2DI30D-100 datasheet, PDF - EEWORLD Datasheet

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2DI30D-100: DescriptionPower Bipolar Transistor, 30A I(C), 1000V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 7 Pin; CategoryDiscrete semiconductor The transistor; File Size39KB，1 Pages; ManufacturerFuji Electric Co., Ltd.

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2DI30D-100 Overview

Power Bipolar Transistor, 30A I(C), 1000V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 7 Pin

2DI30D-100 Parametric

Parameter Name	Attribute value
package instruction	FLANGE MOUNT, R-PUFM-X7
Reach Compliance Code	unknow
Maximum collector current (IC)	30 A
Collector-emitter maximum voltage	1000 V
Configuration	COMPLEX
Minimum DC current gain (hFE)	100
Maximum landing time (tf)	3000 ns
JESD-30 code	R-PUFM-X7
Number of components	2
Number of terminals	7
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Maximum power consumption environment	300 W
Maximum power dissipation(Abs)	300 W
Certification status	Not Qualified
Maximum rise time (tr)	2500 ns
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UPPER
Transistor component materials	SILICON
Maximum off time (toff)	18000 ns
Maximum opening time (tons)	2500 ns
Base Number Matches	1

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2DI30D-100 Related Products

	2DI30D-100	2DI100D-100	2DI150D-100	SL3-105-SH216/01-66	SP2-048-H22/0-96/11C	EV1234	EV1255	EV1274	EV1277
Description	Power Bipolar Transistor, 30A I(C), 1000V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 7 Pin	Power Bipolar Transistor, 100A I(C), 1000V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 11 Pin	Power Bipolar Transistor, 150A I(C), 1000V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 11 Pin	Board Connector, 105 Contact(s), 3 Row(s), Male, Straight, 0.1 inch Pitch, Wire Wrap Terminal, Locking, Black Insulator, Receptacle	Board Connector, 48 Contact(s), 2 Row(s), Male, Straight, 0.05 inch Pitch, Surface Mount Terminal, Locking, Black Insulator, Receptacle	Power Bipolar Transistor, 50A I(C), 2-Element	Power Bipolar Transistor, 100A I(C), 2-Element	Power Bipolar Transistor, 20A I(C), 1-Element	Power Bipolar Transistor, 30A I(C), 1000V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 6 Pin
Reach Compliance Code	unknow	unknow	unknow	compliant	compliant	unknown	unknown	unknown	unknown
Maximum collector current (IC)	30 A	100 A	150 A	-	-	50 A	100 A	20 A	30 A
Minimum DC current gain (hFE)	100	100	100	-	-	100	200	100	100
Maximum landing time (tf)	3000 ns	3000 ns	3000 ns	-	-	2000 ns	2000 ns	2000 ns	2000 ns
Number of components	2	2	2	-	-	2	2	1	2
Maximum power dissipation(Abs)	300 W	800 W	1000 W	-	-	500 W	800 W	200 W	300 W
Maximum rise time (tr)	2500 ns	2500 ns	2500 ns	-	-	3000 ns	3000 ns	3000 ns	3000 ns
Base Number Matches	1	1	1	-	-	1	1	1	-

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