UF9640G-TN3-R datasheet, PDF - EEWORLD Datasheet

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UF9640G-TN3-R: DescriptionP-CHANNEL POWER MOSFET; CategoryDiscrete semiconductor The transistor; File Size288KB，8 Pages; ManufacturerUNISONIC TECHNOLOGIES CO.,LTD; Websitehttp://www.unisonic.com.tw/

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UF9640G-TN3-R Overview

P-CHANNEL POWER MOSFET

UF9640G-TN3-R Parametric

Parameter Name	Attribute value
Maker	UNISONIC TECHNOLOGIES CO.,LTD
package instruction	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	compliant
Avalanche Energy Efficiency Rating (Eas)	700 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V
Maximum drain current (ID)	11 A
Maximum drain-source on-resistance	0.5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252
JESD-30 code	R-PSSO-G2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	P-CHANNEL
Maximum pulsed drain current (IDM)	44 A
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON

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UNISONIC TECHNOLOGIES CO., LTD

UF9640

11 Amps, 200 Volts

P-CHANNEL POWER MOSFET



DESCRIPTION

Power MOSFET

The

UF9640

is a P-channel Power MOSFET that developed by

UTC’s advanced technlogy. The device has an advantage of

including fast switching, low on-resistance, ruggedized device design

and low cost-effectiveness.

This type of package is generally applied in applications in the

commercial-industrial field especially suitable for the power

consumption at approximately 50W. Because of its low package cost

and low thermal resistance, this package is widely applied in the

industry field.



FEATURES

* Fast switching speed

* P-channel MOSFET

* Repetitive avalanche rated

* Simple drive requirements

* Ease of paralleling



SYMBOL

www.unisonic.com.tw

1 of 8

QW-R502-484.E

UF9640G-TN3-R Related Products

	UF9640G-TN3-R	UF9640G-TF3-T	UF9640G-TQ2-R	UF9640L-TN3-R	UF9640L-TQ2-R	UF9640L-TQ2-T	UF9640_15	UF9640L-TA3-T	UF9640G-TQ2-T	UF9640L-TF3-T
Description	P-CHANNEL POWER MOSFET	P-CHANNEL POWER MOSFET	P-CHANNEL POWER MOSFET	P-CHANNEL POWER MOSFET	P-CHANNEL POWER MOSFET	P-CHANNEL POWER MOSFET	P-CHANNEL POWER MOSFET	11 Amps, 200 Volts P-CHANNEL POWER MOSFET	P-CHANNEL POWER MOSFET	P-CHANNEL POWER MOSFET
Maker	UNISONIC TECHNOLOGIES CO.,LTD	UNISONIC TECHNOLOGIES CO.,LTD	UNISONIC TECHNOLOGIES CO.,LTD	UNISONIC TECHNOLOGIES CO.,LTD	UNISONIC TECHNOLOGIES CO.,LTD	UNISONIC TECHNOLOGIES CO.,LTD	-	UNISONIC TECHNOLOGIES CO.,LTD	UNISONIC TECHNOLOGIES CO.,LTD	UNISONIC TECHNOLOGIES CO.,LTD
package instruction	SMALL OUTLINE, R-PSSO-G2	FLANGE MOUNT, R-PSFM-T3	TO-263, 3/2 PIN	SMALL OUTLINE, R-PSSO-G2	TO-263, 3/2 PIN	TO-263, 3/2 PIN	-	FLANGE MOUNT, R-PSFM-T3	TO-263, 3/2 PIN	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	compliant	compli	compliant	compliant	compliant	compliant	-	compli	compliant	compli
Avalanche Energy Efficiency Rating (Eas)	700 mJ	700 mJ	700 mJ	700 mJ	700 mJ	700 mJ	-	700 mJ	700 mJ	700 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	-	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V	200 V	200 V	200 V	200 V	200 V	-	200 V	200 V	200 V
Maximum drain current (ID)	11 A	11 A	11 A	11 A	11 A	11 A	-	11 A	11 A	11 A
Maximum drain-source on-resistance	0.5 Ω	0.5 Ω	0.5 Ω	0.5 Ω	0.5 Ω	0.5 Ω	-	0.5 Ω	0.5 Ω	0.5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	-	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252	TO-220AB	TO-263AB	TO-252	TO-263AB	TO-263AB	-	TO-220AB	TO-263AB	TO-220AB
JESD-30 code	R-PSSO-G2	R-PSFM-T3	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	-	R-PSFM-T3	R-PSSO-G2	R-PSFM-T3
Number of components	1	1	1	1	1	1	-	1	1	1
Number of terminals	2	3	2	2	2	2	-	3	2	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	-	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	FLANGE MOUNT	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	-	FLANGE MOUNT	SMALL OUTLINE	FLANGE MOUNT
Polarity/channel type	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	-	P-CHANNEL	P-CHANNEL	P-CHANNEL
Maximum pulsed drain current (IDM)	44 A	44 A	44 A	44 A	44 A	44 A	-	44 A	44 A	44 A
surface mount	YES	NO	YES	YES	YES	YES	-	NO	YES	NO
Terminal form	GULL WING	THROUGH-HOLE	GULL WING	GULL WING	GULL WING	GULL WING	-	THROUGH-HOLE	GULL WING	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	-	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	-	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	-	SILICON	SILICON	SILICON

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