+85 C for REF01CP and REF01CS, unless otherwise noted.)
Min
REF01C
Typ
Max
0.14
20
0.45
65
Unit
%
ppm/°C
Conditions
R
P
= 10 kΩ
V
IN
= 13 V to 30 V
I
L
= 0 to 5 mA
0.7
0.011
0.008
0.018
0.018
ppm/%
%/V
%/mA
NOTES
1
Sample tested.
2
Line and load regulation specifications include the effect of self-heating.
3
Guaranteed by design.
4
During sink current test the device meets the output voltage specified.
5
V
OT
is defined as the absolute difference between the maximum output voltage and the minimum
output voltage over the specified temperature range expressed as a percentage of 10 V:
∆V
OT
=
6
V
MAX
–
V
MIN
10
V
×
100
V
OT
specification applies trimmed to +10,000 V or untrimmed.
TCV
O
is defined as Var divided by the temperature range, i.e.
7
TCV
O
0
to
+
70
C
=
(
(
o
o
)
∆
V
OT
0
o
to
+
70
o
C
70
C
o
(
)
and
)
TCV
O
−
55
to
+
125
C
=
Specifications are subject to change without notice.
15V
2
V
IN
V
O
6
OUTPUT
o
o
)
∆
V
OT
−
55
o
to
+
125
o
C
180
o
C
(
The REF01 trim terminal can be used to adjust the output
voltage over a 10 V
±
300 mV range. This feature allows the
system designer to trim system errors by setting the reference to
a voltage other than 10 V. Of course, the output can also be set
to exactly 10.000 V or to 10.240 V for binary applications.
Adjustment of the output does not significantly affect the tem-
perature performance of the device. The temperature coefficient
change is approximately 0.7 ppm/°C for 100 mV of output
adjustment.
REF01
TRIM
GND
4
5
10k
2
6
Figure 1. Output Adjustment
2. INPUT VOLTAGE (V
IN
)
4. GROUND
5. TRIM
6. OUTPUT VOLTAGE (V
OUT
)
+18V
V
IN
4
5
REF01
DIE SIZE 0.074 0.048 INCH, 3552 SQUARE MILS
(1.88 1.22 mm, 2.29 SQUARE mm)
GND
–18V
Figure 3. Dice Characteristics (125
C
Tested Dice Available)
Figure 2. Burn-In Circuit
REV. C
–3–
REF01
WAFER TEST LIMITS
Parameter
Output Voltage
Output Adjustment
Range
Line Regulation
Symbol
V
O
V
TRIM
(@ V
IN
= 15 V, T
A
= 25 C for REF01N and REF01G devices, T
A
= 125 C for REF01NT and REF01GT devices,
unless otherwise noted.)*
Conditions
I
L
= 0
R
P
= 10 kΩ
V
IN
= 13 V to 33 V
REF01NT
Limit
10.05
9.95
REF01N
Limit
10.03
9.97
±
3.0
0.01
REF01GT
Limit
10.10
9.90
REF01G
Limit
10.05
9.95
±
3.0
0.01
Unit
V max
V min
% min
%/V max
0.015
0.015
*Electrical
tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed
for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assembly and testing.
TYPICAL ELECTRICAL CHARACTERISTICS
(@ V
Parameter
Load Regulation
Symbol
Conditions
I
L
= 0 mA to 10 mA
I
L
= 0 mA to 8 mA,
NT, GT @ 125°C
e
n p-p
t
ON
I
SY
I
L
I
S
I
SC
TCV
O
V
O
= 0
0.1 Hz to 10 Hz
To
±
0.1% of Final
Value NT, GT @
125°C
No Load, NT,
GT @ 125°C
IN
= 15 V, T
A
= 25 C, unless otherwise noted.)*
REF01N
Typical
REF01GT
Typical
REF01G
Typical
Unit
REF01NT
Typical
0.007
20
0.005
20
0.009
20
0.006
20
%/mA
µV
p-p
µs
mA
mA
mA
mA
Output Voltage
Noise
Turn-On Settling
Time
Quiescent Current
Load Current
Sink Current
Short Circuit
Current
Output Voltage
Temperature
Coefficient
7.5
1.4
21
–0.5
30
5.0
1.0
21
–0.5
30
7.5
1.4
21
–0.5
30
5.0
1.0
21
–0.5
30
10
10
10
10
ppm/°C
*For
25°C specifications of REF01NT and REF01GT, see REF01N and REF01G, respectively.
