BALL |
| Terminal pitch | 1 mm |
| Terminal location | BOTTOM |
| width | 14 mm |
| TC55YD1873YB-250 | TC55YD1873YB-333 | |
|---|---|---|
| Description | IC 256K X 72 STANDARD SRAM, 2.1 ns, CBGA209, 14 X 22 MM, 1 MM PITCH, CERAMIC, BGA-209, Static RAM | IC 256K X 72 STANDARD SRAM, 1.6 ns, CBGA209, 14 X 22 MM, 1 MM PITCH, CERAMIC, BGA-209, Static RAM |
| Is it Rohs certified? | incompatible | incompatible |
| Parts packaging code | BGA | BGA |
| package instruction | BGA, BGA209,11X19,40 | BGA, BGA209,11X19,40 |
| Contacts | 209 | 209 |
| Reach Compliance Code | unknown | unknown |
| ECCN code | 3A991.B.2.A | 3A991.B.2.A |
| Maximum access time | 2.1 ns | 1.6 ns |
| Maximum clock frequency (fCLK) | 250 MHz | 333 MHz |
| I/O type | COMMON | COMMON |
| JESD-30 code | R-CBGA-B209 | R-CBGA-B209 |
| JESD-609 code | e0 | e0 |
| length | 22 mm | 22 mm |
| memory density | 18874368 bit | 18874368 bit |
| Memory IC Type | STANDARD SRAM | STANDARD SRAM |
| memory width | 72 | 72 |
| Number of functions | 1 | 1 |
| Number of terminals | 209 | 209 |
| word count | 262144 words | 262144 words |
| character code | 256000 | 256000 |
| Operating mode | SYNCHRONOUS | SYNCHRONOUS |
| Maximum operating temperature | 70 °C | 70 °C |
| organize | 256KX72 | 256KX72 |
| Output characteristics | 3-STATE | 3-STATE |
| Package body material | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| encapsulated code | BGA | BGA |
| Encapsulate equivalent code | BGA209,11X19,40 | BGA209,11X19,40 |
| Package shape | RECTANGULAR | RECTANGULAR |
| Package form | GRID ARRAY | GRID ARRAY |
| Parallel/Serial | PARALLEL | PARALLEL |
| power supply | 1.8 V | 1.8 V |
| Certification status | Not Qualified | Not Qualified |
| Maximum seat height | 2.65 mm | 2.65 mm |
| Minimum standby current | 1.7 V | 1.7 V |
| Maximum supply voltage (Vsup) | 1.95 V | 1.95 V |
| Minimum supply voltage (Vsup) | 1.7 V | 1.7 V |
| Nominal supply voltage (Vsup) | 1.8 V | 1.8 V |
| surface mount | YES | YES |
| technology | CMOS | CMOS |
| Temperature level | COMMERCIAL | COMMERCIAL |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | BALL | BALL |
| Terminal pitch | 1 mm | 1 mm |
| Terminal location | BOTTOM | BOTTOM |
| width | 14 mm | 14 mm |
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