Diode
RapidSwitchingEmitterControlledDiode
IDW60C65D1
EmitterControlledDiodeRapid1CommonCathodeSeries
Datasheet
IndustrialPowerControl
IDW60C65D1
EmitterControlledDiodeRapid1CommonCathodeSeries
RapidSwitchingEmitterControlledDiode
A1
A1 C1 C2 A2
A2
C
1
2
3
Features:
•QualifiedaccordingtoJEDECfortargetapplications
•650VEmitterControlledtechnology
•Temperaturestablebehaviourofkeyparameters
•Lowforwardvoltage(V
F
)
•Ultrafastrecovery
•Lowreverserecoverycharge(Q
rr
)
•Lowreverserecoverycurrent(I
rrm
)
•175°Cjunctionoperatingtemperature
•Pb-freeleadplating
•RoHScompliant
Applications:
•AC/DCconverters
•BoostdiodeinPFCstages
•Freewheelingdiodesininvertersandmotordrives
•Generalpurposeinverters
•Switchmodepowersupplies
Packagepindefinition:
•Pin1-anode(A1)
•Pin2andbackside-cathode(C)
•Pin3-anode(A2)
Key Performance and Package Parameters
Type
IDW60C65D1
V
rrm
650V
I
f
2x 30A
V
f
,
T
vj
=25°C
1.35V
T
vjmax
175°C
Marking
C60ED1
Package
PG-TO247-3
2
Rev.2.1,2014-12-10
IDW60C65D1
EmitterControlledDiodeRapid1CommonCathodeSeries
Table of Contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings (per leg) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistances (per leg) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
3
Rev.2.1,2014-12-10
IDW60C65D1
EmitterControlledDiodeRapid1CommonCathodeSeries
Maximum Ratings (per leg)
For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the maximum ratings stated in this datasheet.
Parameter
Repetitivepeakreversevoltage,T
vj
≥25°C
Diodeforwardcurrent,limitedbyT
vjmax
T
C
=25°C
T
C
=100°C
Diodepulsedcurrent,t
p
limitedbyT
vjmax
Diode surge non repetitive forward current
T
C
=25°C,t
p
=10.0ms,sinehalfwave
PowerdissipationT
C
=25°C
PowerdissipationT
C
=100°C
Operating junction temperature
Storage temperature
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s
Mounting torque, M3 screw
Maximum of mounting processes: 3
Thermal Resistances (per leg)
Parameter
Characteristic
Diode thermal resistance,
1)
junction - case
Thermal resistance
junction - ambient
Symbol Conditions
Symbol
V
RRM
I
F
I
Fpuls
I
FSM
P
tot
T
vj
T
stg
Value
650
60.0
30.0
90.0
240.0
142.0
71.0
-40...+175
-55...+150
260
Unit
V
A
A
A
W
°C
°C
°C
Nm
M
0.6
Max. Value
Unit
R
th(j-c)
R
th(j-a)
1.06
40
K/W
K/W
Electrical Characteristics (per leg), at T
vj
= 25°C, unless otherwise specified
Parameter
Static Characteristic
V
F
I
F
=30.0A
T
vj
=25°C
T
vj
=125°C
T
vj
=175°C
V
R
=650V
T
vj
=25°C
T
vj
=175°C
-
-
-
-
-
1.35
1.32
1.28
1.70
-
-
Symbol Conditions
Value
min.
typ.
max.
Unit
Diode forward voltage
V
Reverse leakage current
2)
I
R
-
40.0
1200.0
-
µA
Electrical Characteristic, at
T
vj
= 25°C, unless otherwise specified
Parameter
Dynamic Characteristic
Internal emitter inductance
measured 5mm (0.197 in.) from
case
1)
2)
Symbol Conditions
Value
min.
typ.
max.
Unit
L
E
-
13.0
-
nH
Pleasebeawarethatinnonstandardloadconditions,duetohighR
th(j-c)
,T
vj
closetoT
vjmax
canbereached.
Reverse leakage current per leg specified for operating conditions with zero voltage applied to the other leg.
4
Rev.2.1,2014-12-10
IDW60C65D1
EmitterControlledDiodeRapid1CommonCathodeSeries
Switching Characteristics (per leg), Inductive Load
Parameter
Diode Characteristic, at
T
vj
= 25°C
Diode reverse recovery time
Diode reverse recovery charge
Diode peak rate of fall of reverse
recoverycurrentduringt
b
Diode reverse recovery time
Diode reverse recovery charge
Diode peak rate of fall of reverse
recoverycurrentduringt
b
t
rr
Q
rr
T
vj
=25°C,
V
R
=400V,
I
F
=30.0A,
di
F
/dt=1000A/µs,
Lσ=30nH,
Cσ=40pF,
switch IGW50N65H5.
T
vj
=25°C,
V
R
=400V,
I
F
=30.0A,
di
F
/dt=200A/µs,
Lσ=30nH,
Cσ=40pF,
switch IGW50N65H5.
-
-
-
-
66
0.73
16.8
-1370
-
-
-
-
ns
µC
A
A/µs
Symbol Conditions
Value
min.
typ.
max.
Unit
Diode peak reverse recovery current
I
rrm
di
rr
/dt
t
rr
Q
rr
-
-
-
-
115
0.45
5.4
-660
-
-
-
-
ns
µC
A
A/µs
Diode peak reverse recovery current
I
rrm
di
rr
/dt
Switching Characteristics (per leg), Inductive Load
Parameter
Symbol Conditions
Value
min.
typ.
max.
Unit
Diode Characteristic, at
T
vj
= 175°C/125°C
Diode reverse recovery time
Diode reverse recovery charge
Diode peak rate of fall of reverse
recoverycurrentduringt
b
Diode reverse recovery time
Diode reverse recovery charge
Diode peak rate of fall of reverse
recoverycurrentduringt
b
t
rr
Q
rr
T
vj
=175°C,
V
R
=400V,
I
F
=30.0A,
di
F
/dt=1000A/µs,
Lσ=30nH,
Cσ=40pF,
switch IGW50N65H5.
T
vj
=125°C,
V
R
=400V,
I
F
=30.0A,
di
F
/dt=200A/µs,
Lσ=30nH,
Cσ=40pF,
switch IGW50N65H5.
-
-
-
-
105
1.83
25.6
-1000
-
-
-
-
ns
µC
A
A/µs
Diode peak reverse recovery current
I
rrm
di
rr
/dt
t
rr
Q
rr
-
-
-
-
154
0.98
9.8
-490
-
-
-
-
ns
µC
A
A/µs
Diode peak reverse recovery current
I
rrm
di
rr
/dt
5
Rev.2.1,2014-12-10
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