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FHS4401

Description
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size106KB,2 Pages
ManufacturerFenghua (HK) Electronics Ltd.
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FHS4401 Overview

Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN

FHS4401 Parametric

Parameter NameAttribute value
MakerFenghua (HK) Electronics Ltd.
Parts packaging codeSOT-23
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.6 A
Collector-emitter maximum voltage40 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
Maximum off time (toff)255 ns
Maximum opening time (tons)35 ns

FHS4401 Preview

Switching Transistors
Switching Transistors
DESCRIPTION & FEATURES
Complementary to 4403.
概述及特點
SOT-23
FHS4401
PIN ASSIGNMENT
引腳說明
PIN NAME
FUNCTION
PIN NUMBER
引腳序號
管腳符號
功½
SOT-23
B
1
BASE
E
2
EMITTER
C
3
COLLECTOR
MAXIMUM RATINGS(T
a
=25℃)
最大額定值
CHARACTERISTIC
特性參數
Symbol
符號
Rating
額定值
Unit
單½
Collector-Emitter Voltage
V
CEO
40
Vdc
集電極-發射極電壓
Collector-Base Voltage
V
CBO
60
Vdc
集電極-基極電壓
Emitter-Base Voltage
V
EBO
6
Vdc
發射極-基極電壓
Collector Current—Continuous
I
C
600
mAdc
集電極電流-連續
THERMAL CHARACTERISTICS
熱特性
CHARACTERISTIC
特性參數
Symbol
符號
Max
最大值
Unit
單½
Total Device Dissipation
½耗散功率
225
mW
FR-5 Board(1)
(T
A
=25℃
環境溫度=25℃)
P
D
mW/℃
Derate above25℃
超過
25℃遞減
1.8
℃/W
Thermal Resistance Junction to Ambient
熱阻
R
JA
556
Total Device Dissipation Alumina Substrate,(2) T
A
=25℃
300
mW
½耗散功率 氧化鋁襯底
P
D
mW/℃
Derate above25℃
超過
25℃遞減
2.4
℃/W
Thermal Resistance Junction to Ambient
熱阻
R
JA
417
150,
T
j
,
Junction and Storage Temperature結溫和儲存溫度
T
stg
-55 to +150
DEVICE MARKING
打標
FHS4401=2X
ELECTRICAL CHARACTERISTICS
電特性
(T
A
=25℃ unless otherwise noted
如無特殊說明,溫度為
25℃)
Symbol
Test Condition
Min
Type
Max
Unit
Characteristic
特性參數
符號
測試條件
最小值 典型值 最大值
單½
Collector Cutoff Current
V
CE
=35Vdc,
I
CEX
100
nAdc
集電極截止電流
V
EB
=0.4Vdc
Base Cutoff Current
V
CE
=35Vdc,
I
BEX
100
nAdc
基極截止電流
V
EB
=0.4Vdc
Collector-Emitter Breakdown
Voltage (3)集電極-發射極擊穿電壓
Collector-Base Breakdown
Voltage
集電極-基極擊穿電壓
Emitter-Base Breakdown Voltage
發射極-基極擊穿電壓
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
Ic=1.0 mAdc, I
B
=0
Ic=100μAdc, I
E
=0
I
E
=100μAdc, I
C
=0
40
60
6
Vdc
Vdc
Vdc
1
Switching Transistors
Switching Transistors
Ic=0.1mAdc,
V
CE
=1.0Vdc
Ic=1.0mAdc,
V
CE
=1.0Vdc
Ic=10mAdc,
V
CE
=1.0Vdc
Ic=150mAdc,
V
CE
=2.0Vdc
Ic=500mAdc,
V
CE
=2.0Vdc
Ic=150mAdc,
I
B
=15mAdc
Ic=500mAdc,
I
B
=50mAdc
Ic=150mAdc,
I
B
=15mAdc
Ic=500mAdc,
I
B
=50mAdc
Ic=20mAdc,
V
CE
=10Vdc,
f=100MHz
V
CB
=5.0Vdc,I
E
=0,
f=1.0MHz
V
EB
=0.5Vdc,I
C
=0,
f=1.0MHz
V
CE
=10Vdc,
I
C
=1.0mAdc,
f=1.0KHz
V
CE
=10Vdc,
I
C
=1.0mAdc,
f=1.0KHz
V
CE
=10Vdc,
I
C
=1.0mAdc,
f=1.0KHz
V
CE
=10Vdc,
I
C
=1.0mAdc,
f=1.0KHz
20
40
80
100
40
0.75
250
1.0
FHS4401
300
0.4
Vdc
0.75
0.95
Vdc
1.2
6.5
30
15
MHz
pF
pF
×10
-4
DC Current Gain
直流電流增益
h
FE
Collector-Emitter Saturation
Voltage(3)集電極-發射極½和壓降
V
CE(sat)
Base-Emitter Saturation Voltage
基極-發射極½和壓降
V
BE(sat)
Current-Gain-Bandwidth Product
電流增益-帶寬乘積
Output Capacitance
輸出電容
Input Capacitance
輸入電容
Input Impedance
輸入阻抗
Voltage Feedback Ratio
電壓回饋係數
Small-Signal Current Gain
小信號電流增益
f
T
C
obo
C
ibo
h
ie
h
re
0.5
8.0
h
fe
h
oe
100
500
μ
mhos
Output Admittance
輸出導納
1.0
100
SWITCHING CHARACTERISTICS
開關特性
Delay Time
延遲時間
Rise Time
上升時間
Storage Time
儲存時間
Fall Time
下降時間
1.
FR-5=1.0×0.75×0.062in.
t
d
t
r
t
s
t
f
V
CC
=30Vdc,V
BE
=2.0Vdc,
I
C
=150mAdc,I
B1
=15mAdc
V
CC
=30Vdc,I
C
=150mAdc,
I
B1
=I
B2
=15mAdc
15
20
225
30
nS
nS
2. Alumina=0.4×0.3×0.024in, 99.5%alumina.
3. Pulse Width≤300µS;Duty Cycle≤2.0%.
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