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RFLA1018SR

Description
VARIABLE GAIN LOW NOISE HIGH LINEARITY AMPLIFIER
File Size2MB,12 Pages
ManufacturerRF Micro Devices (Qorvo)
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RFLA1018SR Overview

VARIABLE GAIN LOW NOISE HIGH LINEARITY AMPLIFIER

RFLA1018Vari-
able Gain Low
Noise High Lin-
earity Amplifier
RFLA1018
VARIABLE GAIN LOW NOISE HIGH LINEARITY
AMPLIFIER
Package Style: MCM 16-Pin, 8.0mm x 8.0mm
VCC1
VCC3
16
GND
15
14
13
12
RFOUT
Features
RFIN
1
Frequency Range 1850MHz to
2050MHz
Internally Matched to 50 on All
RF Ports
Analog Voltage Variable
Attenuator with 3.3V Control
Range
Bypass Mode of LNA for High
Dynamic Range
Max Gain = 35dB min.
Noise Figure of 0.65dB Typical
Gain Control Range = 35dB
High IIP3 = 2dBm
Single +5V Supply
Small 16-Pin, 8.0mm x 8.0mm,
Multi-Chip Module (MCM)
GND
2
3
Voltage
Variable
Attenuator
GND
11
10
9
GND
SCN
GND
GND
4
5
VCC2
VVA_CTRL
6
SCP
7
VenderID1
8
VenderID2
Functional Block Diagram
Product Description
RFMD's RFLA1018 is an analog-controlled voltage-variable gain amplifier featuring
high linearity and very low noise figure. This LNA with bypass mode and variable
attenuator provides a minimum 35dB of dynamic gain range. The RFLA1018 has a
3.3V control range with maximum gain at 0V. The LNA is temperature compensated
to reduce gain variation. A noise figure of 0.65dB and an IIP3 of 2dBm make this
component ideal for receiver input lineups. The RFLA1018 is packaged in a small
8.0mm x 8.0mm leadless laminate MCM. This module is internally matched to 50
on all RF ports, making it easy to use with no external matching components
required.
Applications
Cellular Base station, Remote
Radio Heads
Active Antenna Radios
3G, LTE Infrastructure
Low Noise, Variable Gain with
High Linearity
Ordering Information
RFLA1018SR
RFLA1018SQ
RFLA1018TR7
RFLA1018TTR13
RFLA1018PCK-410
7" Reel with 100 pieces
Sample Bag with 25 pieces
7" Reel with 750 pieces
13" Reel with 2500 pieces
1850MHz to 2050MHz PCBA with 5-piece sample bag
Optimum Technology Matching
®
Applied
DS141218
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
BiFET HBT
SOI
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
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Description VARIABLE GAIN LOW NOISE HIGH LINEARITY AMPLIFIER VARIABLE GAIN LOW NOISE HIGH LINEARITY AMPLIFIER VARIABLE GAIN LOW NOISE HIGH LINEARITY AMPLIFIER VARIABLE GAIN LOW NOISE HIGH LINEARITY AMPLIFIER
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