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Datasheet> All Categories > Discrete semiconductor> diode> RG4AWS
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RG4AWS

Description
Rectifier Diode, 1 Phase, 1 Element, 2A, Silicon,
CategoryDiscrete semiconductor    diode   
File Size27KB，1 Pages
ManufacturerSANKEN
Websitehttp://www.sanken-ele.co.jp/en/
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RG4AWS Overview

Rectifier Diode, 1 Phase, 1 Element, 2A, Silicon,

RG4AWS Parametric

Parameter NameAttribute value
MakerSANKEN
package instructionO-PALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
applicationULTRA FAST RECOVERY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current50 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current2 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
Maximum reverse recovery time0.1 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL

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Ultra-Fast-Recovery Rectifier Diodes
Absolute Maximum Ratings
Parameter
Type No.
V
RM
(V)
I
F (AV)
(A)
( ) is with
Heatsink
I
FSM
(A)
50Hz
Half-cycle Sinewave
Single Shot
Tj
(°C)
Tstg
(°C)
V
F
(V)
max
I
F
(A)
I
R
(mA)
V
R
= V
RM
V
R
= V
RM
Ta =100°C max
max
Electrical Characteristics (Ta = 25°C)
t
rr

t
rr
Œ
I
R
(H)
(ns)
(ns)
(mA)
I
F
/
I
RP
(mA)
I
F
/
I
RP
(mA)
Others
Rth (j- )
(°C/ W)
Mass
Fig.
(g)
RG 4Y
RG 4Z
RG 4
RG 4A
RG 4C
70
200
2.0 (3.5)
100
1.3
1.7
3.5
1.0
5.0
100/100
100
0.5
2.0
2.5
500/500
500/1000
50
100/200
8
1.2
A
1.0 (3.0)
400
600
1.0 (2.0)
1000
80
–40 to +150
50
60
1.8
2.0
3.0
3.0
RG 4Y
I
F(AV)
(A)
I
FSM
(A)
20•20•1t Cu
I
FSM
(A)
5
Ta—I
F(AV)
Derating
V
F
—I
F
Characteristics
(Typical)
20
10
Forward Current I
F
(A)
100
I
FMS
Rating
4
5mm
5mm
80
20ms
Average Forward Current
1
Peak Forward Surge Current
3
W
W
60
2
ith
ou
0.1
tH
ea
ts
ink
1
0.01
T
a
= 150ºC
100ºC
60ºC
25ºC
ith
He
at
sin
k
40
20
0
0
25
50 60 75
100 125
Ambient Temperature Ta (°C)
150
0.001
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7
Forward Voltage V
F
(V)
0
1
5
10
Overcurrent Cycles
50
RG 4Z, RG 4, RG 4A
I
F(AV)
(A)
10
Forward Current I
F
(A)
70
60
50
40
30
20
10
I
FSM
(A)
20•20•1 t Cu
I
FSM
(A)
5
Ta—I
F(AV)
Derating
V
F
—I
F
Characteristics
(Typical)
30
80
I
FMS
Rating
4
20ms
5mm
5mm
Average Forward Current
1
Peak Forward Surge Current
RG 4Z, RG 4
3
W
ith
RG 4Z, RG 4
RG 4A
0.1
2
He
at
sin
k
Hea
T
a
= 150ºC
100ºC
60ºC
25ºC
1
0.01
RG 4A
With
0
out
0
tsin
k
25
50 60 75
100 125
Ambient Temperature Ta (°C)
150
0.001
0.2
0.6
1.0
1.4
1.8
Forward Voltage V
F
(V)
2.2
0
1
5
10
Overcurrent Cycles
50
RG 4C
2.0
I
F(AV)
(A)
Ta—I
F(AV)
Derating
20•20•1t Cu
V
F
—I
F
Characteristics
(Typical)
6
I
FSM
(A)
60
50
40
30
20
10
I
FMS
Rating
I
FSM
(A)
Forward Current I
F
(A)
1.6
5mm
5mm
1
T
a
= 25ºC
20ms
1.2
0.1
0.8
0.01
0.4
0
0
25 40 50
75
100 125
Ambient Temperature Ta (°C)
150
0.001
0.4
Peak Forward Surge Current
Average Forward Current
0.8
1.2
1.6 2.0 2.4
Forward Voltage V
F
(V)
2.8
0
1
5
10
Overcurrent Cycles
50
External Dimensions
(Unit: mm)
Flammability:
UL94V-0 or Equivalent
Fig.
A
1.4
±0.1
Cathode Mark
50.0
±1.0
8.0
±0.2
6.5
±0.2
47

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Description Rectifier Diode, 1 Phase, 1 Element, 2A, Silicon, Rectifier Diode, 1 Phase, 1 Element, 3A, Silicon, Rectifier Diode, 1 Phase, 1 Element, 3A, Silicon, Rectifier Diode, 1 Phase, 1 Element, 3.5A, Silicon, Rectifier Diode, 1 Phase, 1 Element, 3.5A, Silicon, Rectifier Diode, 1 Phase, 1 Element, 3A, Silicon, Rectifier Diode, 1 Phase, 1 Element, 3A, Silicon, Rectifier Diode, 1 Phase, 1 Element, 2A, Silicon, Rectifier Diode, 1 Phase, 1 Element, 2A, Silicon, Rectifier Diode, 1 Phase, 1 Element, 2A, Silicon,
package instruction O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
application ULTRA FAST RECOVERY ULTRA FAST RECOVERY ULTRA FAST RECOVERY ULTRA FAST RECOVERY ULTRA FAST RECOVERY ULTRA FAST RECOVERY ULTRA FAST RECOVERY ULTRA FAST RECOVERY ULTRA FAST RECOVERY ULTRA FAST RECOVERY
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Maximum non-repetitive peak forward current 50 A 80 A 80 A 100 A 100 A 80 A 80 A 50 A 60 A 60 A
Number of components 1 1 1 1 1 1 1 1 1 1
Phase 1 1 1 1 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2 2 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C
Maximum output current 2 A 3 A 3 A 3.5 A 3.5 A 3 A 3 A 2 A 2 A 2 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum reverse recovery time 0.1 µs 0.1 µs 0.1 µs 0.1 µs 0.1 µs 0.1 µs 0.1 µs 0.1 µs 0.1 µs 0.1 µs
surface mount NO NO NO NO NO NO NO NO NO NO
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL
Base Number Matches - 1 1 1 1 1 1 - - -

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