VISHAY
BC856 to BC859
Vishay Semiconductors
Small Signal Transistors (PNP)
Features
• PNP Silicon Epitaxial Planar Transistors for
switching and AF amplifier applications.
• Especially suited for automatic insertion in thick
and thin-film circuits.
• These transistors are subdivided into three groups
A, B, and C) according to their current gain. The
type BC856 is available in groups A and B, how-
ever, the types
BC857, BC558 and BC859 can be supplied in all
three groups. The BC849 is a low noise type.
• As complementary types, the NPN transistors
BC846...BC849 are recomended.
2
1
1
B
3
18978
C 3
E 2
Mechanical Data
Case:
SOT-23 Plastic case
Weight:
approx. 8.8 mg
Marking:
BC856A = 3A
BC858A = 3J
BC856B = 3B
BC858B = 3K
BC858C = 3L
BC857A = 3E
BC857B = 3F
BC857C = 3G
BC859A = 4A
BC859B = 4B
BC859C = 4C
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Pinning:
1 = Base, 2 = Emitter, 3 = Collector
Document Number 85135
Rev. 1.2, 08-Sep-04
www.vishay.com
1
BC856 to BC859
Vishay Semiconductors
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Collector - base voltage
Test condition
Part
BC856
BC857
BC858
BC859
Collector - emitter voltage
(base shorted)
BC856
BC857
BC858
BC859
Collector - emitter voltage
(base open)
BC856
BC857
BC858
BC859
Emitter - base voltage
Collector current
Peak colector current
Peak base current
Peak emitter current
Power dissipation
1)
VISHAY
Symbol
- V
CBO
- V
CBO
- V
CBO
- V
CBO
- V
CES
- V
CES
- V
CES
- V
CES
- V
CEO
- V
CEO
- V
CEO
- V
CEO
- V
EBO
- I
C
- I
CM
- I
BM
I
EM
Value
80
50
30
30
80
50
30
30
65
45
30
30
5
100
200
200
200
310
1)
Unit
V
V
V
V
V
V
V
V
V
V
V
V
V
mA
mA
mA
mA
mW
T
amb
= 25 °C
P
tot
Device on fiberglass substrate, see layout on third page.
Maximum Thermal Resistance
Parameter
Thermal resistance junction to
ambient air
Thermal resistance junction to
substrate backside
Junction temperature
Storage temperature range
1)
Test condition
Symbol
R
θJA
R
θSB
T
j
T
S
Value
320
1)
450
1)
150
- 65 to + 150
Unit
°C/W
°C/W
°C
°C
Device on fiberglass substrate, see layout on third page.
Electrical DC Characteristics
Parameter
Small signal current gain
(current gain group A)
Small signal current gain
(current gain group B)
Small signal current gain
(current gain group C)
Input impedance (current gain
group A)
Input impedance (current gain
group B)
Input impedance (current gain
group C)
Test condition
- V
CE
= 5 V, - I
C
= 2 mA, f = 1 kHz
- V
CE
= 5 V, - I
C
= 2 mA, f = 1 kHz
- V
CE
= 5 V, - I
C
= 2 mA, f = 1 kHz
- V
CE
= 5 V, - I
C
= 2 mA, f = 1 kHz
- V
CE
= 5 V, - I
C
= 2 mA, f = 1 kHz
- V
CE
= 5 V, - I
C
= 2 mA, f = 1 kHz
Part
Symbol
h
fe
h
fe
h
fe
h
ie
h
ie
h
ie
h
oe
1.6
3.2
6
Min
Typ
220
330
600
2.7
4.5
8.7
18
4.5
8.5
15
30
kΩ
kΩ
kΩ
µS
Max
Unit
Output admittance (current gain - V
CE
= 5 V, - I
C
= 2 mA, f = 1 kHz
group A)
www.vishay.com
2
Document Number 85135
Rev. 1.2, 08-Sep-04
VISHAY
Parameter
Test condition
Part
Symbol
h
oe
h
oe
h
re
h
re
h
re
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
V
CEsat
V
CEsat
V
BEsat
V
BEsat
V
BE
V
BE
BC856
BC857
BC858
BC859
- V
CE
= 80 V, T
j
