|
EL5420CLZ-T13 |
EL5120IYEZ |
EL5220CY-13 |
EL5420CLZ |
Description |
12MHz Rail-to-Rail Input-Output Op Amps; QFN16, SOIC14, TSSOP14; Temp Range: -40° to 85°C |
OP-AMP, 12000uV OFFSET-MAX, 8MHz BAND WIDTH, PDSO8, LEAD FREE, HMSOP-8 |
DUAL OP-AMP, 12000uV OFFSET-MAX, 8MHz BAND WIDTH, PDSO10, MSOP-10 |
12MHz Rail-to-Rail Input-Output Op Amps; QFN16, SOIC14, TSSOP14; Temp Range: -40° to 85°C |
Is it Rohs certified? |
conform to |
conform to |
incompatible |
conform to |
Maker |
Renesas Electronics Corporation |
Renesas Electronics Corporation |
Renesas Electronics Corporation |
Renesas Electronics Corporation |
Parts packaging code |
QFN, SOIC, TSSOP |
MSOP |
MSOP |
QFN, SOIC, TSSOP |
package instruction |
HVQCCN, LCC16,.16SQ,25 |
VSSOP, TSSOP8,.19 |
TSSOP, |
HVQCCN, LCC16,.16SQ,25 |
Contacts |
16, 14, 14 |
8 |
10 |
16, 14, 14 |
Reach Compliance Code |
compliant |
compliant |
compliant |
compliant |
ECCN code |
EAR99 |
EAR99 |
EAR99 |
EAR99 |
Amplifier type |
OPERATIONAL AMPLIFIER |
OPERATIONAL AMPLIFIER |
OPERATIONAL AMPLIFIER |
OPERATIONAL AMPLIFIER |
Maximum average bias current (IIB) |
0.05 µA |
0.05 µA |
0.05 µA |
0.05 µA |
Nominal Common Mode Rejection Ratio |
70 dB |
70 dB |
70 dB |
70 dB |
Maximum input offset voltage |
12000 µV |
12000 µV |
12000 µV |
12000 µV |
JESD-30 code |
S-XQCC-N16 |
S-PDSO-G8 |
S-PDSO-G10 |
S-XQCC-N16 |
JESD-609 code |
e3 |
e3 |
e0 |
e3 |
length |
4 mm |
3 mm |
3 mm |
4 mm |
Negative supply voltage upper limit |
-9 V |
-9 V |
-9 V |
-9 V |
Nominal Negative Supply Voltage (Vsup) |
-5 V |
-5 V |
-5 V |
-5 V |
Number of functions |
4 |
1 |
2 |
4 |
Number of terminals |
16 |
8 |
10 |
16 |
Maximum operating temperature |
85 °C |
85 °C |
85 °C |
85 °C |
Minimum operating temperature |
-40 °C |
-40 °C |
-40 °C |
-40 °C |
Package body material |
UNSPECIFIED |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
UNSPECIFIED |
encapsulated code |
HVQCCN |
VSSOP |
TSSOP |
HVQCCN |
Package shape |
SQUARE |
SQUARE |
SQUARE |
SQUARE |
Package form |
CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE |
SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE |
Peak Reflow Temperature (Celsius) |
260 |
260 |
240 |
260 |
Certification status |
Not Qualified |
Not Qualified |
Not Qualified |
Not Qualified |
Maximum seat height |
1 mm |
1 mm |
1.1 mm |
1 mm |
Nominal slew rate |
10 V/us |
10 V/us |
10 V/us |
10 V/us |
Supply voltage upper limit |
9 V |
9 V |
9 V |
9 V |
Nominal supply voltage (Vsup) |
5 V |
5 V |
5 V |
5 V |
surface mount |
YES |
YES |
YES |
YES |
technology |
CMOS |
CMOS |
CMOS |
CMOS |
Temperature level |
INDUSTRIAL |
INDUSTRIAL |
INDUSTRIAL |
INDUSTRIAL |
Terminal surface |
Matte Tin (Sn) - annealed |
MATTE TIN |
TIN LEAD |
Matte Tin (Sn) - annealed |
Terminal form |
NO LEAD |
GULL WING |
GULL WING |
NO LEAD |
Terminal pitch |
0.65 mm |
0.65 mm |
0.5 mm |
0.65 mm |
Terminal location |
QUAD |
DUAL |
DUAL |
QUAD |
Maximum time at peak reflow temperature |
40 |
40 |
NOT SPECIFIED |
40 |
Nominal Uniform Gain Bandwidth |
8000 kHz |
8000 kHz |
8000 kHz |
8000 kHz |
width |
4 mm |
3 mm |
3 mm |
4 mm |
Architecture |
VOLTAGE-FEEDBACK |
VOLTAGE-FEEDBACK |
- |
VOLTAGE-FEEDBACK |
Maximum bias current (IIB) at 25C |
0.05 µA |
0.05 µA |
- |
0.05 µA |
frequency compensation |
YES |
YES |
- |
YES |
low-bias |
NO |
NO |
- |
NO |
low-dissonance |
NO |
NO |
- |
NO |
micropower |
YES |
YES |
- |
YES |
Humidity sensitivity level |
3 |
3 |
- |
3 |
Encapsulate equivalent code |
LCC16,.16SQ,25 |
TSSOP8,.19 |
- |
LCC16,.16SQ,25 |
power |
NO |
NO |
- |
NO |
power supply |
5/15/+-5 V |
5/15/+-5 V |
- |
5/15/+-5 V |
Programmable power |
NO |
NO |
- |
NO |
Maximum slew rate |
3 mA |
0.75 mA |
- |
3 mA |
Minimum voltage gain |
5600 |
5600 |
- |
5600 |
broadband |
NO |
NO |
- |
NO |