AN1A4ZQ-T datasheet, PDF - EEWORLD Datasheet

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AN1A4ZQ-T: DescriptionAN1A4ZQ-T; CategoryDiscrete semiconductor The transistor; File Size230KB，6 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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AN1A4ZQ-T

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Parameter Name	Attribute value
Maker	Renesas Electronics Corporation
package instruction	,
Reach Compliance Code	unknown

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To our customers,

Old Company Name in Catalogs and Other Documents

On April 1

, 2010, NEC Electronics Corporation merged with Renesas Technology

Corporation, and Renesas

Electronics Corporation

took over all the business of both

companies.

Therefore, although the old company name remains in this document, it is a valid

Renesas

Electronics document. We appreciate your understanding.

Renesas Electronics website: http://www.renesas.com

April 1

, 2010

Renesas Electronics Corporation

Issued by:

Renesas Electronics Corporation

(http://www.renesas.com)

Send any inquiries to http://www.renesas.com/inquiry.

Notice

All information included in this document is current as of the date this document is issued. Such information, however, is

subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please

confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to

additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website.

Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights

of third parties by or arising from the use of Renesas Electronics products or technical information described in this document.

No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights

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You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part.

Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of

semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software,

and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by

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When exporting the products or technology described in this document, you should comply with the applicable export control

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Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics

does not warrant that such information is error free. Renesas Electronics assumes no liability whatsoever for any damages

incurred by you resulting from errors in or omissions from the information included herein.

Renesas Electronics products are classified according to the following three quality grades: “Standard”, “High Quality”, and

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liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for an

application categorized as “Specific” or for which the product is not intended where you have failed to obtain the prior written

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“High Quality”: Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-

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You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics,

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damages arising out of the use of Renesas Electronics products beyond such specified ranges.

Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have

specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further,

Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to

guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a

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the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system

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compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable

laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS

Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with

applicable laws and regulations.

This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas

Electronics.

Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this

document or Renesas Electronics products, or if you have any other inquiries.

“Standard”:

10.

11.

12.

(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majority-

owned subsidiaries.

(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.

DATA SHEET

COMPOUND TRANSISTOR

AN1A4Z

on-chip resistor PNP silicon epitaxial transistor

For mid-speed switching

FEATURES

• On-chip bias resistor

= 10 kΩ)

• Complementary transistor with AA1A4Z

PACKAGE DRAWING (UNIT: mm)

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Collector current (Pulse)

Total power dissipation

Junction temperature

Storage temperature

Symbol

CBO

CEO

EBO

C(DC)

C(pulse)

stg

Ratings

−60

−50

−5

−100

−200

250

150

−55

to +150

Unit

°C

* PW

≤

10 ms, duty cycle

≤

50 %

ELECTRICAL CHARACTERISTICS (Ta = 25°C)

Parameter

Collector cutoff current

DC current gain

Collector saturation voltage

Low level input voltage

High level input voltage

Input resistance

Turn-on time

Storage time

Turn-off time

Symbol

CBO

FE1

FE2

CE(sat)

stg

off

−5.0

V, R

= 1.0 kΩ

−5.0

V, PW = 2.0

duty cycle≤2 %

Conditions

−50

V, I

= 0

−5.0

V, I

−5.0

V, I

−50

−5.0

mA, I

−0.25

−5.0

V, I

−100

−0.2

V, I

−5.0

−2.0

7.0

135

100

190

170

−0.07

−0.57

−0.9

13.0

0.2

5.0

6.0

−0.2

−0.5

MIN.

TYP.

MAX.

−100

600

Unit

−

kΩ

** Pulse test PW

≤

350

s, duty cycle

≤

2 %

CLASSIFICATION

Marking

FE1

135 to 270

200 to 400

300 to 600

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D16166EJV0DS00 (1st edition)

Date Published April 2002 N CP(K)

Printed in Japan

2002

1998

AN1A4Z

TYPICAL CHARACTERISTICS (T

= 25°C)

Data Sheet D16166EJ1V0DS

AN1A4Z

Data Sheet D16166EJ1V0DS

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