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Datasheet> All Categories > Discrete semiconductor> The transistor> SIHFSL9N60A
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SIHFSL9N60A

Description
TRANSISTOR 9.2 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, 3 PIN, FET General Purpose Power
CategoryDiscrete semiconductor    The transistor   
File Size195KB，9 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

SIHFSL9N60A Overview

TRANSISTOR 9.2 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, 3 PIN, FET General Purpose Power

SIHFSL9N60A Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerVishay
Parts packaging codeTO-262AA
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknown
Avalanche Energy Efficiency Rating (Eas)290 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage600 V
Maximum drain current (Abs) (ID)9.2 A
Maximum drain current (ID)9.2 A
Maximum drain-source on-resistance0.75 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-262AA
JESD-30 codeR-PSIP-T3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)240
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)170 W
Maximum pulsed drain current (IDM)37 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON

SIHFSL9N60A Preview

IRFSL9N60A, SiHFSL9N60A
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
()
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
49
13
20
Single
D
FEATURES
600
0.75
I
2
PAK
(TO-262)
•
Halogen-free According to IEC 61249-2-21
Definition
• Low Gate Charge Q
g
Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic
dV/dt Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
G
•
•
•
•
S
N-Channel MOSFET
Switch Mode Power Supply (SMPS)
Uninterruptable Power Supply
High Speed Power Switching
This Device is only for Through Hole Application
S
D
G
APPLICABLE OFF LINE SMPS TOPOLOGIES
• Active Clamped Forward
• Main Switch
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
I
2
PAK (TO-262)
SiHFSL9N60A-GE3
IRFSL9N60APbF
SiHFSL9N60A-E3
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
a
Linear Derating Factor
Single Pulse Avalanche Energy
b
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
a
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
T
C
= 25 °C
E
AS
I
AR
E
AR
P
D
dV/dt
T
J
, T
stg
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
600
± 30
9.2
5.8
37
1.3
290
9.2
17
170
5.0
- 55 to + 150
300
d
W/°C
mJ
A
mJ
W
V/ns
°C
A
UNIT
V
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
J
= 25 °C, L = 6.8 mH, R
g
= 25
,
I
AS
= 9.2 A (see fig. 12).
c. I
SD
9.2 A, dI/dt
50 A/μs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 90362
S11-1045-Rev. C, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFSL9N60A, SiHFSL9N60A
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient (PCB
Mounted, steady-state)
Maximum Junction-to-Case (Drain)
SYMBOL
R
thJA
R
thJC
TYP.
-
-
MAX.
40
0.75
UNIT
°C/W
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
C
oss
C
oss
eff.
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
GS
= 0, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
GS
= ± 30 V
V
DS
= 600 V, V
GS
= 0 V
V
DS
= 480 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= 10 V
I
D
= 5.5 A
b
V
DS
= 25 V, I
D
= 3.1 A
b
600
2.0
-
-
-
-
5.5
-
-
-
-
-
-
-
-
4.0
± 100
25
250
0.75
-
V
V
nA
μA
S
V
GS
= 0 V
V
DS
= 25 V
f = 1.0 MHz, see fig. 5
V
DS
= 1.0 V, f = 1.0 MHz
V
GS
= 0 V
V
DS
= 480 V, f = 1.0 MHz
V
DS
= 0 V to 480 V
c
I
D
= 9.2 A, V
DS
= 400 V
see fig. 6 and 13
b
-
-
-
-
-
-
-
1400
180
7.1
1957
49
96
-
-
-
13
25
30
22
-
-
-
-
-
-
49
13
20
-
-
-
-
ns
nC
pF
V
GS
= 10 V
-
-
-
V
DD
= 300 V, I
D
= 9.2 A
R
g
= 9.1
,
R
D
= 35.5
,
see fig. 10
b
-
-
-
-
-
-
-
-
530
3.0
9.2
A
37
1.5
800
4.4
V
ns
μC
G
S
T
J
= 25 °C, I
S
= 9.2 A, V
GS
= 0 V
b
T
J
= 25 °C, I
F
= 9.2 A, dI/dt = 100 A/μs
b
-
-
-
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
300 μs; duty cycle
2 %.
c. C
OSS
eff. is a fixed capacitance that gives the same charging time as C
OSS
while V
DS
is rising from 0 to 80% V
DS
.
www.vishay.com
2
Document Number: 90362
S11-1045-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFSL9N60A, SiHFSL9N60A
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.7V
TOP
100
I
D
, Drain-to-Source Current (A)
I
D
, Drain-to-Source Current (A)
10
10
T
J
= 150
°
C
T
J
= 25
°
C
1
1
4.7V
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
0.1
0.1
0.1
4.0
V DS = 50V
20µs PULSE WIDTH
5.0
6.0
7.0
8.0
9.0
10.0
V
DS
, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
V
GS
, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
100
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
, Drain-to-Source Current (A)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.7V
TOP
3.0
I
D
= 9.2A
2.5
2.0
10
1.5
1.0
4.7V
20µs PULSE WIDTH
T
J
= 150
°
C
1
10
100
0.5
1
0.0
-60 -40 -20
V
GS
= 10V
0
20
40
60
80 100 120 140 160
V
DS
, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
T
J
, Junction Temperature (
°
C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 90362
S11-1045-Rev. C, 30-May-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFSL9N60A, SiHFSL9N60A
Vishay Siliconix
2400
2000
C , Capacitance (pF )
C
iss
1600
I
SD
, Reverse Drain Current (A)
V
GS
C
is s
C
rss
C
o ss
=
=
=
=
0V,
f = 1M H z
C
g s
+ C
g d
, C
d s
S H O R TE D
C
gd
C
ds
+ C
gd
100
10
C
oss
1200
T
J
= 150
°
C
800
1
T
J
= 25
°
C
400
C
rss
0
1
10
100
1000
A
0.1
0.2
V
GS
= 0 V
0.5
0.7
1.0
1.2
V
D S
, D rain-to-S ource V olta ge (V )
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
V
SD
,Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20
I
D
= 9.2A
400V
V
DS
= 480V
V
DS
= 300V
V
DS
= 120V
1000
V
GS
, Gate-to-Source Voltage (V)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100
16
I
D
, Drain Current (A)
12
10us
10
100us
1ms
1
10ms
8
4
0
0
10
20
FOR TEST CIRCUIT
SEE FIGURE 13
30
40
50
0.1
T
C
= 25 ° C
T
J
= 150 ° C
Single Pulse
10
100
1000
10000
Q
G
, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
V
DS
, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
www.vishay.com
4
Document Number: 90362
S11-1045-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFSL9N60A, SiHFSL9N60A
Vishay Siliconix
V
DS
10.0
R
D
V
GS
R
g
D.U.T.
+
-
V
DD
8.0
I
D
, Drain Current (A)
10 V
Pulse width
≤
1 µs
Duty factor
≤
0.1 %
6.0
Fig. 10a - Switching Time Test Circuit
4.0
V
DS
2.0
90 %
0.0
25
50
75
100
125
150
T
C
, Case Temperature
( °C)
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
1
Thermal Response (Z
thJC
)
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
P
DM
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.001
0.01
0.1
1
0.01
0.00001
0.0001
t
1
, Rectangular Pulse Duration (sec)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 90362
S11-1045-Rev. C, 30-May-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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