P4C198A-55CM datasheet, PDF - EEWORLD Datasheet

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P4C198A-55CM: DescriptionStandard SRAM, 16KX4, 55ns, CMOS, CDIP24; Categorystorage storage; File Size598KB，9 Pages; ManufacturerPyramid Semiconductor Corporation; Websitehttp://www.pyramidsemiconductor.com/

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P4C198A-55CM Overview

Standard SRAM, 16KX4, 55ns, CMOS, CDIP24

P4C198A-55CM Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Pyramid Semiconductor Corporation
package instruction	DIP, DIP24,.3
Reach Compliance Code	unknown
Maximum access time	55 ns
I/O type	COMMON
JESD-30 code	R-XDIP-T24
JESD-609 code	e0
memory density	65536 bit
Memory IC Type	STANDARD SRAM
memory width	4
Number of terminals	24
word count	16384 words
character code	16000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	16KX4
Output characteristics	3-STATE
Package body material	CERAMIC
encapsulated code	DIP
Encapsulate equivalent code	DIP24,.3
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
power supply	5 V
Certification status	Not Qualified
Maximum standby current	0.02 A
Minimum standby current	4.5 V
Maximum slew rate	0.12 mA
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL

P4C198A-55CM Related Products

	P4C198A-55CM	P4C198AL-35JC	P4C198L-20LC	P4C198-17CC	P4C198-17JC	P4C198-17LC	P4C198-55CM	P4C198AL-20CC	P4C198AL-35CC
Description	Standard SRAM, 16KX4, 55ns, CMOS, CDIP24	Standard SRAM, 16KX4, 35ns, CMOS, PDSO24	Standard SRAM, 16KX4, 20ns, CMOS, CQCC28	Standard SRAM, 16KX4, 17ns, CMOS, CDIP24	Standard SRAM, 16KX4, 17ns, CMOS, PDSO24	Standard SRAM, 16KX4, 17ns, CMOS, CQCC28	Standard SRAM, 16KX4, 55ns, CMOS, CDIP24	Standard SRAM, 16KX4, 20ns, CMOS, CDIP24	Standard SRAM, 16KX4, 35ns, CMOS, CDIP24
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	Pyramid Semiconductor Corporation	Pyramid Semiconductor Corporation	Pyramid Semiconductor Corporation	Pyramid Semiconductor Corporation	Pyramid Semiconductor Corporation	Pyramid Semiconductor Corporation	Pyramid Semiconductor Corporation	Pyramid Semiconductor Corporation	Pyramid Semiconductor Corporation
package instruction	DIP, DIP24,.3	SOJ, SOJ24,.34	QCCN, LCC28,.35X.55	DIP, DIP24,.3	SOJ, SOJ24,.34	QCCN, LCC28,.35X.55	DIP, DIP24,.3	DIP, DIP24,.3	DIP, DIP24,.3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
Maximum access time	55 ns	35 ns	20 ns	17 ns	17 ns	17 ns	55 ns	20 ns	35 ns
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-XDIP-T24	R-PDSO-J24	R-XQCC-N28	R-XDIP-T24	R-PDSO-J24	R-XQCC-N28	R-XDIP-T24	R-XDIP-T24	R-XDIP-T24
JESD-609 code	e0	e0	e0	e0	e0	e0	e0	e0	e0
memory density	65536 bit	65536 bit	65536 bit	65536 bit	65536 bit	65536 bit	65536 bit	65536 bit	65536 bit
Memory IC Type	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	4	4	4	4	4	4	4	4	4
Number of terminals	24	24	28	24	24	28	24	24	24
word count	16384 words	16384 words	16384 words	16384 words	16384 words	16384 words	16384 words	16384 words	16384 words
character code	16000	16000	16000	16000	16000	16000	16000	16000	16000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	125 °C	70 °C	70 °C	70 °C	70 °C	70 °C	125 °C	70 °C	70 °C
organize	16KX4	16KX4	16KX4	16KX4	16KX4	16KX4	16KX4	16KX4	16KX4
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	CERAMIC	PLASTIC/EPOXY	CERAMIC	CERAMIC	PLASTIC/EPOXY	CERAMIC	CERAMIC	CERAMIC	CERAMIC
encapsulated code	DIP	SOJ	QCCN	DIP	SOJ	QCCN	DIP	DIP	DIP
Encapsulate equivalent code	DIP24,.3	SOJ24,.34	LCC28,.35X.55	DIP24,.3	SOJ24,.34	LCC28,.35X.55	DIP24,.3	DIP24,.3	DIP24,.3
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	SMALL OUTLINE	CHIP CARRIER	IN-LINE	SMALL OUTLINE	CHIP CARRIER	IN-LINE	IN-LINE	IN-LINE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
power supply	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum standby current	0.02 A	0.00015 A	0.00015 A	0.015 A	0.015 A	0.015 A	0.02 A	0.00015 A	0.00015 A
Minimum standby current	4.5 V	2 V	2 V	4.5 V	4.5 V	4.5 V	4.5 V	2 V	2 V
Maximum slew rate	0.12 mA	0.1 mA	0.1 mA	0.125 mA	0.125 mA	0.125 mA	0.12 mA	0.1 mA	0.1 mA
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	NO	YES	YES	NO	YES	YES	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	MILITARY	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	MILITARY	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	J BEND	NO LEAD	THROUGH-HOLE	J BEND	NO LEAD	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal pitch	2.54 mm	1.27 mm	1.27 mm	2.54 mm	1.27 mm	1.27 mm	2.54 mm	2.54 mm	2.54 mm
Terminal location	DUAL	DUAL	QUAD	DUAL	DUAL	QUAD	DUAL	DUAL	DUAL

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