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T3401N36TOF

Description
Silicon Controlled Rectifier, 8570A I(T)RMS, 3500000mA I(T), 3600V V(DRM), 3600V V(RRM), 1 Element,
CategoryAnalog mixed-signal IC    Trigger device   
File Size189KB,9 Pages
ManufacturerEUPEC [eupec GmbH]
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T3401N36TOF Overview

Silicon Controlled Rectifier, 8570A I(T)RMS, 3500000mA I(T), 3600V V(DRM), 3600V V(RRM), 1 Element,

T3401N36TOF Parametric

Parameter NameAttribute value
MakerEUPEC [eupec GmbH]
Reach Compliance Codeunknown
Nominal circuit commutation break time300 µs
ConfigurationSINGLE
Critical rise rate of minimum off-state voltage1000 V/us
Maximum DC gate trigger current350 mA
Maximum DC gate trigger voltage2.5 V
Maximum holding current350 mA
JESD-30 codeO-CXDB-X4
Maximum leakage current200 mA
On-state non-repetitive peak current75000 A
Number of components1
Number of terminals4
Maximum on-state current3500000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Certification statusNot Qualified
Maximum rms on-state current8570 A
Off-state repetitive peak voltage3600 V
Repeated peak reverse voltage3600 V
surface mountYES
Terminal formUNSPECIFIED
Terminal locationUNSPECIFIED
Trigger device typeSCR

