MBM27256-25Z-X datasheet, PDF - EEWORLD Datasheet

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MBM27256-25Z-X: DescriptionEPROM, 32KX8, 250ns, MOS, CDIP28; Categorystorage storage; File Size314KB，12 Pages; ManufacturerFUJITSU; Websitehttp://edevice.fujitsu.com/fmd/en/index.html

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MBM27256-25Z-X Overview

EPROM, 32KX8, 250ns, MOS, CDIP28

MBM27256-25Z-X Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	FUJITSU
package instruction	DIP, DIP28,.6
Reach Compliance Code	compliant
Maximum access time	250 ns
I/O type	COMMON
JESD-30 code	R-XDIP-T28
JESD-609 code	e0
memory density	262144 bit
memory width	8
Number of terminals	28
word count	32768 words
character code	32000
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	32KX8
Output characteristics	3-STATE
Package body material	CERAMIC
encapsulated code	DIP
Encapsulate equivalent code	DIP28,.6
Package shape	RECTANGULAR
Package form	IN-LINE
power supply	5 V
Programming voltage	12.5 V
Certification status	Not Qualified
Maximum slew rate	0.12 mA
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	MOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL

MBM27256-25Z-X Related Products

	MBM27256-25Z-X	MBM27256-20CV	MBM27256-30CV	MBM27256-25CV	MBM27256-17CV	MBM27256-20Z-X
Description	EPROM, 32KX8, 250ns, MOS, CDIP28	EPROM, 32KX8, 200ns, MOS, CQCC32	EPROM, 32KX8, 300ns, MOS, CQCC32	EPROM, 32KX8, 250ns, MOS, CQCC32	EPROM, 32KX8, 170ns, MOS, CQCC32	EPROM, 32KX8, 200ns, MOS, CDIP28
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
package instruction	DIP, DIP28,.6	QCCN, LCC32,.45X.55	QCCN, LCC32,.45X.55	QCCN, LCC32,.45X.55	QCCN, LCC32,.45X.55	DIP, DIP28,.6
Reach Compliance Code	compliant	unknown	unknown	unknown	unknown	compli
Maximum access time	250 ns	200 ns	300 ns	250 ns	170 ns	200 ns
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-XDIP-T28	R-XQCC-N32	R-XQCC-N32	R-XQCC-N32	R-XQCC-N32	R-XDIP-T28
JESD-609 code	e0	e0	e0	e0	e0	e0
memory density	262144 bit	262144 bit	262144 bit	262144 bit	262144 bit	262144 bi
memory width	8	8	8	8	8	8
Number of terminals	28	32	32	32	32	28
word count	32768 words	32768 words	32768 words	32768 words	32768 words	32768 words
character code	32000	32000	32000	32000	32000	32000
Maximum operating temperature	85 °C	70 °C	70 °C	70 °C	70 °C	85 °C
organize	32KX8	32KX8	32KX8	32KX8	32KX8	32KX8
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	CERAMIC	CERAMIC	CERAMIC	CERAMIC	CERAMIC	CERAMIC
encapsulated code	DIP	QCCN	QCCN	QCCN	QCCN	DIP
Encapsulate equivalent code	DIP28,.6	LCC32,.45X.55	LCC32,.45X.55	LCC32,.45X.55	LCC32,.45X.55	DIP28,.6
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	IN-LINE
power supply	5 V	5 V	5 V	5 V	5 V	5 V
Programming voltage	12.5 V	12.5 V	12.5 V	12.5 V	12.5 V	12.5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum slew rate	0.12 mA	0.1 mA	0.1 mA	0.1 mA	0.1 mA	0.12 mA
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	NO	YES	YES	YES	YES	NO
technology	MOS	MOS	MOS	MOS	MOS	MOS
Temperature level	INDUSTRIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	NO LEAD	NO LEAD	NO LEAD	NO LEAD	THROUGH-HOLE
Terminal pitch	2.54 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	2.54 mm
Terminal location	DUAL	QUAD	QUAD	QUAD	QUAD	DUAL
Maker	FUJITSU	-	-	FUJITSU	FUJITSU	FUJITSU

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