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US3GB

Description
Surface Mount Rectifiers
CategoryDiscrete semiconductor    High efficiency rectifier diode   
File Size163KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
Download Datasheet Parametric Compare View All

US3GB Overview

Surface Mount Rectifiers

US3GB Parametric

Parameter NameAttribute value
Case StyleSMB
Maximum average forward rectified curre3
Maximum recurrent peak reverse voltage400
Peak forward surge curre100
Maximum instantaneous forward voltage1.4
Maximum reverse curre10
TRR(nS)50
classDiodes
US3AB-US3MB
Surface Mount Rectifiers
REVERSE VOLTAGE: 50 - 1000 V
FORWARD CURRENT: 3.0 A
Features
Plastic package has Underwriters Laboratories
vvv vvFlam
mability Classification 94V-0
For surface mount applications
Low profile package
111
Easy pick and place
Ultrafast recovery times for high efficiency
Low forward voltage,low power loss
Built-in strain relief,ideal for autom ated placem ent
High temperature soldering:
250
o
C/10 seconds on terminals
DO-214AA(SMB)
4.7± 0.25
2.0± 0.15
5.4± 0.2
Mechanical Data
111
Case:JEDEC
DO-214AA,molded
plastic body over
passivated chip
Polarity: Color band denotes cathode end
Weight: 0.003 ounces, 0.093 gram
2.3± 0.15
1.3± 0.2
0.203MAX
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
o
Ratings at 25 C ambient tem perature unless otherwise specified
US3AB US3BB US3DB US3GB US3JB US3KB US3MB UNITS
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current at
T
L
=110
O
C
Peak forw ard surge current 8.3ms single half-
sine-w ave superimposed on rated load(JEDEC
Method)
Maximum instantaneous forw ard voltage at 3A
Maximum DC reverse current
at rated DC blockjing voltage
@T
A
=25
o
C
@T
A
=125
o
C
V
RRM
V
RWS
V
DC
I
F(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
θJA
T
J
T
STG
50
35
50
100
70
100
200
140
200
400
280
400
3.0
100.0
600
420
600
800
560
800
1000
700
1000
3.6± 0.3
0.2± 0.05
V
V
V
A
A
1.0
10.0
500
50
70
25
-55--------+150
-55--------+150
1.7
V
μA
Maximum reverse recovery time at I
F
=0.5A
I
R
=1.0A I
rr
=0.25A
Typical junction capacitance at 4.0V,1MH
Z
Maximum thermal resistance (NOTE1)
Operating temperature range
Storage temperature range
75
50
o
ns
pF
C/W
o
o
C
C
NOTE: 1.P.C.B.mounted on 0.2X0.2"(5.0X5.0mm)copper pad area
http://www.luguang.cn
mail:lge@luguang.cn

US3GB Related Products

US3GB US3AB US3BB US3DB US3JB US3MB US3KB
Description Surface Mount Rectifiers Surface Mount Rectifiers Surface Mount Rectifiers Surface Mount Rectifiers Surface Mount Rectifiers Surface Mount Rectifiers Surface Mount Rectifiers
Case Style SMB SMB SMB SMB SMB SMB SMB
Maximum recurrent peak reverse voltage 400 50 100 200 600 1000 800
Maximum instantaneous forward voltage 1.4 1.0 1.0 1.0 1.7 1.7 1.7
TRR(nS) 50 50 50 50 75 75 75
class Diodes Diodes Diodes Diodes Diodes Diodes Diodes
Maximum average forward rectified curre 3 - 3 3 3 3 3
Peak forward surge curre 100 - 100 100 100 100 100
Maximum reverse curre 10 - 10 10 10 10 10
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