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MQSAC26

Description
Trans Voltage Suppressor Diode, 500W, 26V V(RWM), Unidirectional, 1 Element, Silicon, DO-41, PLASTIC PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size275KB,4 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

MQSAC26 Overview

Trans Voltage Suppressor Diode, 500W, 26V V(RWM), Unidirectional, 1 Element, Silicon, DO-41, PLASTIC PACKAGE-2

MQSAC26 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMicrosemi
Parts packaging codeDO-41
package instructionPLASTIC PACKAGE-2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Minimum breakdown voltage28.9 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-41
JESD-30 codeO-PALF-W2
JESD-609 codee0
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation500 W
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation2.5 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage26 V
surface mountNO
technologyAVALANCHE
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
SAC5.0 thru SAC50
500 WATT LOW CAPACITANCE
TRANSIENT VOLTAGE SUPPRESSOR
SCOTTSDALE DIVISION
DESCRIPTION
This SAC5.0 thru SAC50 transient voltage suppressor (TVS) series rated at
500 watts provides an added rectifier element as shown in Figure 4 to
achieve low capacitance in applications for higher speed data or signal
lines. The low capacitance rating of 30 pF may be used for protecting
higher frequency applications in inductive switching environments or
electrical systems involving secondary lightning effects per IEC61000-4-5
as well as RTCA/DO-160D or ARINC 429 for airborne avionics.
If
bidirectional protection is needed, two SAC devices in anti-parallel
configuration are required as shown in Figure 6. With their very fast
response time, they also provide ESD and EFT protection per IEC61000-4-
2 and IEC61000-4-4 respectively.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPEARANCE
DO-41
WWW .
Microsemi
.C
OM
FEATURES
Unidirectional low-capacitance TVS series for
flexible thru-hole mounting (for bidirectional see
Figure 4)
Suppresses transient up to 500 Watts Peak Pulse
Power @ 10/1000 µs
Improved performance in low capacitance of 30 pF
Economical plastic series in flexible axial-leaded
DO-41 package
Options for screening in accordance with MIL-PRF-
19500 for JAN, JANTX, JANTXV, and JANS are
also available by adding MQ, MX, MV, or MSP
prefixes respectively to part number, e.g.
MXSAC5.0, MVSAC18, etc.
Also available in surface mount with SMAJ or
SMBJ prefix for part numbers (ex. SMAJSAC5.0)
UL94V-0 Flammability Classification
APPLICATIONS / BENEFITS
Low Capacitance for data-line protection to 70 MHz
ESD and EFT protection per IEC61000-4-2 and
IEC61000-4-4 respectively
Secondary lightning protection per IEC61000-4-5 with
42 Ohms source impedance:
Class 1: SAC5.0 to SAC50
Class 2: SAC5.0 to SAC45
Class 3: SAC5.0 to SAC22
Class 4: SAC5.0 to SAC10
Secondary lightning protection per IEC61000-4-5 with
12 Ohms source impedance
Class 1: SAC5.0 to SAC26
Class 2: SAC5.0 to SAC15
Class 3: SAC5.0 to SAC7.0
MAXIMUM RATINGS
Peak Pulse Power Dissipation at 25 C: 500 Watts @
10/1000
µs
with repetition rate of 0.01% or less*
o
Steady State Power Dissipation* at T
L
= +75 C: 2.5 Watts
(Lead Length = 3/8”).
Clamping Speed (0 volts to V
(BR)
Min.) less than 5
nanoseconds.
Operating and Storage Temperature: -65 C to +150 C.
o
o
o
MECHANICAL AND PACKAGING
CASE: Void Free Transfer Molded Thermosetting Plastic
(DO-41) meeting UL94V-0
TERMINATIONS: Tin-lead plated and solderable per MIL-
STD-750 method 2026
POLARITY: Cathode indicated by band
MARKING: Part number and cathode band
WEIGHT: 0.7 Grams (Approx.)
See package dimensions on last page
SAC5.0 thru SAC50
*
TVS devices are not typically used for dc power dissipation and are instead operated < V
WM
(rated standoff voltage) except for transients that briefly
drive the device into avalanche breakdown (V
BR
to V
C
region) of the TVS element. Also see Figures 5 and 6 for further protection details in rated peak
pulse power for unidirectional and bidirectional configurations respectively.
Copyright
2004
4-26-2004 REV B
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
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