ARIZONA MICROTEK, INC.
AZ10ELT20
AZ100ELT20
CMOS/TTL to Differential PECL Translator
FEATURES
•
•
•
•
•
•
0.5ns Typical Propagation Delay
Differential PECL Outputs
Flow Through Pinouts
Operating Range of +3.0V to +5.5V
Direct Replacement for ON Semiconductor
MC10ELT20 & MC100ELT20
Available in a 3x3mm MLP Package
PACKAGE AVAILABILITY
PACKAGE
SOIC 8
SOIC 8 T&R
SOIC 8 T&R
SOIC 8
SOIC 8 T&R
SOIC 8 T&R
MLP 16
MLP 16 T&R
MLP 16 T&R
TSSOP 8
TSSOP 8 T&R
TSSOP 8 T&R
TSSOP 8
TSSOP 8 T&R
TSSOP 8 T&R
DIE
PART NO.
AZ10ELT20D
AZ10ELT20DR1
AZ10ELT20DR2
AZ100ELT20D
AZ100ELT20DR1
AZ100ELT20DR2
AZ10/100ELT20L
AZ10/100ELT20LR1
AZ10/100ELT20LR2
AZ10ELT20T
AZ10ELT20TR1
AZ10ELT20TR2
AZ100ELT20T
AZ100ELT20TR1
AZ100ELT20TR2
AZ10/100ELT20X
MARKING
AZM10ELT20
AZM10ELT20
AZM10ELT20
AZM100ELT20
AZM100ELT20
AZM100ELT20
AZMT20
AZMT20
AZMT20
AZTLT20
AZTLT20
AZTLT20
AZHLT20
AZHLT20
AZHLT20
N/A
DESCRIPTION
The AZ10/100ELT20 is a CMOS/TTL to differential PECL translator. Because PECL (Positive ECL) levels are
used, only V
CC
and ground are required. The small outline packaging and the single gate of the ELT20 makes it ideal
for those applications where space, performance and low power are at a premium.
The ELT20 is available in both PECL standards: the 10ELT is compatible with PECL 10K logic levels while
the 100ELT is compatible with PECL 100K logic levels.
NOTE: Specifications in PECL tables are valid when thermal equilibrium is established.
PIN DESCRIPTION
PIN
Q, Q
¯
D
GND
V
CC
NC
10K
FUNCTION
Differential PECL Outputs
TTL/CMOS Input
Ground
Positive Supply
No Connect
10K/100K Mode Select
BLOCK DIAGRAM
Q
D
Q
1630 S. STAPLEY DR., SUITE 125
•
MESA, ARIZONA 85204
•
USA
•
(480) 962-5881
•
FAX (480) 890-2541
www.azmicrotek.com
AZ10ELT20
AZ100ELT20
Absolute Maximum Ratings are those values beyond which device life may be impaired.
Symbol
V
CC
V
IN
I
OUT
T
A
T
STG
Characteristic
DC Supply Voltage (Referenced to GND)
Input Voltage
Current Applied to Output in Low Output State
Operating Temperature Range (In Free-Air)
Storage Temperature Range
Value
0 to +8.0
0 to +6.0
50
100
-40 to +85
-65 to +150
Unit
V
V
mA
°C
°C
— Continuous
— Surge
TTL/CMOS INPUT DC CHARACTERISTICS
(GND = 0.0V, V
CC
= +3.0V to +5.5V)
Symbol
I
IH
I
IHH
I
IL
V
IK
V
IH
V
IL
Characteristic
Input HIGH Current
Input HIGH Current
Input LOW Current
Input Clamp Diode Voltage
Input HIGH Voltage
Input LOW Voltage
Min
Typ
Max
15
20
-0.1
-1.2
0.8
Unit
µA
µA
mA
V
V
V
Condition
V
IN
= 2.7V
V
IN
= V
CC
V
IN
= 0.5V
I
IN
= -18mA
2.0
10K LVPECL DC Characteristics
(GND = 0.0V, V
CC
= +3.3V)
Symbol
Characteristic
V
OH
Output HIGH Voltage
1,2
V
OL
Output LOW Voltage
1,2
I
CC
Power Supply Current
3
1.
Output parameters vary 1:1 with V
CC
.
2.
Each output is terminated through a 50Ω resistor to V
CC
– 2V.
3.
I
CC
measurements must be done with outputs open.
Min
2170
1350
-40°C
Typ
Max
2410
1685
16
Min
2245
1350
0°C
Typ
Max
2460
1670
16
Min
2295
1350
25°C
Typ
2400
1550
Max
2490
1670
16
Min
2390
1350
85°C
Typ
Max
2580
1705
16
Unit
mV
mV
mA
10K PECL DC Characteristics
(GND = 0.0V, V
CC
= +5.0V)
Symbol
Characteristic
V
OH
Output HIGH Voltage
1,2
V
OL
Output LOW Voltage
1,2
I
CC
Power Supply Current
3
1.
Output parameters vary 1:1 with V
CC
.
2.
Each output is terminated through a 50Ω resistor to V
CC
– 2V.
3.
I
CC
measurements must be done with outputs open.
Min
3870
3050
-40°C
Typ
Max
4110
3385
16
Min
3945
3050
0°C
Typ
Max
4160
3370
16
Min
3995
3050
25°C
Typ
4100
3250
Max
4190
3370
16
Min
4090
3050
85°C
Typ
Max
4280
3405
16
Unit
mV
mV
mA
100K LVPECL DC Characteristics
(GND = 0.0V, V
CC
= +3.3V)
Symbol
Characteristic
V
OH
Output HIGH Voltage
1,2
V
OL
Output LOW Voltage
1,2
I
CC
Power Supply Current
3
1.
