CHM4435AZPTGP datasheet, PDF - EEWORLD Datasheet

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CHM4435AZPTGP: DescriptionTransistor,; CategoryDiscrete semiconductor The transistor; File Size194KB，2 Pages; ManufacturerCHENMKO; Websitehttp://www.chenmko.com/

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CHM4435AZPTGP Overview

Transistor,

CHM4435AZPTGP Parametric

Parameter Name	Attribute value
Maker	CHENMKO
package instruction	,
Reach Compliance Code	unknown

CHM4435AZPTGP Preview

CHENMKO ENTERPRISE CO.,LTD

SURFACE MOUNT

P-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 30 Volts

APPLICATION

* Servo motor control.

* Power MOSFET gate drivers.

* Other switching applications.

CHM4435AZPT

CURRENT 8.8 Ampere

FEATURE

* Small flat package. ( SC-73/SOT-223 )

* High density cell design for extremely low R

DS(ON)

* Rugged and reliable.

6.50+0.20

3.00+0.10

SC-73/SOT-223

1.65+0.15

0.90+0.05

2.0+0.3

CONSTRUCTION

* P-Channel Enhancement

0.70+0.10

2.30+0.1

3.5+0.2

7.0+0.3

0.9+0.2

2.0+0.3

0.70+0.10

4.60+0.1

0.27+0.05

0.01~0.10

1 Gate

CIRCUIT

2 Source

3 Drain ( Heat Sink )

Dimensions in millimeters

SC-73/SOT-223

Absolute Maximum Ratings

Symbol

Parameter

= 25°C unless otherwise noted

CHM4435AZPT

Units

DSS

GSS

Drain-Source Voltage

Gate-Source Voltage

Maximum Drain Current - Continuous

-30

-8.8

- Pulsed

STG

Maximum Power Dissipation

Operating Temperature Range

Storage Temperature Range

(Note 3)

-35

3000

-55 to 150

°C

Note : 1. Surface Mounted on FR4 Board , t <=10sec

2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2%

3. Repetitive Rating , Pulse width linited by maximum junction temperature

4. Guaranteed by design , not subject to production trsting

Thermal characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1)

°C/W

2005-02

RATING CHARACTERISTIC CURVES ( CHM4435AZPT )

Electrical Characteristics

Symbol

Parameter

= 25°C unless otherwise noted

Conditions

Min

Typ

Max

Units

OFF CHARACTERISTICS

DSS

GSSF

GSSR

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage

= 0 V, I

= -250 µA

= -24 V, V

= 0 V

= 20V,V

= 0 V

= -20V, V

= 0 V

-30

-1

+100

-100

µA

ON CHARACTERISTICS

(Note 2)

GS(th)

DS(ON)

Gate Threshold Voltage

Static Drain-Source On-Resistance

= V

, I

= -250 µA

=-10V, I

=-8.8A

=-4.5V, I

=-5.0A

-1

-3

Ω

Forward Transconductance

= -15V, I

= -8.8A

SWITCHING CHARACTERISTICS

(Note 4)

off

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Time

Rise Time

Turn-Off Time

Fall Time

=-15V, I

=-4.6A

=-5V

= -15V

= -1.0A , V

= -10 V

GEN

= 6

Ω

110

140

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Drain-Source Diode Forward Current

(Note 1)

-2.1

-1.2

Drain-Source Diode Forward Voltage I

= -2.1A , V

= 0 V

(Note 2)

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