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M58BW016DT70ZA3FF

Description
Flash, 512KX32, 70ns, PBGA80, 10 X 12 MM, 1 MM PITCH, ROHS COMPLIANT, LBGA-80
Categorystorage    storage   
File Size628KB,70 Pages
ManufacturerNumonyx ( Micron )
Websitehttps://www.micron.com
Download Datasheet Parametric View All

M58BW016DT70ZA3FF Overview

Flash, 512KX32, 70ns, PBGA80, 10 X 12 MM, 1 MM PITCH, ROHS COMPLIANT, LBGA-80

M58BW016DT70ZA3FF Parametric

Parameter NameAttribute value
MakerNumonyx ( Micron )
Parts packaging codeBGA
package instruction10 X 12 MM, 1 MM PITCH, ROHS COMPLIANT, LBGA-80
Contacts80
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum access time70 ns
Other featuresSYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK
startup blockTOP
JESD-30 codeR-PBGA-B80
JESD-609 codee1
length12 mm
memory density16777216 bit
Memory IC TypeFLASH
memory width32
Number of functions1
Number of terminals80
word count524288 words
character code512000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
organize512KX32
Package body materialPLASTIC/EPOXY
encapsulated codeLBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, LOW PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
Programming voltage3 V
Certification statusNot Qualified
Maximum seat height1.6 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelAUTOMOTIVE
Terminal surfaceTIN SILVER COPPER
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature40
typeNOR TYPE
width10 mm
M58BW016DB M58BW016DT
M58BW016FT M58BW016FB
16 Mbit (512 Kb x 32, boot block, burst)
3 V supply Flash memories
Features
Supply voltage
– V
DD
= 2.7 V to 3.6 V for Program, Erase
and Read
– V
DDQ
= V
DDQIN
= 2.4 V to 3.6 V for I/O
buffers
– V
PP
= 12 V for Fast Program (optional)
High performance
– Access times: 70, 80 ns
– 56 MHz effective zero wait-state Burst
Read
– Synchronous Burst Read
– Asynchronous Page Read
Hardware block protection
– WP pin for Write Protect of the 4 outermost
parameter blocks and all main blocks
– RP pin for Write Protect of all blocks
Optimized for FDI drivers
– Fast Program / Erase Suspend latency
time < 6 µs
– Common Flash interface
Memory blocks
– 8 parameters blocks (top or bottom)
– 31 main blocks
Low power consumption
– 5 µA typical Deep Power-down
– 60 µA typical standby for M58BW016DT/B
150 µA typical standby for M58BW016FT/B
– Automatic standby after Asynchronous
Read
Electronic signature
– Manufacturer code: 20h
– Top device code: 8836h
– Bottom device code: 8835h
ECOPACK
®
packages available
PQFP80 (T)
LBGA
LBGA80 10 × 12 mm
January 2008
Rev 15
1/70
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