IDT8M624S45CB datasheet, PDF - EEWORLD Datasheet

IDT8M624S45CB: DescriptionSRAM Module, 64KX16, 45ns, CMOS, CDMA40; Categorystorage storage; File Size218KB，8 Pages; ManufacturerIDT (Integrated Device Technology)

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IDT8M624S45CB Overview

SRAM Module, 64KX16, 45ns, CMOS, CDMA40

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	IDT (Integrated Device Technology)
Reach Compliance Code	not_compliant
ECCN code	3A001.A.2.C
Maximum access time	45 ns
Other features	TTL COMPATIBLE INPUTS/OUTPUTS
I/O type	COMMON
JESD-30 code	R-CDMA-T40
JESD-609 code	e0
memory density	1048576 bit
Memory IC Type	SRAM MODULE
memory width	16
Number of functions	1
Number of terminals	40
word count	65536 words
character code	64000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	64KX16
Output characteristics	3-STATE
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DIP
Encapsulate equivalent code	DIP40,.6
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
Filter level	MIL-STD-883 Class B (Modified)
Maximum standby current	0.08 A
Minimum standby current	4.5 V
Maximum slew rate	0.34 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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