2N6057 datasheet, PDF - EEWORLD Datasheet

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2N6057: Description12A, 60V, NPN, Si, POWER TRANSISTOR, TO-204AA, METAL, TO-3, 2 PIN; CategoryDiscrete semiconductor The transistor; File Size439KB，61 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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2N6057 Overview

12A, 60V, NPN, Si, POWER TRANSISTOR, TO-204AA, METAL, TO-3, 2 PIN

2N6057 Parametric

Parameter Name	Attribute value
Parts packaging code	TO-3
package instruction	METAL, TO-3, 2 PIN
Contacts	2
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	12 A
Collector-emitter maximum voltage	60 V
Configuration	DARLINGTON
Minimum DC current gain (hFE)	750
JEDEC-95 code	TO-3
JESD-30 code	O-MBFM-P2
Number of components	1
Number of terminals	2
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Maximum power consumption environment	150 W
Maximum power dissipation(Abs)	150 W
Certification status	Not Qualified
surface mount	NO
Terminal form	PIN/PEG
Terminal location	BOTTOM
Transistor component materials	SILICON
Nominal transition frequency (fT)	2 MHz
VCEsat-Max	2 V
Base Number Matches	1

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Darlington Complementary

Silicon Power Transistors

. . . designed for general–purpose amplifier and low frequency switching applications.

•

High DC Current Gain —

hFE = 3500 (Typ) @ IC = 5.0 Adc

•

Collector–Emitter Sustaining Voltage — @ 100 mA

VCEO(sus) = 60 Vdc (Min) — 2N6050, 2N6057

VCEO(sus) =

80 Vdc (Min) — 2N6051, 2N6058

VCEO(sus) =

100 Vdc (Min) — 2N6052, 2N6059

•

Monolithic Construction with Built–In Base–Emitter Shunt Resistors

2N6050

thru

2N6052*

NPN

2N6057

thru

2N6059

*Motorola Preferred Device

PNP

PD, POWER DISSIPATION (WATTS)

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MAXIMUM RATINGS (1)

Rating

Symbol

VCEO

VCB

VEB

2N6050

2N6057

2N6051

2N6058

2N6052

2N6059

100

Unit

Vdc

Adc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base voltage

5.0

Collector Current — Continuous

Peak

Base Current

0.2

Total Device Dissipation

@TC = 25

Derate above 25

150

Watts

0.857

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 65 to + 200

DARLINGTON

12 AMPERE

COMPLEMENTARY

SILICON

POWER TRANSISTORS

60 – 80 – 100 VOLTS

150 WATTS

THERMAL CHARACTERISTICS

Characteristic

Symbol

θJC

Rating

1.17

Unit

CASE 1–07

TO–204AA

(TO–3)

Thermal Resistance, Junction to Case

C/W

(1) Indicates JEDEC Registered Data.

160

140

120

100

125

150

TC, CASE TEMPERATURE (°C)

175

200

Figure 1. Power Derating

Preferred

devices are Motorola recommended choices for future use and best overall value.

REV 1

Motorola Bipolar Power Transistor Device Data

3–93

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