T3401N36TOF Preview

N
Netz-Thyristor
Phase Control Thyristor
Datenblatt / Data sheet
T 3401N
Elektrische Eigenschaften
V
DRM
,V
RRM
3100
3500
V
DRM
,V
RRM
3200
3600
I
TRMSM
T
C
= 85 °C
T
C
= 60 °C
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
DIN IEC 60747-6
f = 50 Hz, i
GM
= 3 A, di
G
/dt = 6 A/µs
T
vj
= T
vj max
, v
D
= 0,67 V
DRM
5.Kennbuc hstabe / 5
th
letter F
I
TAVM
I
TSM
I²t
(di
T
/dt)
c r
(dv
D
/dt)
c r
3300 V
3600 V
3400 V
3700 V
8570 A
3880 A
5460 A
91000 A
87000 A
41400 10³ A²s
37850 10³ A²s
300 A/µs
Elektrisch e Eig enschaften / Electrical properties
Höchstzul ässige Werte / M aximum rated val ues
Periodische Vorwärts- und Rüc kwärts-Spitzensperrspannung T
vj
= -40°C... T
v j max
Kenndaten
repetiti ve peak forward off-state and revers e voltages
Periodische Vorwärts- und Rüc kwärts-Spitzensperrspannung T
vj
= 0°C... T
v j max
repetiti ve peak forward off-state and revers e voltages
Durchlaßstrom-Grenzeffekti vwert
maxi mum RMS on-state current
Dauergrenzstrom
average on-state c urrent
Stoßstrom-Grenz wert
surge current
Grenzlastintegral
I²t-value
Kritische Str omsteilheit
critical rate of rise of on-state current
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
1000 V/µs
Charakteristische Werte / Characteristic values
Durchlaßspannung
on-state voltage
Schleus ens pannung
threshold voltage
Ersatzwi derstand
slope resistanc e
Durchlaßkennlinie
on-state c haracteristic
v
T
T
vj
= T
vj max
, i
T
= 4000A
T
vj
= T
vj max
T
vj
= T
vj max
T
vj
= T
vj max
v
T
V
(TO)
r
T
typ.
A
B
C
D
A
B
C
D
typ.
max.
typ.
max.
typ.
max.
1,3 V
1,4 V
0,772 V
0,826 V
0,131 mΩ
0,143 mΩ
=
A
+
B
i
T
+
C
Ln ( i
T
+
1)
+
D
i
T
max.
Zündstr om
gate trigger current
Zünds pannung
gate trigger voltage
Nicht zündender Steuerstrom
gate non-trigger current
Nicht zündende Steuerspannung
gate non-trigger voltage
Haltestrom
holding current
Einraststrom
latching current
Vorwärts- und Rüc kwärts-Sperrstrom
forward off-state and reverse c urrent
Zündverzug
gate controlled delay ti me
prepar ed by: C. Schneider
approved by: J. Przybilla
T
vj
= 25°C, v
D
= 12 V
T
vj
= 25°C, v
D
= 12 V
T
vj
= T
vj max
, v
D
= 12 V
T
vj
= T
vj max
, v
D
= 0,5 V
DRM
T
vj
= T
vj max
, v
D
= 0,5 V
DRM
T
vj
= 25°C, v
D
= 12 V
T
vj
= 25°C, v
D
= 12 V, R
GK
10
i
GM
= 3 A, di
G
/dt = 6 A/µs, t
g
= 20 µs
T
vj
= T
vj max
v
D
= V
DRM
, v
R
= V
RRM
DIN IEC 60747-6
T
vj
= 25 °C,i
GM
= 3 A, di
G
/dt = 6 A/µs
I
GT
V
GT
I
GD
V
GD
I
H
I
L
i
D
, i
R
t
gd
0,69572
2,888E-07
-0,039737
0,0147
0,74851
9,023E-6
-0,04072
0,01505
max.
350 mA
max.
max.
max.
max.
max.
max.
max.
max.
2,5 V
20 mA
10 mA
0,4 V
350 mA
3 A
600 mA
2 µs
date of publication: 2005-04-15
revision:
6
BIP AM / SM PB, 2001-04-10, Przybilla J. / Keller
Seite/page
1/9
N
Netz-Thyristor
Phase Control Thyristor
Datenblatt / Data sheet
T 3401N
Thermische Eigenschaften
Mechanische Eigenschaften
T
v j
= T
v j max
, i
TM
= I
TAVM
v
RM
= 100 V, v
DM
= 0,67 V
DRM
dv
D
/dt = 20 V/µs, -di
T
/dt = 10 A/µs
4.Kennbuc hstabe / 4
th
letter O
T
v j
= T
v j max
i
TM
= I
TAVM
, -di
T
/dt = 10 A/µs
V
R
= 0,5V
RRM
, V
RM
= 0,8V
RRM
T
v j
= T
v j max
i
TM
= I
TAVM
, -di
T
/dt = 10 A/µs
V
R
= 0,5V
RRM
, V
RM
= 0,8V
RRM
t
q
Elektrisch e Eig enschaften / Electrical properties
Charakteristische Werte / Characteristic values
Freiwerdezeit
circuit commutated turn-off ti me
typ.
Q
r
max.
I
RM
max.
300
µs
Sperr verzögerungsladung
recovered charge
Rückstr oms pitze
peak reverse r ecover y c urrent
10,5
mAs
300
A
Thermische Eigenschaften / Th ermal properties
Innerer Wärmewiderstand
thermal resistance, junc tion to c ase
Kühlfläc he / cooling surfac e
beids eitig / two-sided,
θ
= 180°sin
beids eitig / two-sided, DC
Anode / anode, DC
Kathode / c athode, DC
Kühlfläc he / cooling surfac e
beids eitig / two-sided
einseitig / single-sided
R
thJ C
max.
max.
max.
max.
0,0054
0,005
0,009
0,0112
°C/W
°C/W
°C/W
°C/W
Übergangs-Wärmewi derstand
thermal resistance, cas e to heatsi nk
Höchstzul ässige Sperrschichttemperatur
maxi mum junction temperature
Betriebs temperatur
operating temperature
Lagertemperatur
storage temperature
R
thCH
T
v j max
T
c op
T
s tg
max. 0,0015
°C/W
°C/W
max. 0,003
125 °C
-40...+125 °C
-40...+150 °C
Mechanische Eigen schaften / Mech anical properties
Gehäuse, siehe Anlage
case, s ee annex
Si-Element mit Druc kkontakt
Si-pellet with press ure contac t
Anpress kraft
clampi ng force
Steueransc hlüss e
control terminals
Gewic ht
weight
Kriechstrec ke
creepage distance
Schwingfestigkeit
vibration r esistanc e
f = 50 Hz
DIN 46244
Gate
Kathode /Cathode
G
typ.
F
Seite 3
page 3
63...91
A 4,8x0,8
A 6,3x0,8
kN
3000 g
49 mm
50 m/s²
BIP AM / SM PB, 2001-04-10, Przybilla J. / Keller
Seite/page
2/9
N
Netz-Thyristor
Phase Control Thyristor
Datenblatt / Data sheet
T 3401N
Maßbild
4 5
1
2
1:
Anode/Anode
2:
Kathode/Cathode
4:
Gate
5:
Hilfskathode/
Cathode
(control terminal)
BIP AM / SM PB, 2001-04-10, Przybilla J. / Keller
Seite/page
3/9
N
Netz-Thyristor
Phase Control Thyristor
Datenblatt / Data sheet
T 3401N
R,t – Werte
R
R,T-Werte
beidseitig
two-sided
Analytische Elemente des transienten Wärmew iderstandes Z
thJC
Analytical elements of transient thermal impedance Z
thJC
Pos. n
R
thn
[°C/W]
1
0,00158
2,05
0,00558
7,2
0,00778
10
2
0,00216
0,25
0,00216
0,25
0,00216
0,25
3
0,00042
0,09
0,00042
0,09
0,00042
0,09
4
0,00055
0,0195
0,00055
0,0195
0,00055
0,0195
5
0,00029
0,0055
0,00029
0,0055
0,00029
0,0055
6
7
τ
n
[s]
R
thn
[°C/W]
anodenseitg
anode-sided
τ
n
[s]
R
thn
[°C/W]
kathodenseitig
cathode-sided
τ
n
[s]
Analytische Funktion / Analytical function:
Z
thJC
=
n
max
n=1
Σ
R
thn
1
e
-t
τ
n
c
0 ,0 1 2
0 ,0 1
a
0 ,0 0 8
Z
th JC
[K/W]
0 ,0 0 6
d
0 ,0 0 4
0 ,0 0 2
0
0 ,0 0 1
0 ,0 1
0 ,1
t [s ]
1
10
100
Transienter innerer Wärmewiderstand für DC/ Transient thermal impedance Z
Beidseitige Kühlung / Two-sided cooling
Anodenseitige Kühlung / Anode-sided cooling
Kathodenseitige Kühlung / Cathode-sided cooling
thJC
= f(t) for DC
BIP AM / SM PB, 2001-04-10, Przybilla J. / Keller
Seite/page
4/9
N
Netz-Thyristor
Phase Control Thyristor
80 00
Datenblatt / Data sheet
T 3401N
Diagramme
Diagramme
Durchlasskennlinie
70 00
60 00
50 00
i
T
[V]
40 00
ty p
m ax .
30 00
20 00
10 00
0
0
0,5
1
v
T
[V]
1 ,5
2
Grenzdurchlaßkennlinie / Limiting on-state characteristic i
T
= f(v
T
)
T
vj
= T
vj max
BIP AM / SM PB, 2001-04-10, Przybilla J. / Keller
Seite/page
5/9

