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TIP42B

Description
TRANSISTOR,BJT,PNP,60V V(BR)CEO,6A I(C),TO-220AB
CategoryDiscrete semiconductor    The transistor   
File Size98KB,4 Pages
ManufacturerCOMSET
Websitehttp://comset.halfin.com/
Environmental Compliance
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TIP42B Overview

TRANSISTOR,BJT,PNP,60V V(BR)CEO,6A I(C),TO-220AB

TIP42B Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerCOMSET
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknow
Shell connectionCOLLECTOR
Maximum collector current (IC)6 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)15
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typePNP
Maximum power consumption environment2 W
Maximum power dissipation(Abs)65 W
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)3 MHz
VCEsat-Max1.5 V

TIP42B Related Products

TIP42B TIP42A TIP42 TIP42C
Description TRANSISTOR,BJT,PNP,60V V(BR)CEO,6A I(C),TO-220AB TRANSISTOR,BJT,PNP,60V V(BR)CEO,6A I(C),TO-220AB POWER TRANSISTOR POWER TRANSISTOR
Maximum operating temperature 150 °C 150 Cel 150 °C 150 °C
surface mount NO NO NO NO
Is it Rohs certified? conform to - conform to conform to
Maker COMSET - COMSET COMSET
package instruction FLANGE MOUNT, R-PSFM-T3 - TO-220, 3 PIN FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknow - unknow unknow
Shell connection COLLECTOR - COLLECTOR COLLECTOR
Maximum collector current (IC) 6 A - 6 A 6 A
Collector-emitter maximum voltage 80 V - 40 V 100 V
Configuration SINGLE - SINGLE SINGLE
Minimum DC current gain (hFE) 15 - 15 15
JEDEC-95 code TO-220AB - TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 - R-PSFM-T3 R-PSFM-T3
Number of components 1 - 1 1
Number of terminals 3 - 3 3
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT - FLANGE MOUNT FLANGE MOUNT
Polarity/channel type PNP - PNP PNP
Maximum power consumption environment 2 W - 2 W 2 W
Maximum power dissipation(Abs) 65 W - 65 W 65 W
Terminal form THROUGH-HOLE - THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE - SINGLE SINGLE
transistor applications SWITCHING - SWITCHING SWITCHING
Transistor component materials SILICON - SILICON SILICON
Nominal transition frequency (fT) 3 MHz - 3 MHz 3 MHz
VCEsat-Max 1.5 V - 1.5 V 1.5 V

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