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P027RH02DL0

Description
Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,200V V(DRM),100A I(T),TO-208AC
CategoryAnalog mixed-signal IC    Trigger device   
File Size283KB,4 Pages
ManufacturerIXYS
Download Datasheet Parametric View All

P027RH02DL0 Overview

Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,200V V(DRM),100A I(T),TO-208AC

P027RH02DL0 Parametric

Parameter NameAttribute value
MakerIXYS
package instruction,
Reach Compliance Codeunknown
ECCN codeEAR99
Nominal circuit commutation break time15 µs
Critical rise rate of minimum off-state voltage50 V/us
Maximum DC gate trigger current100 mA
Maximum DC gate trigger voltage3 V
Maximum holding current400 mA
Maximum leakage current10 mA
On-state non-repetitive peak current350 A
Maximum on-state current100000 A
Maximum operating temperature125 °C
Minimum operating temperature-30 °C
Off-state repetitive peak voltage200 V
surface mountNO
Trigger device typeSCR
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