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Description Silicon Controlled Rectifier, 8570A I(T)RMS, 3500000mA I(T), 3600V V(DRM), 3600V V(RRM), 1 Element, Silicon Controlled Rectifier, 8570A I(T)RMS, 3400000mA I(T), 3300V V(DRM), 3300V V(RRM), 1 Element, Silicon Controlled Rectifier, 8570A I(T)RMS, 3400000mA I(T), 3100V V(DRM), 3100V V(RRM), 1 Element,
Maker EUPEC [eupec GmbH] EUPEC [eupec GmbH] EUPEC [eupec GmbH]
Reach Compliance Code unknown unknown unknown
Nominal circuit commutation break time 300 µs 350 µs 350 µs
Configuration SINGLE SINGLE SINGLE
Critical rise rate of minimum off-state voltage 1000 V/us 1000 V/us 1000 V/us
Maximum DC gate trigger current 350 mA 350 mA 350 mA
Maximum DC gate trigger voltage 2.5 V 2.5 V 2.5 V
JESD-30 code O-CXDB-X4 O-CXDB-X4 O-CXDB-X4
On-state non-repetitive peak current 75000 A 75000 A 75000 A
Number of components 1 1 1
Number of terminals 4 4 4
Maximum on-state current 3500000 A 3400000 A 3400000 A
Maximum operating temperature 125 °C 125 °C 125 °C
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape ROUND ROUND ROUND
Package form DISK BUTTON DISK BUTTON DISK BUTTON
Certification status Not Qualified Not Qualified Not Qualified
Maximum rms on-state current 8570 A 8570 A 8570 A
Off-state repetitive peak voltage 3600 V 3300 V 3100 V
Repeated peak reverse voltage 3600 V 3300 V 3100 V
surface mount YES YES YES
Terminal form UNSPECIFIED UNSPECIFIED UNSPECIFIED
Terminal location UNSPECIFIED UNSPECIFIED UNSPECIFIED
Trigger device type SCR SCR SCR
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