Output parameters vary 1:1 with V
CC
.
2.
Each output is terminated through a 50Ω resistor to V
CC
– 2V.
3.
I
CC
measurements must be done with outputs open.
Min
2160
1400
-40°C
Typ
Max
2420
1745
16
Min
2205
1400
0°C
Typ
Max
2420
1680
16
Min
2235
1400
25°C
Typ
2345
1595
Max
2420
1680
16
Min
2255
1400
85°C
Typ
Max
2420
1680
16
Unit
mV
mV
mA
100K PECL DC Characteristics
(GND = 0.0V, V
CC
= +5.0V)
Symbol
Characteristic
V
OH
Output HIGH Voltage
1,2
V
OL
Output LOW Voltage
1,2
I
CC
Power Supply Current
3
1.
Output parameters vary 1:1 with V
CC
.
2.
Each output is terminated through a 50Ω resistor to V
CC
– 2V.
3.
I
CC
measurements must be done with outputs open.
Min
3860
3100
-40°C
Typ
Max
4120
3445
16
Min
3905
3100
0°C
Typ
Max
4120
3380
16
Min
3935
3100
25°C
Typ
4045
3295
Max
4120
3380
16
Min
3955
3100
85°C
Typ
Max
4120
3380
16
Unit
mV
mV
mA
August 2003 * REV - 8
www.azmicrotek.com
2
AZ10ELT20
AZ100ELT20
AC CHARACTERISTICS
(GND = 0.0V, V
CC
= +3.0V to +5.5V)
Symbol
t
PLH
t
PHL
t
r
/t
f
f
MAX
f
MAX
1.
2.
3.
-40
0
C
0°C
25°C
85°C
Unit
Min
Max
Min
Max
Min
Typ
Max
Min
Max
Propagation Delay
1
0.2
0.7
0.2
0.7
0.2
0.4
0.7
0.2
0.7
ns
Propagation Delay
1
0.2
0.7
0.2
0.7
0.2
0.4
0.7
0.2
0.7
ns
Output Rise/Fall Time
0.25
0.7
0.25
0.7
0.25
0.4
0.7
0.25
0.7
ns
Maximum Frequency
2
350
350
350
350
MHz
Maximum Frequency
3
670
800
800
800
MHz
Propagation delay is measured from +1.5V on the input to 50% of the PECL output swing. Input rise/fall times are < 1ns/V.
Full swing PECL output.
Output at –3 dB.
Characteristic
Condition
20-80%
NC
NC
V
CC
14
NC
16
Q
1
2
3
4
5
15
13
12
NC
D
NC
MLP 16 Package and DIE: 10K/100K
Selection
Connect pin/pad 10K to GND to select
10K operation. Float (NC) pin/pad 10K
to select 100K operation. GND
connection must be less than 1Ω.
Pin 8 of the MLP 16 package may be
connected to pin 7 (GND) with no effect
on the circuit.
NC
NC
Q
MLP
16
6
7
8
11
10
9
NC
NC
10K
GND
NC
Top View
850
Large Signal Performance
NC
1
8
VCC
Single ended Output (mV p-p)
750
650
Q
2
Q
3
SOIC 8
TSSOP 8
7
D
550
Input: 150mV p-p Sine
Wave Single Ended
450
6
NC
350
250
NC
4
5
GND
150
1
10
100
Frequency (MHz)
1000
10000
August 2003 * REV - 8
www.azmicrotek.com
3
AZ10ELT20
AZ100ELT20
DIE PAD COORDINATES
AZ10/100ELT20 DIE:
ELT20-22
A
B
C
D
M
L
K
J
DIE SIZE: 950u X 940u
DIE THICKNESS: 14 mils
BOND PAD: 85u X 85u
I
H
G
E
F
Note: Other die thicknesses available. Contact factory for further information.
PAD CENTER COORDINATES
NAME
A
B
C
D
E
F
G
H
I
J
K
L
M
NC = No connect, leave open.
PAD DESIGNATION
NC
NC
D
NC
V
CC
V
CC
Q
Q
¯
NC
NC
NC
10K
GND
X(Microns)
-342.5
-342.5
-342.5
-342.5
-33.5
126.5
312.5
312.5
312.5
312.5
302.5
142.5
-140.5
Y(Microns)
312.5
144.5
-87.0
-255.0
-312.5
-312.5
-248.5
-98.5
51.5
201.5
342.5
342.5
342.5
August 2003 * REV - 8
www.azmicrotek.com
4
AZ10ELT20
AZ100ELT20
PACKAGE DIAGRAM
SOIC 8
NOTES:
1.
DIMENSIONS D AND E DO NOT
INCLUDE MOLD PROTRUSION.
2.
MAXIMUM MOLD PROTRUSION
FOR D IS 0.15mm.
3.
MAXIMUM MOLD PROTRUSION
FOR E IS 0.25mm.
DIM
A
A
1
A
2
A
3
b
p
c
D
E
e
H
E
L
L
p
Q
v
w
y
Z
θ
MILLIMETERS
MIN
MAX
1.35
1.75
0.10
0.25
1.28
1.57
0.25
0.36
0.49
0.19
0.25
4.80
5.00
3.80
4.00
1.27
5.80
6.20
1.05
0.40
1.27
0.60
0.70
0.25
0.25
0.10
0.30
0.70
O
8
O
0
INCHES
MIN
MAX
.053
0.069
0.004
0.010
0.050
0.062
0.01
0.014
0.019
0.0075
0.0100
0.19
0.20
0.15
0.16
0.050
0.228
0.244
0.041
0.016
0.050
0.024
0.028
0.01
0.01
0.004
0.012
0.028
O
0
8
O
August 2003 * REV - 8
www.azmicrotek.com
5
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