IRHLF740Z4PBF datasheet, PDF - EEWORLD Datasheet

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IRHLF740Z4PBF: DescriptionSmall Signal Field-Effect Transistor, 1.6A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, MODIFIED TO-39, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size150KB，8 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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IRHLF740Z4PBF Overview

Small Signal Field-Effect Transistor, 1.6A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, MODIFIED TO-39, 3 PIN

IRHLF740Z4PBF Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Infineon
package instruction	HERMETIC SEALED, MODIFIED TO-39, 3 PIN
Reach Compliance Code	compliant
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (ID)	1.6 A
Maximum drain-source on-resistance	0.5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-205AF
JESD-30 code	O-MBCY-W3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

IRHLF740Z4PBF Related Products

	IRHLF740Z4PBF	IRHLF780Z4PBF
Description	Small Signal Field-Effect Transistor, 1.6A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, MODIFIED TO-39, 3 PIN	Small Signal Field-Effect Transistor, 1.6A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, MODIFIED TO-39, 3 PIN
Is it Rohs certified?	conform to	conform to
Maker	Infineon	Infineon
package instruction	HERMETIC SEALED, MODIFIED TO-39, 3 PIN	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	compliant	compliant
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V	60 V
Maximum drain current (ID)	1.6 A	1.6 A
Maximum drain-source on-resistance	0.5 Ω	0.5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-205AF	TO-205AF
JESD-30 code	O-MBCY-W3	O-MBCY-W3
Number of components	1	1
Number of terminals	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Package body material	METAL	METAL
Package shape	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL
surface mount	NO	NO
Terminal form	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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