IRG4CC20KBPBF datasheet, PDF - EEWORLD Datasheet

IRG4CC20KBPBF: DescriptionInsulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel, DIE-2; CategoryDiscrete semiconductor The transistor; File Size119KB，1 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/; Environmental Compliance

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IRG4CC20KBPBF Overview

Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel, DIE-2

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	International Rectifier （ Infineon ）
Parts packaging code	DIE
package instruction	UNCASED CHIP, R-XUUC-N2
Contacts	2
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	ULTRA FAST SPEED
Collector-emitter maximum voltage	600 V
Configuration	SINGLE
JESD-30 code	R-XUUC-N2
Number of components	1
Number of terminals	2
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	UNCASED CHIP
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	NO LEAD
Terminal location	UPPER
Maximum time at peak reflow temperature	40
transistor applications	MOTOR CONTROL
Transistor component materials	SILICON

	IRG4CC20KBPBF
Description	Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel, DIE-2
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	International Rectifier （ Infineon ）
Parts packaging code	DIE
package instruction	UNCASED CHIP, R-XUUC-N2
Contacts	2
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	ULTRA FAST SPEED
Collector-emitter maximum voltage	600 V
Configuration	SINGLE
JESD-30 code	R-XUUC-N2
Number of components	1
Number of terminals	2
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	UNCASED CHIP
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	NO LEAD
Terminal location	UPPER
Maximum time at peak reflow temperature	40
transistor applications	MOTOR CONTROL
Transistor component materials	SILICON

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