SGC2363ZPCK1 datasheet, PDF - EEWORLD Datasheet

SGC2363Z

50MHz to

4000MHz

Active Bias Sili-

con Germa-

nium

Cascadable

Gain Block

SGC2363Z

50MHz to 4000MHz ACTIVE BIAS SILICON

GERMANIUM CASCADABLE GAIN BLOCK

Package: SOT-363

Product Description

RFMD’s SGC2363Z is a high performance SiGe HBT MMIC amplifier utiliz-

ing a Darlington configuration with a patented active-bias network. The

active bias network provides stable current over temperature and process

Beta variations. Designed to run directly from a 3V supply, the SGC2363Z

does not require a dropping resistor as compared to typical Darlington

amplifiers. The SGC2363Z is designed for high linearity 3V gain block

applications that require small size and minimal external components. It is

internally matched to 50.

Optimum Technology

Matching® Applied

GaAs HBT

GaAs MESFET

InGaP HBT

SiGe BiCMOS

Si BiCMOS

30

20

S21

Features



Single, Fixed 3V Supply

No Dropping Resistor

Required

Patented Self-Bias Circuitry

P

1dB

=10.1dBm at 1950MHz

OIP

3

=23dBm at 1950MHz

Robust 1000V ESD, Class 1C

HBM

PA Driver Amplifier

Cellular, PCS, GSM, UMTS,

WCDMA

IF Amplifier

Wireless Data, Satellite

Gain & Return Loss

V

D

= 3V, I

D

= 26mA

Applications



Gain, RL (dB)

10

0

-10

-20

-30

0

0.5

1

1.5

2

2.5

3

3.5

4

Bias Tee Data, Z

S

= Z

L

= 50 Ohms, T

L

= 25C



SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

RF MEMS

S22

S11



Frequency (GHz)

Parameter

Small Signal Gain

Min.

15.5

11.6

Specification

Typ.

Max.

Unit

Condition

17.0

18.5

dB

850MHz

13.1

14.6

dB

1950MHz

12.3

dB

2400MHz

Output Power at 1dB Compression

10.4

dBm

850MHz

9.1

10.1

dBm

1950MHz

9.6

dBm

2400MHz

Output Third Order Intercept Point

23.0

dBm

850MHz

21.0

23.0

dBm

1950MHz

24.0

dBm

2400MHz

Input Return Loss

12.0

15.0

dB

1950MHz

Output Return Loss

10.5

14.5

dB

1950MHz

Noise Figure

3.7

4.8

dB

1930MHz

Thermal Resistance

255

°C/W

junction - lead

Device Operating Voltage

3.0

V

Device Operating Current

22.0

26.0

30.0

mA

Test Conditions: V

D

=3V, I

D

=26mA Typ., OIP

3

Tone Spacing=1MHz, P

OUT

per tone=-5dBm, T

L

=25°C, Z

S

=Z

L

=50

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.

DS111011

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

1 of 6

SGC2363Z

Absolute Maximum Ratings

Parameter

Device Current (I

CE

)

Device Voltage (V

CE

)

RF Input Power* (See Note)

Junction Temp (T

J

)

Operating Temp Range (T

L

)

Storage Temp

ESD Rating - Human Body Model

(HBM)

Moisture Sensitivity Level

Rating

55

4

12

+150

-40 to +85

+150

Class 1C

MSL 1

Unit

mA

V

dBm

°C

Caution! ESD sensitive device.

Exceeding any one or a combination of the Absolute Maximum Rating conditions may

cause permanent damage to the device. Extended application of Absolute Maximum

Rating conditions to the device may reduce device reliability. Specified typical perfor-

mance or functional operation of the device under Absolute Maximum Rating condi-

tions is not implied.

The information in this publication is believed to be accurate and reliable. However, no

responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any

infringement of patents, or other rights of third parties, resulting from its use. No

license is granted by implication or otherwise under any patent or patent rights of

RFMD. RFMD reserves the right to change component circuitry, recommended appli-

cation circuitry and specifications at any time without prior notice.

RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free

per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric

materials and red phosphorus as a flame retardant, and <2% antimony in

solder.

*Note: Load condition Z

L

=50.

Operation of this device beyond any one of these limits may cause permanent dam-

age. For reliable continuous operation, the device voltage and current must not

exceed the maximum operating values specified in the table on page one.

Bias Conditions should also satisfy the following expression:

I

D

V

D

<(T

J

-T

L

)/R

TH

, j-l and T

L

=T

LEAD

Typical RF Performance with Application Circuit at Key Operating Frequencies

Parameter

Unit

dB

dBm

dB

100

MHz

18.4

23.0

12.1

23.5

22.5

20.5

500

MHz

18.1

23.5

11.0

19.0

18.5

21.5

850

MHz

17.0

23.0

10.4

18.0

16.5

22.0

3.3

1950

MHz

13.1

23.0

10.1

15.0

14.5

20.5

3.7

2400

MHz

12.3

24.0

9.6

16.5

13.0

20.0

3.9

3500

MHz

9.8

22.0

8.3

14.0

12.5

19.0

4.7

Small Signal Gain (G)

Output Third Order Intercept Point (OIP

3

)

Output Power at 1dB Compression (P

1dB

)

Input Return Loss (IRL)

Output Return Loss (ORL)

Reverse Isolation (S

12

)

