2SC4276 datasheet, PDF - EEWORLD Datasheet

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2SC4276: DescriptionPower Bipolar Transistor, 15A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3P, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size109KB，2 Pages; ManufacturerFuji Electric Co., Ltd.

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2SC4276 Overview

Power Bipolar Transistor, 15A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3P, 3 PIN

2SC4276 Parametric

Parameter Name	Attribute value
Parts packaging code	TO-3P
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	unknow
Other features	HIGH RELIABILITY
Maximum collector current (IC)	15 A
Collector-emitter maximum voltage	400 V
Configuration	SINGLE
Minimum DC current gain (hFE)	25
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Maximum power consumption environment	80 W
Maximum power dissipation(Abs)	80 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	3000 ns
Maximum opening time (tons)	1000 ns
Base Number Matches	1

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2SC4276

TRIPLE DIFFUSED PLANER TYPE

HIGH VOLTAGE,HIGH SPEED SWITCHING

FUJI POWER TRANSISTOR

Outline Drawings

TO-3P

Features

High voltage,High speed switching

Low saturation voltage

High reliability

Applications

Switching regulators

DC-DC convertor

Solid state relay

General purpose power amplifiers

JEDEC

EIAJ

-

SC-65

Maximum ratings and characteristics

Absolute maximum ratings (Tc=25°C unless otherwise specified)

Item

Collector-Base voltage

Collector-Emitter voltage

Emitter-Base voltage

Collector current

Base current

Collector power disspation

Operating junction temperature

Storage temperature

Symbol

V

CBO

V

CEO

V

EBO

I

C

I

B

P

C

T

j

T

stg

Ratings

500

400

10

15

5

80

+150

-55 to +150

Unit

V

A

W

°C

Electrical characteristics (T

c

=25°C unless otherwise specified)

Item

Collector-Base voltage

Collector-Emitter voltage

Emitter-Base voltage

Collector-Base leakage current

Emitter-Base leakage current

D.C. current gain

Collector-Emitter saturation voltage

Base-Emitter saturation voltage

*1

Switching time

Symbol

V

CBO

V

CEO

V

EBO

I

CBO

I

EBO

h

FE

V

CE(Sat)

V

BE(Sat)

t

on

t

stg

t

f

Test Conditions

I

CBO

= 1mA

I

CEO

= 0.2A

I

EBO

= 1mA

V

CBO

= 450V

V

EBO

= 10V

I

C

= 2A, V

CE

= 5V

I

C

= 6A, I

B

= 1200mA

I

C

= 7.5A, I

B1

= 750mA

I

B2

= -1500mA, R

L

= 20 ohm

Pw = 20µs Duty=<2%

Min.

500

400

10

Typ.

Max.

Units

V

mA

V

µs

25

0.1

65

0.8

1.2

1.0

2.5

0.5

Thermal characteristics

Item

Thermal resistance

Symbol

R

th(j-c)

Test Conditions

Junction to case

Min.

Typ.

Max.

1.56

Units

°C/W

1

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TOPSwitch--Ⅱ

Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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