As shown in the figure, I converted +5V to -5V through MAX735, and then supplied the positive and negative 5V to the dual power amplifier. Once powered on, -5V was pulled down to 0V. After disconnecti...
Designers of Internet of Things (IoT) products are currently gravitating toward wireless connectivity based on Wi-Fi because it is widely deployed and well understood. However, any type of RF function...
[align=left][font=-apple-system,][color=#000000] Recently, a project was deployed. Party A used a virtualization platform and the servers provided were all virtualized cloned machines. The default par...
OFweek Cup · OFweek 2023 China
Robot
Industry Annual Selection (abbreviated as OFweek Robot Awards 2023) is jointly organized by OFweek, China's high-tech industry portal, and its authorita...[Details]
0 Introduction
At present, in the field of measurement, pulse signals can be used as known excitation signals and unknown measured signals. When used as unknown measured signals, the testing of...[Details]
Recently, at the Smart Highway Technology Development Forum held at the 24th China Highway Informatization Conference, Huawei officially released the new generation of ultra-long-range, high-precisio...[Details]
HD7279A hardware circuit diagram HD7279A is a special intelligent control chip for managing keyboards and LED displays. It can manage and drive 8-bit common cathode LED displays or 64 LED light-emi...[Details]
The LT4180 is a full-featured
power supply
controller
that integrates a 5mA optical isolator, undervoltage/overvoltage lockout, soft start, and ±1% internal reference voltage. The LT4...[Details]
Application of interrupts and digital tubes - "9999" countdown table #include reg52.h unsigned char code LedChar ={//Numbers displayed by the digital tube 0~9 0XC0,0XF9,0XA4,0XB0,0X99,0X92,0X82,0...[Details]
State-of-the-art machine learning algorithms can extract two-dimensional objects from photos and faithfully render them in three dimensions. This technology can be applied to augmented reality ap...[Details]
This afternoon, Meizu Technology’s official Weibo account announced: The Meizu 18 series will support 2K+120 frame dual-opening trial mode through OTA, bringing a more extreme silky experience. This ...[Details]
Shanghai, China, August 25, 2021 - Recently, ViewSonic announced the release of a high-end VP series monitor, the VP3268a-4K. The new VP3268a-4K has a 31.5-inch large screen 4K professional monitor w...[Details]
Please do not blame me for the poor hand-drawn schematic diagram of the DIY laser engraving machine by others. The circuit schematic diagram in the experimental exercise is as follows: The microcon...[Details]
Ion beam machining (IBM) is to use ions generated by an ion source (ion gun) under vacuum conditions to accelerate and focus to form a high-energy ion beam and project it onto the surface of the wo...[Details]
On January 20, 2022, the relocation ceremony of Siyuan Semiconductor's headquarters was grandly held on the 19th floor of Caixun Technology Building, Nanshan District, Shenzhen. The company's leaders...[Details]
An electric car that can run 160 kilometers on a single charge, a fire patrol truck charged by solar energy... In Tianchang City, a group of new energy, electronic information, equipment manufactur...[Details]
In a recent project, the blogger encountered a function that required the use of USART serial port for communication. First of all, there is one very different thing between USART and UART: UART: uni...[Details]
In order to further optimize the company's production capacity layout and enhance the influence and comprehensive competitiveness of the company's business, Guangzhou Penghui Energy Technology Co.,...[Details]