PN4258D26Z datasheet, PDF - EEWORLD Datasheet

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PN4258D26Z: DescriptionRF Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, Silicon, PNP, TO-92; CategoryDiscrete semiconductor The transistor; File Size739KB，14 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/; Environmental Compliance

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PN4258D26Z Overview

RF Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, Silicon, PNP, TO-92

PN4258D26Z Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Fairchild
package instruction	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	HIGH SPEED SATURATED SWITCHING
Maximum collector current (IC)	0.2 A
Collector-based maximum capacity	3 pF
Collector-emitter maximum voltage	12 V
Configuration	SINGLE
Minimum DC current gain (hFE)	30
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Maximum operating temperature	140 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.6 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	700 MHz

PN4258D26Z Related Products

	PN4258D26Z	PN4258D75Z	MMBT4258D87Z	PN4258D74Z
Description	RF Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, Silicon, PNP, TO-92	RF Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, Silicon, PNP, TO-92	RF Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, Silicon, PNP	RF Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, Silicon, PNP, TO-92
package instruction	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	SMALL OUTLINE, R-PDSO-G3	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	compliant	compliant	unknown	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99
Other features	HIGH SPEED SATURATED SWITCHING	HIGH SPEED SATURATED SWITCHING	HIGH SPEED SATURATED SWITCHING	HIGH SPEED SATURATED SWITCHING
Maximum collector current (IC)	0.2 A	0.2 A	0.2 A	0.2 A
Collector-based maximum capacity	3 pF	3 pF	3 pF	3 pF
Collector-emitter maximum voltage	12 V	12 V	12 V	12 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
JESD-30 code	O-PBCY-T3	O-PBCY-T3	R-PDSO-G3	O-PBCY-T3
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	RECTANGULAR	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	SMALL OUTLINE	CYLINDRICAL
Polarity/channel type	PNP	PNP	PNP	PNP
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	YES	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	GULL WING	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM	DUAL	BOTTOM
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	700 MHz	700 MHz	700 MHz	700 MHz
Is it Rohs certified?	conform to	conform to	-	conform to
Maker	Fairchild	-	Fairchild	Fairchild
Minimum DC current gain (hFE)	30	30	-	30
JEDEC-95 code	TO-92	TO-92	-	TO-92
JESD-609 code	e3	e3	-	e3
Maximum operating temperature	140 °C	140 °C	-	140 °C
Maximum power dissipation(Abs)	0.6 W	0.6 W	-	0.6 W
Terminal surface	Matte Tin (Sn)	Matte Tin (Sn)	-	Matte Tin (Sn)

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