EV1277 datasheet, PDF - EEWORLD Datasheet

EV1277: DescriptionPower Bipolar Transistor, 30A I(C), 1000V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 6 Pin; CategoryDiscrete semiconductor The transistor; File Size39KB，1 Pages; ManufacturerFuji Electric Co., Ltd.

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EV1277 Overview

Power Bipolar Transistor, 30A I(C), 1000V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 6 Pin

Parameter Name	Attribute value
Maker	Fuji Electric Co., Ltd.
package instruction	FLANGE MOUNT, R-PUFM-X6
Reach Compliance Code	unknown
Maximum collector current (IC)	30 A
Collector-emitter maximum voltage	1000 V
Configuration	COMPLEX
Minimum DC current gain (hFE)	100
Maximum landing time (tf)	2000 ns
JESD-30 code	R-PUFM-X6
Number of components	2
Number of terminals	6
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Maximum power dissipation(Abs)	300 W
Certification status	Not Qualified
Maximum rise time (tr)	3000 ns
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UPPER
transistor applications	SWITCHING
Transistor component materials	SILICON

This Material Copyrighted By Its Respective Manufacturer

	EV1277	2DI30D-100	2DI100D-100	2DI150D-100	SL3-105-SH216/01-66	SP2-048-H22/0-96/11C	EV1234	EV1255	EV1274
Description	Power Bipolar Transistor, 30A I(C), 1000V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 6 Pin	Power Bipolar Transistor, 30A I(C), 1000V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 7 Pin	Power Bipolar Transistor, 100A I(C), 1000V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 11 Pin	Power Bipolar Transistor, 150A I(C), 1000V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 11 Pin	Board Connector, 105 Contact(s), 3 Row(s), Male, Straight, 0.1 inch Pitch, Wire Wrap Terminal, Locking, Black Insulator, Receptacle	Board Connector, 48 Contact(s), 2 Row(s), Male, Straight, 0.05 inch Pitch, Surface Mount Terminal, Locking, Black Insulator, Receptacle	Power Bipolar Transistor, 50A I(C), 2-Element	Power Bipolar Transistor, 100A I(C), 2-Element	Power Bipolar Transistor, 20A I(C), 1-Element
Reach Compliance Code	unknown	unknow	unknow	unknow	compliant	compliant	unknown	unknown	unknown
Maximum collector current (IC)	30 A	30 A	100 A	150 A	-	-	50 A	100 A	20 A
Minimum DC current gain (hFE)	100	100	100	100	-	-	100	200	100
Maximum landing time (tf)	2000 ns	3000 ns	3000 ns	3000 ns	-	-	2000 ns	2000 ns	2000 ns
Number of components	2	2	2	2	-	-	2	2	1
Maximum power dissipation(Abs)	300 W	300 W	800 W	1000 W	-	-	500 W	800 W	200 W
Maximum rise time (tr)	3000 ns	2500 ns	2500 ns	2500 ns	-	-	3000 ns	3000 ns	3000 ns
Base Number Matches	-	1	1	1	-	-	1	1	1

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