AT26DF081A_13 datasheet, PDF - EEWORLD Datasheet

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AT26DF081A_13: Description8M X 1 FLASH 2.7V PROM, PDSO8; Categorystorage; File Size629KB，40 Pages; ManufacturerETC2

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AT26DF081A_13 Overview

8M X 1 FLASH 2.7V PROM, PDSO8

AT26DF081A_13 Parametric

Parameter Name	Attribute value
Number of functions	1
Number of terminals	8
Maximum operating temperature	85 Cel
Minimum operating temperature	-40 Cel
Maximum supply/operating voltage	3.6 V
Minimum supply/operating voltage	2.7 V
Rated supply voltage	3 V
maximum clock frequency	70 MHz
Processing package description	0.150 INCH, Green, Plastic, MS-012AA, SOIC-8
Lead-free	Yes
EU RoHS regulations	Yes
state	DISCONTINUED
packaging shape	Rectangle
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
Terminal spacing	1.27 mm
terminal coating	MATTE Tin
Terminal location	pair
Packaging Materials	Plastic/Epoxy
Temperature level	INDUSTRIAL
memory width	1
organize	8M × 1
storage density	8.39E6 deg
operating mode	Synchronize
Number of digits	8.39E6 words
Number of digits	8M
Memory IC type	FLASH 2.7V programmable read-only memory
serial parallel	serial

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Features

•

Single 2.7V - 3.6V Supply

•

Serial Peripheral Interface (SPI) Compatible

•

– Supports SPI Modes 0 and 3

70 MHz Maximum Clock Frequency

Flexible, Uniform Erase Architecture

– 4-Kbyte Blocks

– 32-Kbyte Blocks

– 64-Kbyte Blocks

– Full Chip Erase

Individual Sector Protection with Global Protect/Unprotect Feature

– One 32-Kbyte Top Boot Sector

– Two 8-Kbyte Sectors

– One 16-Kbyte Sector

– Fifteen 64-Kbyte Sectors

Hardware Controlled Locking of Protected Sectors

Flexible Programming Options

– Byte/Page Program (1 to 256 Bytes)

– Sequential Program Mode Capability

Automatic Checking and Reporting of Erase/Program Failures

JEDEC Standard Manufacturer and Device ID Read Methodology

Low Power Dissipation

– 5 mA Active Read Current (Typical)

– 25

μA

Deep Power-down Current (Typical)

Endurance: 100,000 Program/Erase Cycles

Data Retention: 20 Years

Complies with Full Industrial Temperature Range

Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options

– 8-lead SOIC (150-mil and 200-mil wide)

•

8-megabit

2.7-volt

Minimum

SPI Serial Flash

Memory

AT26DF081A

(Not Recommended

for New Designs)

•

1. Description

The AT26DF081A is a serial interface Flash memory device designed for use in a

wide variety of high-volume consumer-based applications in which program code is

shadowed from Flash memory into embedded or external RAM for execution. The

flexible erase architecture of the AT26DF081A, with its eras\e granularity as small as

4 Kbytes, makes it ideal for data storage as well, eliminating the need for additional

data storage EEPROM devices.

The physical sectoring and the erase block sizes of the AT26DF081A have been opti-

mized to meet the needs of today’s code and data storage applications. By optimizing

the size of the physical sectors and erase blocks, the memory space can be used

much more efficiently. Because certain code modules and data storage segments

must reside by themselves in their own protected sectors, the wasted and unused

memory space that occurs with large sectored and large block erase Flash memory

devices can be greatly reduced. This increased memory space efficiency allows addi-

tional code routines and data storage segments to be added while still maintaining the

same overall device density.

3600I–DFLASH–5/2013

AT26DF081A

2. Pin Descriptions and Pinouts

Table 2-1.

Symbol

Pin Descriptions

Name and Function

CHIP SELECT: Asserting the CS pin selects the device. When the CS pin is deasserted, the

device will be deselected and normally be placed in standby mode (not Deep Power-down mode),

and the SO pin will be in a high-impedance state. When the device is deselected, data will not be

accepted on the SI pin.

