Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
Parameter Name | Attribute value |
Maker | Toshiba Semiconductor |
package instruction | SMALL OUTLINE, R-PDSO-F6 |
Reach Compliance Code | unknown |
Maximum collector current (IC) | 0.15 A |
Collector-emitter maximum voltage | 50 V |
Configuration | SEPARATE, 2 ELEMENTS |
Minimum DC current gain (hFE) | 120 |
JESD-30 code | R-PDSO-F6 |
Number of components | 2 |
Number of terminals | 6 |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Polarity/channel type | NPN |
surface mount | YES |
Terminal form | FLAT |
Terminal location | DUAL |
transistor applications | AMPLIFIER |
Transistor component materials | SILICON |
Nominal transition frequency (fT) | 80 MHz |
HN1C01FE-Y(5LMAA,F | HN1C01FE-Y(T5L,F,T | HN1C01FE-GR,LF(T | HN1C01FE-Y,LF | HN1C01FE-GR,LF | HN1C01FE-GR | HN1C01FE-Y | HN1C01FE-GR(T5L,F) | HN1C01FEY | |
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Description | Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon | tran dual npn 50v 0.15a es6 | tran dual npn 50v 0.15a es6 | TRANS 2NPN 50V 0.15A ES6 | TRANS 2NPN 50V 0.15A ES6 | TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-2N1G, ES6, 6 PIN, BIP General Purpose Small Signal | TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-2N1G, ES6, 6 PIN, BIP General Purpose Small Signal | Small Signal Bipolar Transistor | TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-2N1G, ES6, 6 PIN, BIP General Purpose Small Signal |
Maker | Toshiba Semiconductor | - | - | - | - | Toshiba Semiconductor | Toshiba Semiconductor | Toshiba Semiconductor | Toshiba Semiconductor |
Reach Compliance Code | unknown | - | - | - | - | unknown | unknown | unknown | unknown |