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HX6856/1S1NYT

Description
Standard SRAM, 256KX1, 25ns, CMOS, CDIP28, CERAMIC, DIP-28
Categorystorage    storage   
File Size708KB,12 Pages
ManufacturerHoneywell
Websitehttp://www.ssec.honeywell.com/
Download Datasheet Parametric View All

HX6856/1S1NYT Overview

Standard SRAM, 256KX1, 25ns, CMOS, CDIP28, CERAMIC, DIP-28

HX6856/1S1NYT Parametric

Parameter NameAttribute value
MakerHoneywell
Parts packaging codeDIP
package instructionDIP,
Contacts28
Reach Compliance Codeunknown
ECCN code3A001.A.2.C
Maximum access time25 ns
Other featuresUSER CONFIGURABLE 32K X 8; TTL COMPATIBLE INPUTS/OUTPUTS
Spare memory width4
JESD-30 codeR-CDIP-T28
length35.56 mm
memory density262144 bit
Memory IC TypeSTANDARD SRAM
memory width1
Number of functions1
Number of ports1
Number of terminals28
word count262144 words
character code256000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize256KX1
Output characteristics3-STATE
ExportableYES
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeDIP
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
Certification statusNot Qualified
Maximum seat height4.445 mm
Minimum standby current2.5 V
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelMILITARY
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
width15.24 mm

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