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DH72470

Description
Diode,
CategoryDiscrete semiconductor    diode   
File Size60KB,2 Pages
ManufacturerRakon Limited
Download Datasheet Parametric View All

DH72470 Overview

Diode,

DH72470 Parametric

Parameter NameAttribute value
MakerRakon Limited
Contacts2
Manufacturer packaging codeBH28
Reach Compliance Codeunknown
ECCN codeEAR99
Base Number Matches1
TUNING VARACTOR
High Q silicon abrupt junction tuning varactor
HIGH Q SILICON ABRUPT JUNCTION TUNING VARACTOR
V
BR
30 V
Description
This series of high Q epi-junction microwave tuning varactors (30 V) incorporates a passivated mesa
technology. It is well suited for frequency tuning applications up to Ku band.
C
HIP
D
IODES
Gold
dia
Ø
C
HIP AND
P
ACKAGED
D
IODES
V
BR
(10 µA)
30 V
junction
capacitance
Cj
V
R
= 4 V
f = 1 MH
Z
µm
typ.
EH71004
EH71006
EH71008
EH71010
EH71012
EH71016
EH71020
EH71025
EH71030
EH71037
EH71045
EH71054
EH71067
EH71080
EH71100
EH71120
EH71150
EH71180
EH71200
EH71220
EH71270
EH71330
EH71390
EH71470
EH71560
EH71680
EH71820
EH71999
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2a
C2b
C2b
C2b
C2b
C2b
C2b
C2b
C2b
C2c
C2c
C2c
C2c
C2c
C2d
C2d
50
60
70
80
90
100
110
120
140
150
170
180
200
220
250
270
300
330
350
370
410
450
500
540
590
650
720
800
pF
± 20 % (2)
0.4
0.6
0.8
1.0
1.2
1.6
2.0
2.5
3.0
3.7
4.5
5.4
± 10 % (2)
6.7
8.0
10.0
12.0
15.0
18.0
20.0
22.0
27.0
33.0
39.0
47.0
56.0
68.0
82.0
100.0
min.
4500
4500
4400
4300
4200
4100
3900
3600
3400
3200
3000
2800
2600
2400
2200
2000
1800
1700
1500
1400
1300
1200
950
750
650
500
400
300
DH71004
DH71006
DH71008
DH71010
DH71012
DH71016
DH71020
DH71025
DH71030
DH71037
DH71045
DH71054
DH71067
DH71080
DH71100
DH71120
DH71150
DH71180
DH71200
DH71220
DH71270
DH71330
DH71390
DH71470
DH71560
DH71680
DH71820
DH71999
Fig. of
merit
Q
V
R
= 4 V
f = 50 MH
Z
Type
C
ASE
C
APACITANCE
Cb
Case
Cb= 0.18 pF (3)
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
Cb= 0.18 pF (3)
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
min.
3.0
3.4
3.7
4.0
4.3
4.5
4.6
4.6
4.7
4.7
4.8
4.8
4.9
5.0
5.0
5.1
5.1
5.2
5.2
5.2
5.2
5.2
5.2
5.2
5.2
5.2
5.2
5.2
P
ACKAGED
D
IODES
(1)
Standard cases
Other cases
Tuning
ratio
C
TO
/C
T
30
C
ASE
C
APACITANCE
Cb
Case
Cb= 0.12 pF (3) min.
M208
3.3
M208
3.7
M208
4.0
M208
4.3
M208
4.5
M208
4.6
M208
4.7
M208
4.8
M208
4.8
M208
4.8
M208
4.9
M208
4.9
Cb= 0.2 pF (3)
BH142
BH142
BH142
BH142
BH142
BH142
BH142
BH142
BH142
BH142
BH142
BH142
BH142
BH142
BH142
BH142
4.9
5.0
5.0
5.1
5.1
5.2
5.2
5.2
5.2
5.2
5.2
5.2
5.2
5.2
5.2
5.2
Tuning
ratio
C
TO
/C
T
30
Characteristics at 25°C
Test Conditions
Type
Case
(1) Custom cases available on request
(2) Closer capacitance tolerances available on request
(3) C
T
= Cj + Cb
12-34
Vol. 1
Temperature ranges:
Operating junction (T
j
) : -55° C to +150° C
Storage
: -65° C to +175° C
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