UNISONIC TECHNOLOGIES CO., LTD
UF460V
21A, 500V N-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The
UF460V
uses advanced UTC technology to provide
excellent R
DS(ON)
, low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch, in PWM
applications, motor controls, inverters, choppers, audio amplifiers
and high energy pulse circuits.
FEATURES
* R
DS(ON)
= 310mΩ@V
GS
= 10V, I
D
=21A
* Ultra low gate charge (max. 190nC )
* Low reverse transfer capacitance ( C
RSS
= typical 250pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
UF460VL-T3P-T
UF460VL-T47-T
Halogen Free
UF460VG-T3P-T
UF460VG-T47-T
Package
TO-3P
TO-247
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tube
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
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QW-R502-A05. A
UF460V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Power MOSFET
SYMBOL
RATINGS
UNIT
Gate-Source Voltage
V
GSS
±20
V
Continuous (V
GS
=0V)
I
D
Continuous Drain Current
21
A
Pulsed (Note 2)
Pulsed Drain Current
I
DM
84
A
Avalanche Current (Note2)
I
AR
21
A
Repetitive(Note2)
E
AR
30
Avalanche Energy
mJ
Single Pulsed(Note3)
E
AS
1200
Power Dissipation (T
C
=25°С)
P
D
190
W
Peak Diode Recovery dv/dt (Note4)
dv/dt
3.5
V/ns
Junction Temperature
T
J
+150
°С
Strong Temperature
T
STG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by T
J(MAX)
3. V
DD
=50V, Starting T
J
=25°С, Peak I
L
=21A
4. I
SD
≤21A,
di/dt≤160A/µs, V
DD
≤500V,
T
J
≤150°С,
Suggested=2.35Ω
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θ
JA
θ
jC
TEST CONDITIONS
RATINGS
30
0.42
MIN
500
TYP
UNIT
°С/W
°С/W
MAX UNIT
V
25
µA
±100 nA
V/°С
3
270
310
V
mΩ
ELECTRICAL CHARACTERISTICS
(T
J
=25°С, unless otherwise specified)
PARAMETER
SYMBOL
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
Drain-Source Leakage Current
I
DSS
Gate-Source Leakage Current
I
GSS
Breakdown Voltage Temperature Coefficient
∆BV
DSS
/∆T
J
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
Static Drain-Source On Resistance (Note)
R
DS(ON)
V
GS
=0 V, I
D
=250µA
V
DS
=400V,V
GS
=0 V
V
DS
=0 V, V
GS
= ±20V
Reference to 25°С, I
D
=1.0mA
V
DS
=V
GS
, I
D
=250 µA
V
GS
=10V, I
D
=14A
V
GS
=10V, I
D
=21A
0.78
1
210
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
DS
=25V, V
GS
=0V, f=1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
DS
=50V, V
GS
=10V,
Gate Source Charge
Q
GS
I
D
=1.3A
Gate Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Turn-ON Rise Time
t
R
V
DD
=30V, I
D
=0.5A,
R
G
=25Ω
Turn-OFF Delay Time
t
D(OFF)
Turn-OFF Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
I
S
=21A,V
GS
=0V, T
J
=25°С
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Reverse Recovery Time
t
RR
I
F
=21 A, dI/dt=100A/µs,
T
J
=25°С,V
DD
≤50V(Note)
Reverse Recovery Charge
Q
RR
Note: Pulse Test: Pulse width
≤300μs,
Duty cycle
≤2%
4300
1000
250
121
15
27.5
80
158
1570
386
1.8
21
pF
nC
ns
V
A
84
580
8.1
ns
µC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-A05. A
UF460V
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
V
GS
V
DS
L
15V
Driver
t
P
V
(BR)DSS
R
G
DUT
V
DD
+
-
0.01Ω
V
GS
=10V
0V
I
AS
t
P
I
AS
Unclamped Inductive Test Circuit
Unclamped Inductive Waveforms
V
G
2µF
12V
+
-
50KΩ
Q
G
10V
3µF
V
DS
+
-
Q
GS
Q
GD
V
GS
D.U.T
I
G(REF)
= 3mA
I
G
I
D
Charge
Basic Gate Charge Waveform
Gate Charge Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-A05. A
UF460V
TYPICAL CHARACTERISTICS
Power MOSFET
Drain Current, I
D
(µA)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Drain Current, I
D
(µA)
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QW-R502-A05. A
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