BSP220 datasheet, PDF - EEWORLD Datasheet

BSP220: DescriptionSmall Signal Field-Effect Transistor, 0.225A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET; CategoryDiscrete semiconductor The transistor; File Size149KB，15 Pages; ManufacturerNexperia; Websitehttps://www.nexperia.com; Environmental Compliance

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BSP220 Overview

Small Signal Field-Effect Transistor, 0.225A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Nexperia
package instruction	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	compliant
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V
Maximum drain current (ID)	0.225 A
Maximum drain-source on-resistance	12 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	15 pF
JESD-30 code	R-PDSO-G4
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	4
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	P-CHANNEL
Guideline	IEC-134
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON

	BSP220	934000490115
Description	Small Signal Field-Effect Transistor, 0.225A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET	Small Signal Field-Effect Transistor, 0.225A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Is it Rohs certified?	conform to	conform to
package instruction	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	compliant	compliant
Shell connection	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V	200 V
Maximum drain current (ID)	0.225 A	0.225 A
Maximum drain-source on-resistance	12 Ω	12 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	15 pF	15 pF
JESD-30 code	R-PDSO-G4	R-PDSO-G4
JESD-609 code	e3	e3
Humidity sensitivity level	1	1
Number of components	1	1
Number of terminals	4	4
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	P-CHANNEL	P-CHANNEL
Guideline	IEC-134	IEC-134
surface mount	YES	YES
Terminal surface	Tin (Sn)	Tin (Sn)
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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