CSD17573Q5BT datasheet, PDF - EEWORLD Datasheet

CSD17573Q5BT: DescriptionCSD17573Q5B 30 V, N-Channel NexFET Power MOSFET 8-VSON-CLIP; CategoryDiscrete semiconductor The transistor; File Size498KB，13 Pages; ManufacturerTexas Instruments; Websitehttp://www.ti.com.cn/; Environmental Compliance

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CSD17573Q5B 30 V, N-Channel NexFET Power MOSFET 8-VSON-CLIP

Parameter Name	Attribute value
Brand Name	Texas Instruments
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Texas Instruments
package instruction	SMALL OUTLINE, R-PDSO-N5
Reach Compliance Code	_compli
ECCN code	EAR99
Factory Lead Time	6 weeks
Samacsys Descripti	Texas Instruments CSD17573Q5BT N-channel MOSFET Transistor, 43 A, Minimum of 30 V, 8-Pin VSCON-CLIP
Other features	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	289 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (ID)	43 A
Maximum drain-source on-resistance	0.00145 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	390 pF
JESD-30 code	R-PDSO-N5
JESD-609 code	e4
Humidity sensitivity level	1
Number of components	1
Number of terminals	5
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	400 A
surface mount	YES
Terminal surface	Nickel/Palladium/Gold (Ni/Pd/Au)
Terminal form	NO LEAD
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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