= 125 °C
- V
CE
= 50 V, T
j
= 125 °C
- V
CE
= 30 V, T
j
= 125 °C
Collector-base cut-off current
- V
CB
= 30 V
- V
CB
= 30 V, T
j
= 150 °C
BC857
BC857
BC858
BC859
I
CES
I
CES
I
CES
I
CES
I
CES
I
CES
I
CES
I
CES
I
CBO
I
CBO
BC856 to BC859
Vishay Semiconductors
Min
Typ
30
60
1.5 x 10
-4
2 x 10
-4
3 x 10
-4
90
150
270
110
200
420
180
290
520
90
250
700
900
600
660
0.2
0.2
0.2
0.2
750
820
15
15
15
15
4
4
4
4
15
5
220
450
800
300
650
mV
mV
mV
mV
mV
mV
nA
nA
nA
nA
µA
µA
µA
µA
µA
µA
Max
60
110
Unit
µS
µS
Output admittance (current gain - V
CE
= 5 V, - I
C
= 2 mA, f = 1 kHz
group B)
Output admittance (current gain - V
CE
= 5 V, - I
C
= 2 mA, f = 1 kHz
group C)
Reverse voltage transfer ratio
(current gain group A)
Reverse voltage transfer ratio
(current gain group B)
Reverse voltage transfer ratio
(current gain group C)
DC current gain (current gain
group A)
DC current gain (current gain
group B)
DC current gain (current gain
group C)
DC current gain (current gain
group A)
DC current gain (current gain
group B)
DC current gain (current gain
group C)
Collector saturation voltage
Base saturation voltage
Base - emiter voltage
Collector-emitter cut-off current
- V
CE
= 5 V, - I
C
= 2 mA, f = 1 kHz
- V
CE
= 5 V, - I
C
= 2 mA, f = 1 kHz
- V
CE
= 5 V, - I
C
= 2 mA, f = 1 kHz
- V
CE
= 5 V, - I
C
= 10
µA
- V
CE
= 5 V, - I
C
= 10
µA
- V
CE
= 5 V, - I
C
= 10
µA
- V
CE
= 5 V, - I
C
= 2 mA
- V
CE
= 5 V, - I
C
= 2 mA
- V
CE
= 5 V, - I
C
= 2 mA
- I
C
= 10 mA, - I
B
= 0.5 mA
- I
C
= 100 mA, - I
B
= 5 mA
- I
C
= 10 mA, - I
B
= 0.5 mA
- I
C
= 100 mA, - I
B
= 5 mA
- V
CE
= 5 V, - I
C
= 2 mA
- V
CE
= 5 V, - I
C
= 10 mA
- V
CE
= 80 V
- V
CE
= 50 V
- V
CE
= 30 V
Document Number 85135
Rev. 1.2, 08-Sep-04
www.vishay.com
3
BC856 to BC859
Vishay Semiconductors
Electrical AC Characteristics
Parameter
Gain bandwidth product
Collector - base capacitance
Noise figure
Test condition
- V
CE
= 5 V, - I
C
= 10 mA,
f = 100 MHz
- V
CB
= 10 V, f = 1 MHz
- V
CE
= 5 V, - I
C
= 200
µA,
R
G
= 2 kΩ, f = 1 kHz,
∆f
= 200 Hz
BC856
Part
Symbol
f
T
C
CBO
F
2
Min
Typ
150
6
10
Max
VISHAY
Unit
MHz
pF
dB
BC857
BC858
BC859
- V
CE
= 5 V, - I
C
= 200
µA,
R
G
= 2 kΩ,
f = (30 to 15000) Hz
BC859
F
F
F
F
2
2
1
1.2
10
10
4
4
dB
dB
dB
dB
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Document Number 85135
Rev. 1.2, 08-Sep-04
VISHAY
Layout for R
thJA
test
Thickness: Fiberglass 1.5 mm (0.059 in.)
Copper leads 0.3 mm (0.012 in.)
BC856 to BC859
Vishay Semiconductors
7.5 (0.3)
3 (0.12)
1 (0.4)
12 (0.47)
15 (0.59)
0.8 (0.03)
2 (0.8)
1 (0.4)
2 (0.8)
5 (0.2)
1.5 (0.06)
5.1 (0.2)
17451
Typical Characteristics
(T
amb
= 25
°C
unless otherwise specified)
mW
500
400
P
tot 300
200
100
½
=0
0
19195
-3
10
0.5
0.2
10
rthSB
R thSB
-1
0.1
0.05
0.02
0.01
0.005
tp
½=
T
tp
T
10
-2
PI
0
100
TSB
200 °C
19191
10
-7
10 10
-6
10
-5
10
-4
10
-3
t
p
10
-2
10
-1
1s
Figure 1. Admissible Power Dissipation vs. Temperature of
Substrate Backside
Figure 2. Pulse Thermal Resistance vs. Pulse Duration
(normalized)
Document Number 85135
Rev. 1.2, 08-Sep-04
www.vishay.com
5
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