SSPS7100N
Elektronische Bauelemente
6.2 A , 100 V, R
DS(ON)
62 m
N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs
utilize a high cell density trench process to provide
low R
DS(on)
and to ensure minimal power loss and
heat dissipation. Typical applications are
DFN3x3-8PP
B
D
C
FEATURES
θ
e
E
Low R
DS(on)
provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
DFN3x3-8PP saves board space
Fast switching speed
High performance trench technology
A
d
b
g
APPLICATION
DC-DC converters and power management in
portable and battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless telephones.
F
G
PACKAGE INFORMATION
Package
DFN3x3-8PP
MPQ
3K
Leader Size
13 inch
Top View
REF.
A
B
C
D
E
F
G
Millimeter
Min.
Max.
0.70
0.90
3.00BSC
0.10
0.25
1.80
2.3
3.2BSC
0.01
0.02
2.35BSC
REF.
θ
b
d
e
g
Millimeter
Min.
Max.
0
°
12
°
0.20
0.40
0.65BSC
3.00BSC
0.70(TYP.)
MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
1
Pulsed Drain Current
2
Continuous Source Current (Diode Conduction)
Total Power Dissipation
1
Operating Junction & Storage Temperature Range
1
Symbol
V
DS
V
GS
T
A
=25°C
T
A
=70°C
I
D
I
DM
I
S
T
A
=25°C
T
A
=70°C
P
D
T
J
, T
STG
Ratings
100
±20
6.2
4.6
50
5
3.5
2
-55~150
Unit
V
V
A
A
A
A
W
W
°C
Thermal Resistance Ratings
Thermal Resistance Junction-Ambient (Max.)
1
Notes:
1.
Surface Mounted on 1” x 1” FR4 Board.
2.
Pulse width limited by maximum junction temperature.
t
≦
10 sec
Steady State
R
θJA
35
81
°C / W
°C / W
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
11-Dec-2013 Rev. B
Page 1 of 4
SSPS7100N
Elektronische Bauelemente
6.2 A , 100 V, R
DS(ON)
62 m
N-Ch Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Static
Gate-Threshold Voltage
Gate-Body Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
1
Drain-Source On-Resistance
Forward Transconductance
1
Diode Forward Voltage
1
Max.
Unit
Teat Conditions
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(ON)
g
fs
V
SD
1
-
-
-
3.1
-
-
-
-
-
-
-
-
-
-
-
10
0.73
-
±10
1
5
-
62
72
-
-
V
μA
μA
A
mΩ
S
V
V
DS
=V
GS
, I
D
=250μA
V
DS
=0, V
GS
= ±20V
V
DS
=80V, V
GS
=0
V
DS
=80V, V
GS
=0, T
J
=55°C
V
DS
=5V, V
GS
=10V
V
GS
=10V, I
D
=5A
V
GS
=4.5V, I
D
=4.9A
V
DS
=15V, I
D
=5A
I
S
=2.5A, V
GS
=0
Dynamic
2
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
T
d(on)
T
r
T
d(off)
T
f
-
-
-
-
-
-
-
-
-
-
12
4.1
6.2
1098
120
76
7
11
54
26
-
-
-
-
-
-
-
-
-
-
nS
pF
nC
V
DS
=50V,
V
GS
=4.5V,
I
D
=5A
V
DS
=15V,
V
GS
=0
f=1MHz
V
DD
=50V
I
D
=5A
V
GEN
=10V
R
L
=10Ω
R
GEN
=6Ω
Notes:
1.
Pulse test：PW
≦
300μs duty cycle
≦
2%.
2.
Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
11-Dec-2013 Rev. B
Page 2 of 4
SSPS7100N
Elektronische Bauelemente
6.2 A , 100 V, R
DS(ON)
62 m
N-Ch Enhancement Mode Power MOSFET
Typical Electrical Characteristics
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
11-Dec-2013 Rev. B
Page 3 of 4
SSPS7100N
Elektronische Bauelemente
6.2 A , 100 V, R
DS(ON)
62 m
N-Ch Enhancement Mode Power MOSFET
Typical Electrical Characteristics
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
11-Dec-2013 Rev. B
Page 4 of 4
PCB Design
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