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BFP183W_07

Description
NPN Silicon RF Transistor
File Size78KB,7 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet View All

BFP183W_07 Overview

NPN Silicon RF Transistor

BFP183W
NPN Silicon RF Transistor*
For low noise, high-gain broadband amplifiers at
collector currents from 2 mA to 30 mA
f
T
= 8 GHz,
F
= 0.9 dB at 900 MHz
Pb-free (RoHS compliant) package
1)
Qualified according AEC Q101
* Short term description
3
4
1
2
ESD
(Electrostatic
discharge)
sensitive device, observe handling precaution!
Type
BFP183W
Maximum Ratings
Parameter
Marking
RHs
1=E
Pin Configuration
2=C
3=E
4=B
Symbol
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
j
T
A
T
stg
Symbol
R
thJS
Package
-
SOT343
Value
12
20
20
2
65
5
450
150
-65 ... 150
-65 ... 150
Value
205
Unit
K/W
mW
°C
mA
Unit
V
-
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
2)
T
S
58 °C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
3)
1
Pb-containing
2
T
3
For
package may be available upon special request
S
is measured on the collector lead at the soldering point to the pcb
calculation of
R
thJA
please refer to Application Note Thermal Resistance
2007-04-20
1
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