RFMD’s SGC2363Z is a high performance SiGe HBT MMIC amplifier utiliz-
ing a Darlington configuration with a patented active-bias network. The
active bias network provides stable current over temperature and process
Beta variations. Designed to run directly from a 3V supply, the SGC2363Z
does not require a dropping resistor as compared to typical Darlington
amplifiers. The SGC2363Z is designed for high linearity 3V gain block
applications that require small size and minimal external components. It is
internally matched to 50.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
30
20
S21
Features
Single, Fixed 3V Supply
No Dropping Resistor
Required
Patented Self-Bias Circuitry
P
1dB
=10.1dBm at 1950MHz
OIP
3
=23dBm at 1950MHz
Robust 1000V ESD, Class 1C
HBM
PA Driver Amplifier
Cellular, PCS, GSM, UMTS,
WCDMA
IF Amplifier
Wireless Data, Satellite
Gain & Return Loss
V
D
= 3V, I
D
= 26mA
Applications
Gain, RL (dB)
10
0
-10
-20
-30
0
0.5
1
1.5
2
2.5
3
3.5
4
Bias Tee Data, Z
S
= Z
L
= 50 Ohms, T
L
= 25C
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
S22
S11
Frequency (GHz)
Parameter
Small Signal Gain
Min.
15.5
11.6
Specification
Typ.
Max.
Unit
Condition
17.0
18.5
dB
850MHz
13.1
14.6
dB
1950MHz
12.3
dB
2400MHz
Output Power at 1dB Compression
10.4
dBm
850MHz
9.1
10.1
dBm
1950MHz
9.6
dBm
2400MHz
Output Third Order Intercept Point
23.0
dBm
850MHz
21.0
23.0
dBm
1950MHz
24.0
dBm
2400MHz
Input Return Loss
12.0
15.0
dB
1950MHz
Output Return Loss
10.5
14.5
dB
1950MHz
Noise Figure
3.7
4.8
dB
1930MHz
Thermal Resistance
255
°C/W
junction - lead
Device Operating Voltage
3.0
V
Device Operating Current
22.0
26.0
30.0
mA
Test Conditions: V
D
=3V, I
D
=26mA Typ., OIP
3
Tone Spacing=1MHz, P
OUT
per tone=-5dBm, T
L
=25°C, Z
S
=Z
L
=50
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
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