RF Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, Silicon, PNP
| Parameter Name | Attribute value |
| Maker | Fairchild |
| package instruction | SMALL OUTLINE, R-PDSO-G3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Other features | HIGH SPEED SATURATED SWITCHING |
| Maximum collector current (IC) | 0.2 A |
| Collector-based maximum capacity | 3 pF |
| Collector-emitter maximum voltage | 12 V |
| Configuration | SINGLE |
| JESD-30 code | R-PDSO-G3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Polarity/channel type | PNP |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 700 MHz |
| MMBT4258D87Z | PN4258D75Z | PN4258D26Z | PN4258D74Z | |
|---|---|---|---|---|
| Description | RF Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, Silicon, PNP | RF Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, Silicon, PNP, TO-92 | RF Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, Silicon, PNP, TO-92 | RF Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, Silicon, PNP, TO-92 |
| package instruction | SMALL OUTLINE, R-PDSO-G3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 |
| Reach Compliance Code | unknown | compliant | compliant | compliant |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 |
| Other features | HIGH SPEED SATURATED SWITCHING | HIGH SPEED SATURATED SWITCHING | HIGH SPEED SATURATED SWITCHING | HIGH SPEED SATURATED SWITCHING |
| Maximum collector current (IC) | 0.2 A | 0.2 A | 0.2 A | 0.2 A |
| Collector-based maximum capacity | 3 pF | 3 pF | 3 pF | 3 pF |
| Collector-emitter maximum voltage | 12 V | 12 V | 12 V | 12 V |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE |
| JESD-30 code | R-PDSO-G3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 |
| Number of components | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | ROUND | ROUND | ROUND |
| Package form | SMALL OUTLINE | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
| Polarity/channel type | PNP | PNP | PNP | PNP |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | YES | NO | NO | NO |
| Terminal form | GULL WING | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| Terminal location | DUAL | BOTTOM | BOTTOM | BOTTOM |
| transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON |
| Nominal transition frequency (fT) | 700 MHz | 700 MHz | 700 MHz | 700 MHz |
| Maker | Fairchild | - | Fairchild | Fairchild |
| Is it Rohs certified? | - | conform to | conform to | conform to |
| Minimum DC current gain (hFE) | - | 30 | 30 | 30 |
| JEDEC-95 code | - | TO-92 | TO-92 | TO-92 |
| JESD-609 code | - | e3 | e3 | e3 |
| Maximum operating temperature | - | 140 °C | 140 °C | 140 °C |
| Maximum power dissipation(Abs) | - | 0.6 W | 0.6 W | 0.6 W |
| Terminal surface | - | Matte Tin (Sn) | Matte Tin (Sn) | Matte Tin (Sn) |
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