K7N801845A-HC10T datasheet, PDF

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K7N801845A-HC10T: DescriptionZBT SRAM, 512KX18, 5ns, CMOS, PBGA119; Categorystorage storage; File Size458KB，20 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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K7N801845A-HC10T Overview

ZBT SRAM, 512KX18, 5ns, CMOS, PBGA119

K7N801845A-HC10T Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	SAMSUNG
package instruction	BGA, BGA119,7X17,50
Reach Compliance Code	unknown
Maximum access time	5 ns
Maximum clock frequency (fCLK)	100 MHz
I/O type	COMMON
JESD-30 code	R-PBGA-B119
JESD-609 code	e0
memory density	9437184 bit
Memory IC Type	ZBT SRAM
memory width	18
Humidity sensitivity level	3
Number of terminals	119
word count	524288 words
character code	512000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	512KX18
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	BGA
Encapsulate equivalent code	BGA119,7X17,50
Package shape	RECTANGULAR
Package form	GRID ARRAY
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
power supply	2.5 V
Certification status	Not Qualified
Maximum standby current	0.01 A
Minimum standby current	2.38 V
Maximum slew rate	0.3 mA
Nominal supply voltage (Vsup)	2.5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	BALL
Terminal pitch	1.27 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	40

K7N801845A-HC10T Related Products

	K7N801845A-HC10T	K7N801845A-HC15T	K7N803645A-HC15T	K7N801845A-HC16T
Description	ZBT SRAM, 512KX18, 5ns, CMOS, PBGA119	ZBT SRAM, 512KX18, 3.8ns, CMOS, PBGA119	ZBT SRAM, 256KX36, 3.8ns, CMOS, PBGA119	ZBT SRAM, 512KX18, 3.5ns, CMOS, PBGA119
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
Maker	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG
package instruction	BGA, BGA119,7X17,50	BGA, BGA119,7X17,50	BGA, BGA119,7X17,50	BGA, BGA119,7X17,50
Reach Compliance Code	unknown	unknown	unknown	unknown
Maximum access time	5 ns	3.8 ns	3.8 ns	3.5 ns
Maximum clock frequency (fCLK)	100 MHz	149 MHz	149 MHz	166 MHz
I/O type	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-PBGA-B119	R-PBGA-B119	R-PBGA-B119	R-PBGA-B119
JESD-609 code	e0	e0	e0	e0
memory density	9437184 bit	9437184 bit	9437184 bit	9437184 bit
Memory IC Type	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM
memory width	18	18	36	18
Humidity sensitivity level	3	3	3	3
Number of terminals	119	119	119	119
word count	524288 words	524288 words	262144 words	524288 words
character code	512000	512000	256000	512000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C
organize	512KX18	512KX18	256KX36	512KX18
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	BGA	BGA	BGA	BGA
Encapsulate equivalent code	BGA119,7X17,50	BGA119,7X17,50	BGA119,7X17,50	BGA119,7X17,50
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY	GRID ARRAY	GRID ARRAY	GRID ARRAY
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	260	260	260	260
power supply	2.5 V	2.5 V	2.5 V	2.5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum standby current	0.01 A	0.01 A	0.01 A	0.01 A
Minimum standby current	2.38 V	2.38 V	2.38 V	2.38 V
Maximum slew rate	0.3 mA	0.35 mA	0.35 mA	0.37 mA
Nominal supply voltage (Vsup)	2.5 V	2.5 V	2.5 V	2.5 V
surface mount	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	BALL	BALL	BALL	BALL
Terminal pitch	1.27 mm	1.27 mm	1.27 mm	1.27 mm
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	40	40	40	40

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