2SB1017G-R-TF3-T datasheet, PDF

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2SB1017G-R-TF3-T: DescriptionPower Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, HALOGEN FREE, TO-220F, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size60KB，2 Pages; ManufacturerUNISONIC TECHNOLOGIES CO.,LTD; Websitehttp://www.unisonic.com.tw/; Environmental Compliance

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2SB1017G-R-TF3-T Overview

Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, HALOGEN FREE, TO-220F, 3 PIN

2SB1017G-R-TF3-T Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Parts packaging code	TO-220AB
package instruction	HALOGEN FREE, TO-220F, 3 PIN
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Shell connection	ISOLATED
Maximum collector current (IC)	4 A
Collector-emitter maximum voltage	80 V
Configuration	SINGLE
Minimum DC current gain (hFE)	40
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Maximum power dissipation(Abs)	25 W
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	9 MHz
Base Number Matches	1

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UNISONIC TECHNOLOGIES CO., LTD

2SB1017

Preliminary

PNP EPITAXIAL SILICON TRANSISTOR

PNP SILICON EPITAXIAL

TRANSISTOR

DESCRIPTION

The UTC

2SB1017

is a PNP silicon epitaxial transistor suited to be

used in power amplifier applications.

FEATURES

* Low base drive

ORDERING INFORMATION

Ordering Number

Lead Free

2SB1017L-x-TF3-T

Halogen Free

2SB1017G-x-TF3-T

Package

TO-220F

Pin Assignment

Packing

Tube

(1)Packing Type

(2)Package Type

(3)Rank

(4)Lead Free

(1) T: Tube

(2) TF3: TO-220F

(3) x: refer to Classification of h

(4) Halogen Free, L: Lead Free

www.unisonic.com.tw

1 of 2

QW-R219-010.a

2SB1017G-R-TF3-T Related Products

	2SB1017G-R-TF3-T	2SB1017L-Y-TF3-T	2SB1017G-O-TF3-T	2SB1017G-Y-TF3-T	2SB1017L-O-TF3-T	2SB1017L-R-TF3-T
Description	Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, HALOGEN FREE, TO-220F, 3 PIN	Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, LEAD FREE, TO-220F, 3 PIN	Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, HALOGEN FREE, TO-220F, 3 PIN	Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, HALOGEN FREE, TO-220F, 3 PIN	Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, LEAD FREE, TO-220F, 3 PIN	Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, LEAD FREE, TO-220F, 3 PIN
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to
Parts packaging code	TO-220AB	TO-220AB	TO-220AB	TO-220AB	TO-220AB	TO-220AB
package instruction	HALOGEN FREE, TO-220F, 3 PIN	LEAD FREE, TO-220F, 3 PIN	HALOGEN FREE, TO-220F, 3 PIN	HALOGEN FREE, TO-220F, 3 PIN	LEAD FREE, TO-220F, 3 PIN	LEAD FREE, TO-220F, 3 PIN
Contacts	3	3	3	3	3	3
Reach Compliance Code	compli	compli	compli	compli	compli	compli
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Maximum collector current (IC)	4 A	4 A	4 A	4 A	4 A	4 A
Collector-emitter maximum voltage	80 V	80 V	80 V	80 V	80 V	80 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	40	120	70	120	70	40
JEDEC-95 code	TO-220AB	TO-220AB	TO-220AB	TO-220AB	TO-220AB	TO-220AB
JESD-30 code	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
Number of components	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	PNP	PNP	PNP	PNP	PNP	PNP
Maximum power dissipation(Abs)	25 W	25 W	25 W	25 W	25 W	25 W
surface mount	NO	NO	NO	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	9 MHz	9 MHz	9 MHz	9 MHz	9 MHz	9 MHz
Base Number Matches	1	1	1	1	1	1

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