STT49GKxxB
Thyristor-Thyristor Modules
Type
V
RSM
V
DSM
V
900
1300
1500
1700
1900
V
RRM
V
DRM
V
800
1200
1400
1600
1800
Tolerance:+0.5mm
-
Dimensions in mm (1mm=0.0394")
STT49GK08B
STT49GK12B
STT49GK14B
STT49GK16B
STT49GK18B
Symbol
I
TRMS
, I
FRMS
T
VJ
=T
VJM
I
TAVM
, I
FAVM
T
C
=85
o
C; 180
o
sine
I
TSM
, I
FSM
T
VJ
=45
o
C
V
R
=0
T
VJ
=T
VJM
V
R
=0
T
VJ
=45
o
C
V
R
=0
T
VJ
=T
VJM
V
R
=0
T
VJ
=T
VJM
f=50Hz, t
p
=200us
V
D
=2/3V
DRM
I
G
=0.45A
di
G
/dt=0.45A/us
Test Conditions
Maxi um Ratings
m
76
49
Unit
A
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
repetitive, I
T
=150A
non repetitive, I
T
=I
TAVM
1150
1230
1000
1070
6600
6280
5000
4750
150
500
1000
10
5
0.5
10
-40...+125
125
-40...+125
A
i
2
dt
A
2
s
(di/dt)
cr
A/us
(dv/dt)
cr
P
GM
P
GAV
V
RGM
T
VJ
T
VJM
T
stg
V
ISOL
M
d
T
VJ
=T
VJM
;
V
DR
=2/3V
DRM
R
GK
= ; method 1 (linear voltage rise)
T
VJ
=T
VJM
I
T
=I
TAVM
t
p
=30us
t
p
=300us
V/us
W
W
V
o
C
50/60Hz, RMS
_
I
ISOL
<1mA
t=1min
t=1s
3000
3600
2.5-4.0/22-35
2.5-4.0/22-35
110
V~
Nm/lb.in.
g
Mounting torque (M5)
Terminal connection torque (M5)
Weight
Typ.
STT49GKxxB
Thyristor-Thyristor Modules
Symbol
V
TM
V
TO
r
T
V
GT
I
GT
V
GD
I
GD
I
L
I
H
t
gd
t
q
Q
S
I
RM
R
thJC
R
thJK
d
S
d
A
a
per thyristor/diode; DC current
per module
per thyristor/diode; DC current
per module
Creeping distance on surface
Strike distance through air
Maximum allowable acceleration
T
VJ
=25
o
C; t
p
=10us; V
D
=6V
I
G
=0.45A; di
G
/dt=0.45A/us
T
VJ
=25
o
C; V
D
=6V; R
GK
=
T
VJ
=25
o
C; V
D
=1/2V
DRM
I
G
=0.45A; di
G
/dt=0.45A/us
T
VJ
=T
VJM
; I
T
=120A; t
p
=200us; -di/dt=10A/us
V
R
=100V; dv/dt=20V/us; V
D
=2/3V
DRM
T
VJ
=T
VJM
; I
T
, I
F
=50A; -di/dt=0.64A/us
typ.
V
D
=6V;
V
D
=6V;
T
VJ
=T
VJM
;
T
VJ
=25
o
C
T
VJ
=-40
o
C
T
VJ
=25
o
C
T
VJ
=-40
o
C
V
D
=2/3V
DRM
I
TM
=147A; T
VJ
=25
o
C
For power-loss calculations only (T
VJ
=125
o
C)
Test Conditions
Characteristic Values
5
1.65
0.85
5.3
1.5
max
1.6
max
100
200
0.2
10
450
200
2
150
90
11
0.53
0.265
0.73
0.365
12.7
9.6
50
Unit
mA
V
V
m
V
mA
V
mA
mA
mA
us
us
uC
A
K/W
K/W
mm
mm
m/s
2
I
RRM
, I
DRM
T
VJ
=T
VJM
; V
R
=V
RRM
; V
D
=V
DRM
FEATURES
* International standard package
* Copper base plate
* Glass passivated chips
* Isolation voltage 3600 V~
* UL file NO.310749
* RoHs compliant
APPLICATIONS
* DC motor control
* Softstart AC motor controller
* Light, heat and temperature
control
ADVANTAGES
* Space and weight savings
* Simple mounting with two screws
* Improved temperature and power
cycling
* Reduced protection circuits
STT49GKxxB
Thyristor-Thyristor Modules
100
W
75
90
60
1/2
1/2
.
