Small Signal Field-Effect Transistor, 1.6A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, MODIFIED TO-39, 3 PIN
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| Maker | Infineon |
| package instruction | CYLINDRICAL, O-MBCY-W3 |
| Reach Compliance Code | compliant |
| Is Samacsys | N |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 60 V |
| Maximum drain current (ID) | 1.6 A |
| Maximum drain-source on-resistance | 0.5 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-205AF |
| JESD-30 code | O-MBCY-W3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | CYLINDRICAL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| surface mount | NO |
| Terminal form | WIRE |
| Terminal location | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
| IRHLF780Z4PBF | IRHLF740Z4PBF | |
|---|---|---|
| Description | Small Signal Field-Effect Transistor, 1.6A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, MODIFIED TO-39, 3 PIN | Small Signal Field-Effect Transistor, 1.6A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, MODIFIED TO-39, 3 PIN |
| Is it Rohs certified? | conform to | conform to |
| Maker | Infineon | Infineon |
| package instruction | CYLINDRICAL, O-MBCY-W3 | HERMETIC SEALED, MODIFIED TO-39, 3 PIN |
| Reach Compliance Code | compliant | compliant |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 60 V | 60 V |
| Maximum drain current (ID) | 1.6 A | 1.6 A |
| Maximum drain-source on-resistance | 0.5 Ω | 0.5 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-205AF | TO-205AF |
| JESD-30 code | O-MBCY-W3 | O-MBCY-W3 |
| Number of components | 1 | 1 |
| Number of terminals | 3 | 3 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C | 150 °C |
| Package body material | METAL | METAL |
| Package shape | ROUND | ROUND |
| Package form | CYLINDRICAL | CYLINDRICAL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL | N-CHANNEL |
| surface mount | NO | NO |
| Terminal form | WIRE | WIRE |
| Terminal location | BOTTOM | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED |
| transistor applications | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON |
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