Noise Figure (NF)

dB

2.9

3.0

Test Conditions: V

D

=3V I

D

=26mA Typ. OIP

3

Tone Spacing=1MHz, P

OUT

per tone=-5dBm

T

L

=25°C Z

S

=Z

L

=50

Typical Performance with Bias Tee, V

D

=3V, I

D

=26mA

OIP3 vs. Frequency (-5dBm/tone, 1MHz spacing)

28

15

P1dB vs. Frequency

26

13

P1dB (dBm)

OIP3 (dBm)

24

11

22

25C

20

-40C

85C

18

0

0.5

1

1.5

2

2.5

3

3.5

9

25C

7

-40C

85C

5

0

0.5

1

1.5

2

2.5

3

3.5

Frequency (GHz)

2 of 6

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

DS111011

SGC2363Z

Typical Performance with Bias Tee, V

D

= 3V, I

D

= 26mA

6.0

NF vs. Frequency

40

35

Current vs. Voltage

+25C

-40C

5.0

30

+85C

NF (dB)

4.0

25

Id (mA)

25C

85C

0

0.5

1

1.5

2

2.5

3

3.5

20

15

10

5

3.0

2.0

1.0

0

0.5

1

1.5

2

2.5

3

3.5

4

Frequency (GHz)

Vd (V)

|S11| over Frequency

0

-5

-10

25C

-40C

85C

|S21| over Frequency

20

16

Gain (dB)

S11 (dB)

12

8

4

0

25C

-40C

85C

-15

-20

-25

-30

0

0.5

1

1.5

2

2.5

3

3.5

4

0

0.5

1

1.5

2

2.5

3

3.5

4

Frequency (GHz)

|S12| over Frequency

0

-5

25C

-40C

0

-5

-10

|S22| over Frequency

25C

-40C

85C

S12 (dB)

-10

-15

-20

-25

-30

0

0.5

S22 (dB)

1.5

2

2.5

3

3.5

4

85C

-15

-20

-25

-30

0

0.5

1

1.5

2

2.5

3

3.5

4

1

Frequency (GHz)

DS111011

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3 of 6

SGC2363Z

3

1, 2,

4, 5

6

Function

RF IN

GND

RF OUT/DC

BIAS

Description

RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation.

Connection to ground. Use via holes as close to the device ground as possible to reduce ground inductance and achieve

optimum RF performance.

RF output and bias pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of opera-

tion.

SOT-363 PCB Pad Layout

Dimensions in inches [millimeters]

RF

OUT

RF

IN

Notes:

1. Provide a large ground pad area under device pins 1,

2, 4, and 5 with several plated-through holes placed as

shown.

2. 1-2 ounce finished copper thickness is recommended.

3. RF I/O lines are 50Ω

Package Drawing

Dimensions in inches (millimeters)

Refer to drawing posted at www.rfmd.com for tolerances.

4 of 6

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support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

DS111011

SGC2363Z

Application Schematic

Vd

Application Circuit Element Values

Reference

Designator

100-2000MHz

2000-4000MHz

1uF

1000pF

C3

L1

C1

C2

C3

1000pF

100pF

150nH

2.7pF

6.8pF

39nH

1,2

RF IN

C1

3

SGC-2363Z

L1

6

C2

RF OUT

4,5

Evaluation Board Layout

1uF

1000pF

C3

L1

C1

C2

DS111011

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

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5 of 6

Parameter Name	Attribute value
Maximum operating temperature	85 Cel
Minimum operating temperature	-40 Cel
Maximum input power	12 dBm
Maximum operating frequency	4000 MHz
Minimum operating frequency	50 MHz
Processing package description	SOT-363, 6 PIN
Lead-free	Yes
EU RoHS regulations	Yes
state	ACTIVE
structure	COMPONENT
terminal coating	NOT SPECIFIED
Impedance characteristics	50 ohm
Microwave RF Type	WIDE band low POWER

	SGC2363ZPCK1	SGC2363ZPCK2	SGC2363Z	SGC2363ZSQ	SGC2363ZSR
Description	50 MHz - 4000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER	50 MHz - 4000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER	50 MHz - 4000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER	50 MHz - 4000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER	50 MHz - 4000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
Maximum operating temperature	85 Cel	85 Cel	85 Cel	85 Cel	85 Cel
Minimum operating temperature	-40 Cel	-40 Cel	-40 Cel	-40 Cel	-40 Cel
Maximum input power	12 dBm	12 dBm	12 dBm	12 dBm	12 dBm
Maximum operating frequency	4000 MHz	4000 MHz	4000 MHz	4000 MHz	4000 MHz
Minimum operating frequency	50 MHz	50 MHz	50 MHz	50 MHz	50 MHz
Processing package description	SOT-363, 6 PIN	SOT-363, 6 PIN	SOT-363, 6 PIN	SOT-363, 6 PIN	SOT-363, 6 PIN
state	ACTIVE	ACTIVE	ACTIVE	ACTIVE	ACTIVE
structure	COMPONENT	COMPONENT	COMPONENT	COMPONENT	COMPONENT
Impedance characteristics	50 ohm	50 ohm	50 ohm	50 ohm	50 ohm
Microwave RF Type	WIDE band low POWER	WIDE band low POWER	WIDE band low POWER	WIDE band low POWER	WIDE band low POWER
Lead-free	Yes	Yes	Yes	-	-
EU RoHS regulations	Yes	Yes	Yes	-	-
terminal coating	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	-

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