MB811L643242B-10LFN datasheet, PDF

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MB811L643242B-10LFN: DescriptionSynchronous DRAM, 2MX32, 8ns, CMOS, PDSO86, 0.400 INCH, PLASTIC, TSOP2-86; Categorystorage storage; File Size765KB，45 Pages; ManufacturerFUJITSU; Websitehttp://edevice.fujitsu.com/fmd/en/index.html

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MB811L643242B-10LFN Overview

Synchronous DRAM, 2MX32, 8ns, CMOS, PDSO86, 0.400 INCH, PLASTIC, TSOP2-86

MB811L643242B-10LFN Parametric

Parameter Name	Attribute value
Maker	FUJITSU
package instruction	TSOP2,
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	8 ns
Other features	AUTO/SELF REFRESH
JESD-30 code	R-PDSO-G86
length	22.22 mm
memory density	67108864 bit
Memory IC Type	SYNCHRONOUS DRAM
memory width	32
Number of functions	1
Number of ports	1
Number of terminals	86
word count	2097152 words
character code	2000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	2MX32
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP2
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Certification status	Not Qualified
Maximum seat height	1.2 mm
self refresh	YES
Maximum supply voltage (Vsup)	2.7 V
Minimum supply voltage (Vsup)	2.3 V
Nominal supply voltage (Vsup)	2.5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
width	10.16 mm

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FUJITSU SEMICONDUCTOR

DATA SHEET

DS05-11052-1E

MEMORY

CMOS

512 K

32 BIT

SYNCHRONOUS DYNAMIC RAM

MB811L643242B

-10/-12/-15/-10L/-12L/-15L

CMOS 4-Bank

524,288-Word

32 Bit

Synchronous Dynamic Random Access Memory

DESCRIPTION

The Fujitsu MB811L643242B is a CMOS Synchronous Dynamic Random Access Memory (SDRAM) containing

67,108,864 memory cells accessible in a 32-bit format. The MB811L643242B features a fully synchronous

operation referenced to a positive edge clock whereby all operations are synchronized at a clock input which

enables high performance and simple user interface coexistence. The MB811L643242B SDRAM is designed to

reduce the complexity of using a standard dynamic RAM (DRAM) which requires many control signal timing

constraints, and may improve data bandwidth of memory as much as 5 times more than a standard DRAM.

The MB811L643242B is ideally suited for workstations, personal computers, laser printers, high resolution graphic

adapters/accelerators and other applications where an extremely large memory and bandwidth are required and

where a simple interface is needed.

PRODUCT LINE & FEATURES

Parameter

CL - t

RCD

- t

Clock Frequency

Burst Mode Cycle Time

Access Time from Clock

CL = 2

CL = 3

CL = 2

CL = 3

CL = 2

CL = 3

MB811L643242B

-10/-10L

-12/-12L

-15/-15L

2 - 2 - 2 clk min.

3 - 3 - 3 clk min.

100 MHz max.

84 MHz max.

67 MHz max.

15 ns min.

17 ns min.

20ns min.

10 ns min.

12 ns min.

15 ns min.

8 ns max.

130 mA max.

120 mA max.

110 mA max.

2 mA max.(std version) / 1.5 mA max.(L version)

2 mA max.(std. version) / 0.5 mA max.(L version)

Operating Current

Power Down Mode Current (I

CC2P

)

Self Refresh Current (I

CC6

)

•

Single +2.5 V Supply ±0.2 V tolerance

LVTTL compatible I/O interface

4 K refresh cycles every 64 ms

Four bank operation

Burst read/write operation and burst

read/single write operation capability

• Programmable burst type, burst length, and

CAS latency

• Auto-and Self-refresh (every 15.6

µs)

• CKE power down mode

• Output Enable and Input Data Mask

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Maker	FUJITSU	FUJITSU	FUJITSU	FUJITSU	FUJITSU	FUJITSU
package instruction	TSOP2,	TSOP2,	TSOP2,	TSOP2,	TSOP2,	TSOP2,
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
access mode	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
Maximum access time	8 ns	8 ns	8 ns	8 ns	8 ns	8 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
JESD-30 code	R-PDSO-G86	R-PDSO-G86	R-PDSO-G86	R-PDSO-G86	R-PDSO-G86	R-PDSO-G86
length	22.22 mm	22.22 mm	22.22 mm	22.22 mm	22.22 mm	22.22 mm
memory density	67108864 bit	67108864 bit	67108864 bit	67108864 bit	67108864 bit	67108864 bit
Memory IC Type	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM
memory width	32	32	32	32	32	32
Number of functions	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1
Number of terminals	86	86	86	86	86	86
word count	2097152 words	2097152 words	2097152 words	2097152 words	2097152 words	2097152 words
character code	2000000	2000000	2000000	2000000	2000000	2000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	2MX32	2MX32	2MX32	2MX32	2MX32	2MX32
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm
self refresh	YES	YES	YES	YES	YES	YES
Maximum supply voltage (Vsup)	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V
Minimum supply voltage (Vsup)	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V
Nominal supply voltage (Vsup)	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
surface mount	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal pitch	0.5 mm	0.5 mm	0.5 mm	0.5 mm	0.5 mm	0.5 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
width	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm

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