STT49B
.
STD49B
120
100
rec.
sin. 180
180
1.2
1.4
1. 6
1. 8
1
0.8
0.6
R
th(j-a)
W
75
cont.
2
50
r ec.
15
30
50
2.5
3
3.5
4
5
6
8
K/W
25
P
TAV
0
25
P
TAV
0
0 I
TAV
10
20
30
40
Fig.1L Power dissipation per thyristor vs. on-state current
50
A
60
0
T
a
50
100
O
C
150
Fig.1R Power dissipation per thyristor vs. ambient temp
200
W
1
.
STT49B
1
.
STD49B
200
W
0.3 0.2
0.4
0.1
R
th(c-a)
T
c
66
76
150
150
0.5
0.6
0.7
100
100
0.8
1
1.2
1.5
86
96
106
O
50
Pvtot
0
50
Pvtot
0 I
RM
20
2
3
4
K/W
C
116
40
60
80
100
A
120
0
0
Fig.2L Power dissipation per module vs. rms current
T
a
50
100
O
C
150
Fig.2R Power dissipation per module vs. case temp
400
W
300
2
.
STT49B
2
.
STD49B
R
400
W
300
0. 5
1
0.2
0.25
0.3
0.35
0.4
0. 5
0.6
0.75
1
1.25
1.5
2
K/W
0.1
. 0.05
R
th(c-a)
T
c
56
66
76
86
96
106
116
200
L
200
100
Pvtot
0
0
I
D
100
Pvtot
O
20
40
60
80
100
A
120
0
C
0
T
a
50
100
O
Fig.3L Power dissipation of two modules vs. direct current
C
150
Fig
.3R Power dissipation of two modules vs. case temp
STT49GKxxB
Thyristor-Thyristor Modules
500
W
400
3
.
STT49B
3
.
STD49B
500
W
400
w
3
. 0.1 0.08 0.06 0.04
0 .16
0 .18
0.2
0.25
0.3
0.4
0.5
0.6
0.8
1
1.5
R
th(c-a)
64
T
c
74
84
94
104
114
O
300
B
6
300
0.35
200
200
100
Pvtot
0
0 I
D
I
RMS
100
Pvtot
K/W
0
124
C
50
100
A
150
0
T
a
50
100
O
Fig.4L Power dissipation of three modules vs. direct and rms current
Fig.4R Power dissipation of three modules vs. case temp
C
150
1000
uC
1/2
1/2
.
STT49B
.
STD49B
1.2
K/W
I
TM=
100A
50A
20A
10A
5A
5
0.8
1/2
1/2
.
STT49B
.
STD49B
Zth(j-s)
Zth(j-c)
100
0.4
Qrr
10
0
Tvj=125 C
o
Zth
0
0.001
t
0.01
0.1
1
10
s 100
-di
T
/dt
10
A/us 100
Fig.5 Recovered charge vs. current decrease
Fig.6 Transient thermal impedance vs. time
250
A
1/2
1/2
.
STT49B
200
.
STD49B
typ.
max.
2
I
T(OV)
I
TSM
1.6
1.4
1.2
1/2
1/2
.
STT 49B
.
STD 49B
I
TSM(25 C) =1000A
I
TSM(125 C)=850A
O
O
150
100
1
0.8
_
.
0.5
.
V
1
.
V
0 V
RRM
RRM
RRM
50
I
T
0
0
Vt 0.5
1
1.5
Tvj=25
O
C
O
－ －
Tvj=125 C
2
V 2.5
0.6
0.4
Fig.7 On-state charactristics
1
Fig.8 Surge overload current vs. time
t
10
100
ms 1000
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