IDT71V3576S150BQG datasheet, PDF

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IDT71V3576S150BQG: DescriptionCache SRAM, 128KX36, 3.8ns, CMOS, PBGA165, ROHS COMPLIANT, FBGA-165; Categorystorage storage; File Size624KB，22 Pages; ManufacturerIDT (Integrated Device Technology); Environmental Compliance

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IDT71V3576S150BQG Overview

Cache SRAM, 128KX36, 3.8ns, CMOS, PBGA165, ROHS COMPLIANT, FBGA-165

IDT71V3576S150BQG Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	IDT (Integrated Device Technology)
Parts packaging code	BGA
package instruction	ROHS COMPLIANT, FBGA-165
Contacts	165
Reach Compliance Code	unknown
ECCN code	3A991.B.2.A
Maximum access time	3.8 ns
Other features	PIPELINED ARCHITECTURE
Maximum clock frequency (fCLK)	150 MHz
I/O type	COMMON
JESD-30 code	R-PBGA-B165
JESD-609 code	e1
length	15 mm
memory density	4718592 bit
Memory IC Type	CACHE SRAM
memory width	36
Humidity sensitivity level	3
Number of functions	1
Number of terminals	165
word count	131072 words
character code	128000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	128KX36
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TBGA
Encapsulate equivalent code	BGA165,11X15,40
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
power supply	3.3 V
Certification status	Not Qualified
Maximum seat height	1.2 mm
Maximum standby current	0.03 A
Minimum standby current	3.14 V
Maximum slew rate	0.25 mA
Maximum supply voltage (Vsup)	3.465 V
Minimum supply voltage (Vsup)	3.135 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form	BALL
Terminal pitch	1 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	30
width	13 mm

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128K x 36, 256K x 18

3.3V Synchronous SRAMs

3.3V I/O, Pipelined Outputs

Burst Counter, Single Cycle Deselect

◆

IDT71V3576S

IDT71V3578S

IDT71V3576SA

IDT71V3578SA

Features

128K x 36, 256K x 18 memory configurations

Supports high system speed:

Commercial and Industrial:

– 150MHz 3.8ns clock access time

– 133MHz 4.2ns clock access time

LBO

input selects interleaved or linear burst mode

Self-timed write cycle with global write control (GW), byte write

enable (BWE), and byte writes (BWx)

3.3V core power supply

Power down controlled by ZZ input

3.3V I/O

Optional - Boundary Scan JTAG Interface (IEEE 1149.1

compliant)

Packaged in a JEDEC Standard 100-pin plastic thin quad

flatpack (TQFP), 119 ball grid array (BGA) and 165 fine pitch ball

grid array (fBGA)

Description

The IDT71V3576/78 are high-speed SRAMs organized as

128K x 36/256K x 18. The IDT71V3576/78 SRAMs contain write, data,

address and control registers. Internal logic allows the SRAM to generate

a self-timed write based upon a decision which can be left until the end of

the write cycle.

The burst mode feature offers the highest level of performance to the

system designer, as the IDT71V3576/78 can provide four cycles of data

for a single address presented to the SRAM. An internal burst address

counter accepts the first cycle address from the processor, initiating the

access sequence. The first cycle of output data will be pipelined for one

cycle before it is available on the next rising clock edge. If burst mode

operation is selected (ADV=LOW), the subsequent three cycles of output

data will be available to the user on the next three rising clock edges. The

order of these three addresses are defined by the internal burst counter

and the

LBO

input pin.

The IDT71V3576/78 SRAMs utilize IDT’s latest high-performance

CMOS process and are packaged in a JEDEC standard 14mm x 20mm

100-pin thin plastic quad flatpack (TQFP) as well as a 119 ball grid array

(BGA) and a 165 fine pitch ball grid array (fBGA).

◆

Pin Description Summary

-A

BWE

(1)

CLK

ADV

ADSC

ADSP

LBO

TMS

TDI

TCK

TDO

TRST

I/O

-I/O

, I/O

-I/O

, V

DDQ

Address Inputs

Chip Enable

Chip Selects

Output Enable

Global Write Enable

Byte Write Enable

Individual Byte Write Selects

Clock

Burst Address Advance

Address Status (Cache Controller)

Address Status (Processor)

Linear / Interleaved Burst Order

Test Mode Select

Test Data Input

Test Clock

Test Data Output

JTAG Reset (Optional)

Sleep Mode

Data Input / Output

Core Power, I/O Power

Ground

Input

Output

Input

I/O

Supply

Synchronous

Asynchronous

Synchronous

N/A

Synchronous

N/A

Synchronous

Asynchronous

Synchronous

N/A

5279 tbl 01

NOTE:

and

are not applicable for the IDT71V3578.

JANUARY 2004

DSC-5279/04

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