A high-to-low transition on the CS pin is required to start an operation, and a low-to-high transition

is required to end an operation. When ending an internally self-timed operation such as a program

or erase cycle, the device will not enter the standby mode until the completion of the operation.

SERIAL CLOCK: This pin is used to provide a clock to the device and is used to control the flow of

data to and from the device. Command, address, and input data present on the SI pin is always

latched on the rising edge of SCK, while output data on the SO pin is always clocked out on the

falling edge of SCK.

SERIAL INPUT: The SI pin is used to shift data into the device. The SI pin is used for all data input

including command and address sequences. Data on the SI pin is always latched on the rising

edge of SCK.

SERIAL OUTPUT: The SO pin is used to shift data out from the device. Data on the SO pin is

always clocked out on the falling edge of SCK.

WRITE PROTECT: The WP pin controls the hardware locking feature of the device. Please refer to

section

“Protection Commands and Features” on page 15

for more details on protection features

and the WP pin.

The WP pin is internally pulled-high and may be left floating if hardware-controlled protection will

not be used. However, it is recommended that the WP pin also be externally connected to V

whenever possible.

HOLD: The HOLD pin is used to temporarily pause serial communication without deselecting or

resetting the device. While the HOLD pin is asserted, transitions on the SCK pin and data on the

SI pin will be ignored, and the SO pin will be in a high-impedance state.

The CS pin must be asserted, and the SCK pin must be in the low state in order for a Hold

condition to start. A Hold condition pauses serial communication only and does not have an effect

on internally self-timed operations such as a program or erase cycle. Please refer to section

“Hold”

on page 30

for additional details on the Hold operation.

The HOLD pin is internally pulled-high and may be left floating if the Hold function will not be used.

However, it is recommended that the HOLD pin also be externally connected to V

whenever

possible.

DEVICE POWER SUPPLY: The V

pin is used to supply the source voltage to the device.

Operations at invalid V

voltages may produce spurious results and should not be attempted.

GROUND: The ground reference for the power supply. GND should be connected to the

system ground.

Asserted

State

Type

Low

Input

SCK

Input

Output

Low

Input

HOLD

Low

Input

GND

Power

3600I–DFLASH–5/2013

AT26DF081A_13 Related Products

	AT26DF081A_13	AT26DF081A-SSU	AT26DF081A-SU
Description	8M X 1 FLASH 2.7V PROM, PDSO8	8M X 1 FLASH 2.7V PROM, PDSO8	8M X 1 FLASH 2.7V PROM, PDSO8
Number of functions	1	1	1
Number of terminals	8	8	8
Maximum operating temperature	85 Cel	85 Cel	85 Cel
Minimum operating temperature	-40 Cel	-40 Cel	-40 Cel
Maximum supply/operating voltage	3.6 V	3.6 V	3.6 V
Minimum supply/operating voltage	2.7 V	2.7 V	2.7 V
Rated supply voltage	3 V	3 V	3 V
maximum clock frequency	70 MHz	70 MHz	70 MHz
Processing package description	0.150 INCH, Green, Plastic, MS-012AA, SOIC-8	0.150 INCH, Green, Plastic, MS-012AA, SOIC-8	0.209 INCH, Green, EIAJ, Plastic, SOIC-8
Lead-free	Yes	Yes	Yes
EU RoHS regulations	Yes	Yes	Yes
state	DISCONTINUED	DISCONTINUED	DISCONTINUED
packaging shape	Rectangle	Rectangle	Rectangle
Package Size	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
surface mount	Yes	Yes	Yes
Terminal form	GULL WING	GULL WING	GULL WING
Terminal spacing	1.27 mm	1.27 mm	1.27 mm
terminal coating	MATTE Tin	MATTE Tin	MATTE Tin
Terminal location	pair	pair	pair
Packaging Materials	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy
Temperature level	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
memory width	1	1	1
organize	8M × 1	8M × 1	8M × 1
storage density	8.39E6 deg	8.39E6 deg	8.39E6 deg
operating mode	Synchronize	Synchronize	Synchronize
Memory IC type	FLASH 2.7V programmable read-only memory	FLASH 2.7V programmable read-only memory	FLASH 2.7V programmable read-only memory
serial parallel	serial	serial	serial
Number of digits	8M	8M	8M

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