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MASMBJP6KE15E3TR

Description
Trans Voltage Suppressor Diode, 600W, 12.1V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, PLASTIC, SMBJ, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size216KB,4 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Environmental Compliance
Download Datasheet Parametric View All

MASMBJP6KE15E3TR Overview

Trans Voltage Suppressor Diode, 600W, 12.1V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, PLASTIC, SMBJ, 2 PIN

MASMBJP6KE15E3TR Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicrosemi
Parts packaging codeDO-214AA
package instructionR-PDSO-C2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum breakdown voltage16.5 V
Minimum breakdown voltage13.5 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-214AA
JESD-30 codeR-PDSO-C2
Maximum non-repetitive peak reverse power dissipation600 W
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
polarityUNIDIRECTIONAL
Maximum power dissipation1.38 W
Maximum repetitive peak reverse voltage12.1 V
surface mountYES
technologyAVALANCHE
Terminal formC BEND
Terminal locationDUAL
SMBJP6KE6.8 thru SMBJP6KE200CA, e3 and
SMBGP6KE6.8 thru SMBGP6KE200CA, e3
SCOTTSDALE DIVISION
600 Watt TRANSIENT VOLTAGE
SUPPRESSOR
APPEARANCE
DESCRIPTION
This SMBJP6KE and SMBGP6KE series is an economical surface mount version of
the popular P6KE axial-leaded series of 600 W Transient Voltage Suppressors
(TVSs). It is available in both unidirectional and bi-directional configurations for
protecting voltage-sensitive components from destruction or degradation. Response
time of clamping action is virtually instantaneous. As a result, they may also be used
effectively for protection from ESD or EFT per IEC61000-4-2 and IEC61000-4-4 or for
inductive switching environments and induced RF. They can also be used for
protecting other sensitive components from secondary lightning effects per IEC61000-
4-5 and class levels defined herein. Microsemi also offers numerous other TVS
products to meet higher and lower power demands and special applications.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
WWW .
Microsemi
.C
OM
NOTE: All SMB series are
equivalent to prior SMS package
identifications.
FEATURES
Economical TVS series for surface mount
Available in both unidirectional and bidirectional
(add C or CA suffix to part number for bidirectional)
Selections for 6.8 to 200 volts breakdown (V
BR
)
Fast response
Optional 100%
screening for avionics grade
is
available by adding MA prefix to part number for added
o
o
100% temperature cycle -55 C to +125 C (10X) as well
as surge (3X) and 24 hours HTRB with post test V
Z
&
I
R
(in the operating direction for unidirectional or both
directions for bidirectional)
Options for screening in accordance with MIL-PRF-
19500 for JAN, JANTX, and JANTXV are available by
adding MQ, MX, or MV prefixes respectively to part
numbers.
Axial-lead (thru-hole) equivalents available as P6KE6.8
to P6KE200CA (consult factory for other options)
Moisture classification is Level 1 with no dry pack
required per IPC/JEDEC J-STD-020B
RoHS Compliant devices available by adding an “e3”
suffix.
APPLICATIONS / BENEFITS
Suppresses transients up to 600 watts @ 10/1000
µs (see Figure 1)
Protects sensitive components such as IC’s,
2
CMOS, Bipolar, BiCMOS, ECL, DTL, T L, etc.
Protection from switching transients & induced RF
Compliant to IEC61000-4-2 and IEC61000-4-4 for
ESD and EFT protection respectively
Secondary lightning protection per IEC61000-4-5
with 42 Ohms source impedance:
Class 1: SMBJ(G)P6KE6.8 to 130A or CA
Class 2: SMBJ(G)P6KE6.8 to 68A or CA
Class 3: SMBJ(G)P6KE6.8 to 36A or CA
Class 4: SMBJ(G)P6KE6.8 to 18A or CA
Secondary lightning protection per IEC61000-4-5
with 12 Ohms source impedance:
Class 1: SMBJ(G)P6KE6.8 to 43A or CA
Class 2: SMBJ(G)P6KE6.8 to 22A or CA
MAXIMUM RATINGS
Peak Pulse Power dissipation at 25
o
C: 600 watts at
10/1000
μs
(also see Fig 1,2, and 3).
Impulse repetition rate (duty factor): 0.01%
t
clamping
(0 volts to V
(BR)
min.): < 100 ps theoretical for
unidirectional and < 5 ns for bidirectional
Operating and Storage temperature: -65
o
C to +150
o
C
º
º
Thermal resistance: 25 C/W junction to lead, or 90 C/W
junction to ambient when mounted on FR4 PC board (1oz
Cu) with recommended footprint (see last page)
Steady-State Power dissipation: 5 watts at T
L
= 25
o
C, or
1.38 watts at T
A
= 25
º
C when mounted on FR4 PC board
with recommended footprint
o
Forward Voltage at 25 C: 3.5 Volts maximum @ 50 Amp
peak impulse of 8.3 ms half-sine wave (unidirectional
only)
Solder temperatures: 260
o
C for 10 s (maximum)
Copyright
©
2007
6-21-2007 Rev C
MECHANICAL AND PACKAGING
CASE: Void-free transfer molded thermosetting
epoxy body meeting UL94V-0
FINISH: Tin-Lead plated or RoHS Compliant
annealed matte-tin plating over copper and readily
solderable per MIL-STD-750, method 2026
MARKING: Body marked without SMBJ or SMBG
part number prefix, e.g. P6KE6.8A, P6KE6.8Ae3,
P6KE36, P6KE200CA, P6KE200CAe3, etc.
POLARITY: Band denotes cathode. Bidirectional
not marked
WEIGHT: 0.1 grams (approximate)
TAPE & REEL option: Standard per EIA-481-1-A
with 12 mm tape, 750 per 7 inch reel or 2500 per
13 inch reel (add “TR” suffix to part number)
See package dimensions on last page
SMBJ(G)P6KE6.8-200Ae3
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
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